DMP3099L
Every spec below is cited to the manufacturer datasheet. Compare the closest alternatives, then ask the assistant what it means for your design.
What the DMP3099L does
The DMP3099L is a P-channel enhancement mode MOSFET designed for high-efficiency power management. It features a low gate threshold voltage, low on-state resistance of 69.5 mΩ, and a drain-source breakdown voltage of -30 V. The device supports a continuous drain current of -3.8 A and offers fast switching speeds with a total gate charge of 11.79 nC. Ideal for applications like backlighting, DC-DC converters, and general power management functions, this component operates across a temperature range of -55 to +150 °C. It is available in a standard SOT23 package and is fully RoHS compliant with lead-free construction.
Datasheet parameters
| Parameter | Min | Typ | Max | Conditions | Source |
|---|---|---|---|---|---|
| rds on | — | — | 65 mOhm | VGS = -10V, ID = -3.8A; (on); ON CHARACTERISTICS (Note 7) | Diodes datasheet, p. 3 — Thermal Characteristics |
| forward voltage | — | — | -1.26 V | VGS = 0V, IS = -2.7A; (note 6); ON CHARACTERISTICS (Note 7) | Diodes datasheet, p. 3 — Thermal Characteristics |
| operating temperature | -55 °C | — | 150 °C | Diodes datasheet, p. 2 — Thermal Characteristics | |
| power dissipation | — | 1.08 W | — | Diodes datasheet, p. 2 — Thermal Characteristics | |
| breakdown voltage ds | — | — | -30 V | Marking Information | Diodes datasheet, p. 2 — Marking Information |
| drain current | — | — | -11 A | pulsed(note 6); Marking Information | Diodes datasheet, p. 2 — Marking Information |
| vgs threshold | -2.1 V | — | -1 V | Diodes datasheet, p. 3 — Thermal Characteristics | |
| input capacitance | — | 563 pF | — | VDS = -25V, VGS = 0V, f = 1.0MHz; DYNAMIC CHARACTERISTICS (Note 8) | Diodes datasheet, p. 3 — Thermal Characteristics |
| output capacitance | — | 48 pF | — | VDS = -25V, VGS = 0V, f = 1.0MHz; DYNAMIC CHARACTERISTICS (Note 8) | Diodes datasheet, p. 3 — Thermal Characteristics |
| reverse transfer capacitance | — | 41 pF | — | VDS = -25V, VGS = 0V, f = 1.0MHz; DYNAMIC CHARACTERISTICS (Note 8) | Diodes datasheet, p. 3 — Thermal Characteristics |
| gate charge | — | 5.2 nC | — | VDS = -15V, VGS = -4.5V, ID = -3.8A; SWITCHING CHARACTERISTICS (Note 8) | Diodes datasheet, p. 3 — Thermal Characteristics |
| rise time | — | 5 ns | — | VDS = -15V, VGS = -10V, ID = -1A, RG = 6.0Ω; SWITCHING CHARACTERISTICS (Note 8) | Diodes datasheet, p. 3 — Thermal Characteristics |
| fall time | — | 15 ns | — | VDS = -15V, VGS = -10V, ID = -1A, RG = 6.0Ω; SWITCHING CHARACTERISTICS (Note 8) | Diodes datasheet, p. 3 — Thermal Characteristics |
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Frequently asked questions
What is the breakdown voltage ds for the DMP3099L according to the Marking Information?
The breakdown voltage ds is -30 V.
What is the pulsed drain current for the DMP3099L according to note 6?
The pulsed drain current is -11 A.
What is the fall time of the DMP3099L under the conditions VDS = -15V, VGS = -10V, ID = -1A, and RG = 6.0Ω?
The fall time is 15 ns.
What is the forward voltage when VGS = 0V, IS = -2.7A; (note 6); ON CHARACTERISTICS (Note 7)?
The forward voltage is -1.26 V.
What is the gate charge of the DMP3099L under the specified switching conditions?
The gate charge is 5.2 nC when VDS = -15V, VGS = -4.5V, and ID = -3.8A.
What is the input capacitance of the DMP3099L under dynamic characteristics conditions?
The input capacitance is 563 pF when VDS = -25V, VGS = 0V, and f = 1.0MHz.
What is the maximum operating temperature for the DMP3099L?
The maximum operating temperature is 150 °C.
What is the output capacitance of the DMP3099L under dynamic characteristics conditions?
The output capacitance is 48 pF when VDS = -25V, VGS = 0V, and f = 1.0MHz.
What is the power dissipation of the DMP3099L?
The power dissipation is 1.08 W.
What is the maximum on-resistance (rds on) for the DMP3099L?
The on-resistance is 65 mOhm at VGS = -10V and ID = -3.8A.
What is the reverse transfer capacitance of the DMP3099L?
The reverse transfer capacitance is 41 pF at VDS = -25V, VGS = 0V, f = 1.0MHz under DYNAMIC CHARACTERISTICS (Note 8).
What is the rise time of the DMP3099L under the condition VDS = -15V, VGS = -10V, ID = -1A, RG = 6.0Ω; SWITCHING CHARACTERISTICS (Note 8)?
The rise time is 5 ns.