transistors thyristors

DMG2302

Full part number: DMG2302UK

Every spec below is cited to the manufacturer datasheet. Compare the closest alternatives, then ask the assistant what it means for your design.

00 — Overview

What the DMG2302 does

The DMG2302UK is an N-channel enhancement mode MOSFET available in SOT23 packages. It features a 20 V drain-source breakdown voltage, 2.8 A continuous drain current, and 120 mΩ on-resistance at 2.5 V gate drive. The device supports 12 A pulsed current and operates from -55 to +150 °C. Engineers typically use this component for high efficiency power management, DC-DC converters, and motor control applications requiring fast switching speed and low input capacitance.

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Start building with DMG2302 → Every number above is cited straight from the datasheet — ask what they mean for your design, and the assistant answers from the same source documents.
01 — Key specifications

Datasheet parameters

Datasheet parameters for DMG2302
ParameterMinTypMaxConditionsSource
rds on 61 mOhm 90 mOhm VGS = 4.5V, ID = 3.6A; (on); ON CHARACTERISTICS (Note 7) Diodes datasheet, p. 2 — Marking Information
forward voltage 700 mV 1.2 V VGS = 0V, IS = 1.0A; ON CHARACTERISTICS (Note 7) Diodes datasheet, p. 2 — Marking Information
operating temperature -55 °C 150 °C Diodes datasheet, p. 2 — Thermal Characteristics
power dissipation 660 mW (note 5); Thermal Characteristics Diodes datasheet, p. 2 — Thermal Characteristics
reverse leakage current 10 µA VDS = 16V, VGS = 0V; zero; OFF CHARACTERISTICS (Note 7) Diodes datasheet, p. 2 — Marking Information
breakdown voltage ds 20 V Marking Information Diodes datasheet, p. 2 — Marking Information
drain current 12 A pulsed; Marking Information Diodes datasheet, p. 2 — Marking Information
vgs threshold 300 mV 600 mV 1 V VDS = VGS, ID = 250μA; gate(th); ON CHARACTERISTICS (Note 7) Diodes datasheet, p. 2 — Marking Information
input capacitance 130 pF VDS = 10V, VGS = 0Vf = 1.0MHz; DYNAMIC CHARACTERISTICS (Note 8) Diodes datasheet, p. 2 — Marking Information
output capacitance 26 pF VDS = 10V, VGS = 0Vf = 1.0MHz; DYNAMIC CHARACTERISTICS (Note 8) Diodes datasheet, p. 2 — Marking Information
reverse transfer capacitance 18 pF VDS = 10V, VGS = 0Vf = 1.0MHz; DYNAMIC CHARACTERISTICS (Note 8) Diodes datasheet, p. 2 — Marking Information
gate charge 2.8 nC VDS = 10V, ID = 3.6A; DYNAMIC CHARACTERISTICS (Note 8) Diodes datasheet, p. 2 — Marking Information
rise time 2.7 ns VDS = 10V, VGS = 4.5V, RG = 1Ω, RL = 2.78Ω; turn; DYNAMIC CHARACTERISTICS (Note 8) Diodes datasheet, p. 2 — Marking Information
fall time 1.7 ns VDS = 10V, VGS = 4.5V, RG = 1Ω, RL = 2.78Ω; turn; DYNAMIC CHARACTERISTICS (Note 8) Diodes datasheet, p. 2 — Marking Information
reverse recovery time 5.3 ns IF = 3.6A, di/dt = 100A/μs; DYNAMIC CHARACTERISTICS (Note 8) Diodes datasheet, p. 2 — Marking Information
02 — Alternatives

Closest matches to DMG2302

AO3402 7.1× higher gate charge, 3.0× lower drain current, 2.1× higher power dissipation
HL2302 12.9× higher fall time, 10.7× higher rise time, 10.0× lower reverse leakage current
HL2310A 10.0× lower reverse leakage current, 6.2× higher reverse recovery time, 5.9× higher fall time
Si2302CDS 10.0× lower reverse leakage current, 4.1× higher fall time, 2.6× higher rise time
HL2307 2.9× higher gate charge, 2.4× higher fall time, 1.7× higher output capacitance
AO3400A 10.0× lower reverse leakage current, 4.8× higher input capacitance, 4.3× higher gate charge
HJ8205 10.0× lower reverse leakage current, 7.7× higher reverse transfer capacitance, 6.3× higher output capacitance
MDD2302 13.3× higher rise time, 10.0× lower reverse leakage current, 5.9× higher fall time
03 — FAQ

Frequently asked questions

What is the breakdown voltage ds for the DMG2302UK?

The breakdown voltage ds is 20 V under the condition of Marking Information.

What is the pulsed drain current for the DMG2302UK as indicated in the Marking Information?

The pulsed drain current is 12 A.

What is the fall time of the DMG2302UK under the condition VDS = 10V, VGS = 4.5V, RG = 1Ω, RL = 2.78Ω; turn; DYNAMIC CHARACTERISTICS (Note 8)?

The fall time is 1.7 ns.

What is the forward voltage of the DMG2302UK under the condition VGS = 0V, IS = 1.0A?

The forward voltage is 700 mV.

What is the gate charge of the DMG2302UK under dynamic characteristics conditions where VDS = 10V and ID = 3.6A?

The gate charge is 2.8 nC.

What is the input capacitance of the DMG2302UK under the condition VDS = 10V, VGS = 0Vf = 1.0MHz; DYNAMIC CHARACTERISTICS (Note 8)?

The input capacitance is 130 pF.

What is the maximum operating temperature for the DMG2302UK?

The maximum operating temperature is 150 °C.

What is the output capacitance of the DMG2302UK when VDS = 10V, VGS = 0V, and f = 1.0MHz?

The output capacitance is 26 pF.

What is the power dissipation of the DMG2302UK?

The power dissipation is 660 mW (note 5); Thermal Characteristics.

What is the maximum on-resistance (rds on) for the DMG2302UK at VGS = 4.5V and ID = 3.6A?

The on-resistance is 61 mOhm under the specified conditions.

What is the reverse leakage current when VDS = 16V and VGS = 0V?

The reverse leakage current is 10 µA.

What is the reverse recovery time under the condition IF = 3.6A, di/dt = 100A/μs; DYNAMIC CHARACTERISTICS (Note 8)?

The reverse recovery time is 5.3 ns.

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