transistors-thyristors

AO3402

Key datasheet specifications and the closest alternatives, ranked by parametric similarity and grounded in the manufacturer datasheet.

01 — Overview

This datasheet covers the AO3402, a 30V N-Channel MOSFET using advanced trench technology. It is designed for load switching and PWM applications, operating at gate voltages as low as 2.5V. Key parameters include a drain current of 4A, an on-resistance below 52mW at 10V, and a total gate charge of 12nC. The document details absolute maximum ratings, electrical characteristics like breakdown voltage and capacitance, and provides typical thermal performance graphs.

02 — Key specifications

Datasheet parameters

ParameterMinTypMaxConditions
rds on 4.37 Ohm 5.28 Ohm VGS = 10V, ID = 4ATJ = 125°C
forward voltage 750 mV 1 V IS = 1A, VGS = 0V
operating temperature -55 °C 150 °C
power dissipation 1.4 W TA = 25°C
reverse leakage current 15 µA VDS = 30V, VGS = 0VTJ = 55°C
breakdown voltage ds 30 V ID = 250µA, VGS = 0V
drain current 4 A TA = 25°C
vgs threshold 500 mV 1 V 1.5 V VDS = VGSID = 250µA
input capacitance 185 pF 235 pF 285 pF VGS = 0V, VDS = 15V, f = 1MHz
output capacitance 25 pF 35 pF 45 pF VGS = 0V, VDS = 15V, f = 1MHz
reverse transfer capacitance 10 pF 18 pF 25 pF VGS = 0V, VDS = 15V, f = 1MHz
gate charge 10 nC 12 nC VGS = 10V, VDS = 15V, ID = 4A
rise time 1.5 ns VGS = 10V, VDS = 15V, RL = 3.75Ω, RGEN = 3Ω
fall time 2.5 ns VGS = 10V, VDS = 15V, RL = 3.75Ω, RGEN = 3Ω
reverse recovery time 8.5 ns 11 ns IF = 4A, dl/dt = 100A/µs
collector emitter voltage 30 V
03 — Alternatives

Closest matches to AO3402

DMG2302UK 7.1× lower gate charge, 3.0× higher drain current, 2.1× lower power dissipation
AO3400A 15.0× lower reverse leakage current, 2.8× higher reverse transfer capacitance, 2.7× higher input capacitance
Si2302CDS 15.0× lower reverse leakage current, 4.7× higher rise time, 2.9× higher output capacitance
2N7002 13.3× lower drain current, 7.6× lower input capacitance, 5.9× lower gate charge
FDV303N 15.0× lower reverse leakage current, 13.2× lower rds on, 8.8× higher rise time
BSS138L 6.2× lower power dissipation, 5.9× lower input capacitance, 4.2× lower reverse transfer capacitance
2N7002K 15.0× lower reverse leakage current, 10.5× lower drain current, 8.3× lower output capacitance
DMG1012T-13 14.6× lower rds on, 13.6× lower gate charge, 6.3× lower drain current
04 — FAQ

Frequently asked questions

What is the breakdown voltage (ds) of the AO3402?

The breakdown voltage (ds) is 30 V when ID = 250µA and VGS = 0V.

What is the collector-emitter voltage?

The collector-emitter voltage is 30 V.

What is the drain current of the AO3402 at TA = 25°C?

The drain current is 4 A at TA = 25°C.

What is the fall time of the AO3402 when VGS = 10V, VDS = 15V, RL = 3.75Ω, and RGEN = 3Ω?

The fall time is 2.5 ns.

What is the forward voltage when IS = 1A and VGS = 0V?

The forward voltage is 750 mV.

What is the gate charge of the AO3402 when VGS = 10V, VDS = 15V, and ID = 4A?

The gate charge is 10 nC.

What is the input capacitance of the AO3402?

The input capacitance is 235 pF at VGS = 0V, VDS = 15V, and f = 1MHz.

What is the maximum operating temperature for the AO3402?

The maximum operating temperature is 150 °C.

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