transistors-thyristors

DMP3099L

Full part number: DMP3099L-13

Key datasheet specifications and the closest alternatives, ranked by parametric similarity and grounded in the manufacturer datasheet.

01 — Overview

This datasheet covers the DMP3099L-7 and DMP3099L-13, P-channel enhancement mode MOSFETs designed for high-efficiency power management. It details electrical and thermal specifications suitable for automotive applications requiring strict change control. Key parameters include a drain-source voltage of -30 V, maximum on-resistance of 69.5 mΩ at -4.5 V gate drive, and a continuous drain current of -3.8 A. The device features low input capacitance of 563 pF and operates across temperatures from -55 to +150 °C.

02 — Key specifications

Datasheet parameters

Parameter	Min	Typ	Max	Conditions
rds on	—	—	65 mOhm	VGS = -10V, ID = -3.8A
forward voltage	—	—	-1.26 V	VGS = 0V, IS = -2.7A
operating temperature	-55 °C	—	150 °C
power dissipation	—	1.08 W	—
reverse leakage current	—	—	-800 nA	VDS = -30V, VGS = 0V
breakdown voltage ds	—	—	-30 V
drain current	—	—	-11 A
vgs threshold	-2.1 V	—	-1 V
input capacitance	—	563 pF	—	VDS = -25V, VGS = 0V, f = 1.0MHz
output capacitance	—	48 pF	—	VDS = -25V, VGS = 0V, f = 1.0MHz
reverse transfer capacitance	—	41 pF	—	VDS = -25V, VGS = 0V, f = 1.0MHz
gate charge	—	5.2 nC	—	VDS = -15V, VGS = -4.5V, ID = -3.8A
rise time	—	5 ns	—	VDS = -15V, VGS = -10V, ID = -1A, RG = 6.0Ω
fall time	—	15 ns	—	VDS = -15V, VGS = -10V, ID = -1A, RG = 6.0Ω

03 — Alternatives

Closest matches to DMP3099L

PMV65XPEA 3.8× higher rise time, 3.3× lower drain current, 2.2× lower power dissipation

Si2301CDS 7.0× higher rise time, 3.5× lower drain current, 2.2× lower vgs threshold

AO3407A 2.7× higher drain current, 2.6× higher output capacitance, 2.4× higher gate charge

AO3401A 2.8× lower drain current, 2.7× higher gate charge, 1.7× lower fall time

AO3400A 3.8× lower fall time, 3.6× lower rds on, 2.0× lower rise time

Si2302CDS 2.1× lower fall time, 2.1× higher output capacitance, 1.7× lower input capacitance

DMG2302UK 8.8× lower fall time, 4.3× lower input capacitance, 3.7× lower gate charge

AOD409 8.5× higher gate charge, 5.5× higher drain current, 5.3× higher input capacitance

04 — FAQ

Frequently asked questions

What is the breakdown voltage (ds) of the DMP3099L-13?

The breakdown voltage (ds) is -30 V.

What is the drain current of the DMP3099L-13?

The drain current is -11 A.

What is the fall time of the DMP3099L-13?

The fall time is 15 ns at VDS = -15V, VGS = -10V, ID = -1A, and RG = 6.0Ω.

What is the forward voltage of the DMP3099L-13 when VGS = 0V and IS = -2.7A?

The forward voltage is -1.26 V.

What is the gate charge of the DMP3099L-13?

The gate charge is 5.2 nC at VDS = -15V, VGS = -4.5V, and ID = -3.8A.

What is the input capacitance of the DMP3099L-13?

The input capacitance is 563 pF at VDS = -25V, VGS = 0V, and f = 1.0MHz.

What is the maximum operating temperature for the DMP3099L-13?

The maximum operating temperature is 150 °C.

What is the output capacitance of the DMP3099L-13?

The output capacitance is 48 pF at VDS = -25V, VGS = 0V, and f = 1.0MHz.

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