transistors-thyristors

Si2302

Full part number: Si2302CDS

Key datasheet specifications and the closest alternatives, ranked by parametric similarity and grounded in the manufacturer datasheet.

01 — Overview

This Vishay datasheet covers the Si2302CDS, an N-channel 20-V TrenchFET Power MOSFET available in TO-236 packaging. It details specifications for part numbers including the lead-free and halogen-free variants. Key parameters include a 20 V drain-source voltage rating, 2.9 A continuous current at 25°C, 0.057 ohm on-resistance at 4.5V gate drive, and 140°C/W thermal resistance. The device is designed for load switching in portable devices and DC/DC converters.

02 — Key specifications

Datasheet parameters

ParameterMinTypMaxConditions
rds on — 45 mOhm 57 mOhm VGS = 4.5 V, ID = 3.6 A
forward voltage — 700 mV 1.2 V IS = 0.95 A, VGS = 0 V
operating temperature -55 °C — 150 °C
power dissipation — 710 mW —
reverse leakage current — — 1 µA VDS = 20 V, VGS = 0 V
breakdown voltage ds 20 V — — VGS = 0 V, ID = 250 μA
drain current 10 A — —
vgs threshold 400 mV — 850 mV VDS = VGS, ID = 250 μA
input capacitance — 325 pF —
output capacitance — 100 pF —
reverse transfer capacitance — 40 pF —
gate charge — 3.5 nC 5.5 nC VDS = 10 V, VGS = 4.5 V, ID = 3.6 A
rise time — 7 ns 15 ns VDD = 10 V, RL = 2.78 ΩID≅ 3.6 A, VGEN = 4.5 V, Rg = 1 Ω
fall time — 7 ns 15 ns VDD = 10 V, RL = 2.78 ΩID≅ 3.6 A, VGEN = 4.5 V, Rg = 1 Ω
collector emitter voltage — 20 V —
03 — Alternatives

Closest matches to Si2302

AO3400A 2.8× lower rise time, 2.5× lower rds on, 2.0× higher power dissipation
DMG2302UK 10.0× higher reverse leakage current, 4.1× lower fall time, 3.8× lower output capacitance
AO3402 15.0× higher reverse leakage current, 4.7× lower rise time, 2.9× higher gate charge
DMG1012T-13 15.9× lower drain current, 10.3× lower output capacitance, 10.0× lower reverse leakage current
AO3407A 3.6× higher gate charge, 2.3× higher reverse transfer capacitance, 2.1× higher input capacitance
DMP3099L-13 2.1× higher fall time, 2.1× lower output capacitance, 1.7× higher input capacitance
FDV303N 20.0× lower drain current, 7.3× higher rds on, 6.5× lower input capacitance
PMV65XPEA 2.7× higher rise time, 2.4× higher fall time, 1.9× higher input capacitance
04 — FAQ

Frequently asked questions

What is the breakdown voltage ds for the Si2302CDS?

The breakdown voltage ds is 20 V at VGS = 0 V, ID = 250 μA.

What is the collector-emitter voltage of the Si2302CDS?

The collector-emitter voltage is 20 V.

What is the drain current of the Si2302CDS?

The drain current is 10 A.

What is the fall time of the Si2302CDS?

The fall time is 7 ns at VDD = 10 V, RL = 2.78 ΩID≅ 3.6 A, VGEN = 4.5 V, Rg = 1 Ω.

What is the forward voltage when IS = 0.95 A and VGS = 0 V?

The forward voltage is 700 mV.

What is the gate charge of the Si2302CDS when VDS = 10 V, VGS = 4.5 V, and ID = 3.6 A?

The gate charge is 3.5 nC.

What is the input capacitance of the Si2302CDS?

The input capacitance is 325 pF.

What is the maximum operating temperature for the Si2302CDS?

The operating temperature is 150 °C.

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