Si2302
Full part number: Si2302CDS
Every spec below is cited to the manufacturer datasheet. Compare the closest alternatives, then ask the assistant what it means for your design.
What the Si2302 does
The Si2302CDS is an N-channel 20-V TrenchFET power MOSFET available in lead-free and halogen-free options. It features a 20-V drain-source breakdown voltage, 2.9 A continuous drain current, and 0.057 Ω on-resistance at 4.5 V gate drive. The device supports a junction temperature range of -55 to 150 °C with a total gate charge of 3.5 nC. Engineers typically use this component for load switching in portable devices and within DC/DC converter circuits. Its compact TO-236 package facilitates surface mounting on standard FR4 boards while maintaining efficient thermal performance.
Datasheet parameters
| Parameter | Min | Typ | Max | Conditions | Source |
|---|---|---|---|---|---|
| rds on | — | 45 mOhm | 57 mOhm | VGS = 4.5 V, ID = 3.6 A; (on); Static | Vishay datasheet, p. 2 — FEATURES |
| forward voltage | — | 700 mV | 1.2 V | IS = 0.95 A, VGS = 0 V; Static | Vishay datasheet, p. 2 — FEATURES |
| operating temperature | -55 °C | — | 150 °C | Vishay datasheet, p. 1 — FEATURES | |
| power dissipation | — | 860 mW | — | T_A = 25 °C, t ≤ 5 s | Vishay datasheet, p. 1 — FEATURES |
| breakdown voltage ds | 20 V | — | — | VGS = 0 V, ID = 250 μA; Static | Vishay datasheet, p. 2 — FEATURES |
| drain current | 6 A | — | — | VDS≥ 10 V, VGS = 4.5 V; (on); Static | Vishay datasheet, p. 2 — FEATURES |
| vgs threshold | 400 mV | — | 850 mV | VDS = VGS, ID = 250 μA; gate(th); Static | Vishay datasheet, p. 2 — FEATURES |
| input capacitance | — | 308 pF | — | V_DS = 10 V | Vishay datasheet, p. 3 |
| output capacitance | — | 55 pF | — | V_DS = 10 V | Vishay datasheet, p. 3 |
| reverse transfer capacitance | — | 30 pF | — | V_DS = 5 V | Vishay datasheet, p. 3 |
| gate charge | — | 3.5 nC | 5.5 nC | VDS = 10 V, VGS = 4.5 V, ID = 3.6 A; Dynamicb | Vishay datasheet, p. 2 — FEATURES |
| rise time | — | 7 ns | 15 ns | VDD = 10 V, RL = 2.78 ΩID≅ 3.6 A, VGEN = 4.5 V, Rg = 1 Ω; Switching | Vishay datasheet, p. 2 — FEATURES |
| fall time | — | 7 ns | 15 ns | VDD = 10 V, RL = 2.78 ΩID≅ 3.6 A, VGEN = 4.5 V, Rg = 1 Ω; Switching | Vishay datasheet, p. 2 — FEATURES |
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Frequently asked questions
What is the breakdown voltage (ds) for the Si2302CDS?
The breakdown voltage (ds) is 20 V at VGS = 0 V, ID = 250 μA; Static.
What is the static drain current of the Si2302CDS when VDS≥ 10 V and VGS = 4.5 V?
The drain current is 6 A.
What is the fall time of the Si2302CDS under switching conditions with VDD = 10 V, RL = 2.78 Ω, ID≅ 3.6 A, VGEN = 4.5 V, and Rg = 1 Ω?
The fall time is 7 ns.
What is the forward voltage when IS = 0.95 A and VGS = 0 V under static conditions?
The forward voltage is 700 mV.
What is the gate charge (Qg) of the Si2302CDS under the conditions VDS = 10 V, VGS = 4.5 V, and ID = 3.6 A?
The gate charge is 3.5 nC.
What is the input capacitance of the Si2302CDS when V_DS = 10 V?
The input capacitance is 308 pF at V_DS = 10 V.
What is the maximum operating temperature for the Si2302CDS?
The maximum operating temperature is 150 °C.
What is the output capacitance of the Si2302CDS at V_DS = 10 V?
The output capacitance is 55 pF at V_DS = 10 V.
What is the power dissipation of the Si2302CDS at T_A = 25 °C for t ≤ 5 s?
The power dissipation is 860 mW.
What is the static on-resistance (rds on) of the Si2302CDS at VGS = 4.5 V and ID = 3.6 A?
The static on-resistance is 45 mOhm.
What is the reverse transfer capacitance of the Si2302CDS at V_DS = 5 V?
The reverse transfer capacitance is 30 pF at V_DS = 5 V.
What is the rise time under the conditions VDD = 10 V, RL = 2.78 Ω, ID≅ 3.6 A, VGEN = 4.5 V, Rg = 1 Ω during switching?
The rise time is 7 ns.