transistors-thyristors

DMG2302

Full part number: DMG2302UK

Key datasheet specifications and the closest alternatives, ranked by parametric similarity and grounded in the manufacturer datasheet.

01 — Overview

This datasheet covers the DMG2302UK, an N-channel enhancement mode MOSFET from Diodes Incorporated. It is designed for high-efficiency power management, including DC-DC converters and motor control. Key parameters include a 20V drain-source breakdown voltage, maximum continuous drain current of 2.8A, and low on-resistance ranging from 68 to 192 mΩ depending on gate voltage. The device features fast switching speeds with input capacitance under 130 pF and is fully RoHS compliant in a compact SOT23 package.

02 — Key specifications

Datasheet parameters

ParameterMinTypMaxConditions
rds on — 61 mOhm 90 mOhm VGS = 4.5V, ID = 3.6A
forward voltage — 700 mV 1.2 V VGS = 0V, IS = 1.0A
operating temperature -55 °C — 150 °C
power dissipation — — 660 mW W
forward current — — 1.1 A
reverse leakage current — — 10 µA VDS = 16V, VGS = 0V
breakdown voltage ds — — 20 V
drain current — — 12 A
vgs threshold 300 mV 600 mV 1 V VDS = VGS, ID = 250μA
input capacitance — 130 pF — VDS = 10V, VGS = 0Vf = 1.0MHz
output capacitance — 26 pF — VDS = 10V, VGS = 0Vf = 1.0MHz
reverse transfer capacitance — 18 pF — VDS = 10V, VGS = 0Vf = 1.0MHz
gate charge — 1.4 nC — VDS = 10V, ID = 3.6A
rise time — 2.7 ns — VDS = 10V, VGS = 4.5V, RG = 1Ω, RL = 2.78Ω
fall time — 1.7 ns — VDS = 10V, VGS = 4.5V, RG = 1Ω, RL = 2.78Ω
reverse recovery time — 5.3 ns — IF = 3.6A, di/dt = 100A/μs
collector emitter voltage — 20 V —
03 — Alternatives

Closest matches to DMG2302

AO3402 7.1× higher gate charge, 3.0× lower drain current, 2.1× higher power dissipation
Si2302CDS 10.0× lower reverse leakage current, 4.1× higher fall time, 3.8× higher output capacitance
FDV303N 11.2× higher fall time, 10.0× lower reverse leakage current, 5.4× higher rds on
AO3400A 10.0× lower reverse leakage current, 4.8× higher input capacitance, 4.3× higher gate charge
DMG1012T-13 19.0× lower drain current, 7.2× higher fall time, 4.9× higher rds on
DMP3099L-13 8.8× higher fall time, 4.3× higher input capacitance, 3.7× higher gate charge
RUM001L02T2CL 18.3× lower input capacitance, 11.0× lower forward current, 10.6× lower reverse transfer capacitance
RUM002N02T2L 13.1× higher rds on, 11.0× lower forward current, 10.0× lower reverse leakage current
04 — FAQ

Frequently asked questions

What is the breakdown voltage ds?

The breakdown voltage ds is 20 V.

What is the collector-emitter voltage?

The collector-emitter voltage is 20 V.

What is the drain current of the DMG2302UK?

The drain current is 12 A.

What is the fall time of the DMG2302UK when VDS = 10V, VGS = 4.5V, RG = 1Ω, and RL = 2.78Ω?

The fall time is 1.7 ns.

What is the forward current of the DMG2302UK?

The forward current is 1.1 A.

What is the forward voltage of the DMG2302UK when VGS = 0V and IS = 1.0A?

The forward voltage is 700 mV at VGS = 0V and IS = 1.0A.

What is the gate charge of the DMG2302UK when VDS = 10V and ID = 3.6A?

The gate charge is 1.4 nC.

What is the input capacitance of the DMG2302UK?

The input capacitance is 130 pF at VDS = 10V, VGS = 0V, and f = 1.0MHz.

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