Build with AO3407A — Datasheet Specs & AI Design Help

00 — Overview

What the AO3407A does

The AO3407A/L is a P-Channel Enhancement Mode Field Effect Transistor utilizing advanced trench technology. This device spans the AO3407A and AO3407AL variants, which are electrically identical and available in TO-236 packages. It features a -30V drain-source voltage rating, -4.3A continuous drain current, and a static on-resistance below 48mΩ at -10V gate drive. The component supports a junction temperature range from -55°C to 150°C. Engineers typically use this MOSFET as a load switch or within PWM applications requiring low gate charge and efficient thermal performance.

Next step

Start building with AO3407A → Every number above is cited straight from the datasheet — ask what they mean for your design, and the assistant answers from the same source documents.

01 — Key specifications

Datasheet parameters

Datasheet parameters for AO3407A
Parameter	Min	Typ	Max	Conditions	Source
rds on	—	39 mOhm	48 mOhm	VGS = -10V, ID = -4.3A; rds(on); STATIC PARAMETERS	Alpha & Omega Semiconductor datasheet, p. 2 — P-Channel Enhancement Mode Field Effect Transistor
operating temperature	-55 °C	—	150 °C		Alpha & Omega Semiconductor datasheet, p. 1 — P-Channel Enhancement Mode Field Effect Transistor
power dissipation	—	1.4 W	—	T_A = 25°C	Alpha & Omega Semiconductor datasheet, p. 1 — P-Channel Enhancement Mode Field Effect Transistor
reverse leakage current	—	—	-1 µA	VDS = -30V, VGS = 0V; idss; STATIC PARAMETERS	Alpha & Omega Semiconductor datasheet, p. 2 — P-Channel Enhancement Mode Field Effect Transistor
breakdown voltage ds	-30 V	—	—	ID = -250µA, VGS = 0V; STATIC PARAMETERS	Alpha & Omega Semiconductor datasheet, p. 2 — P-Channel Enhancement Mode Field Effect Transistor
vgs threshold	—	-2 V	—	VDS = VGS, ID = -250µA	Alpha & Omega Semiconductor datasheet, p. 2 — P-Channel Enhancement Mode Field Effect Transistor
input capacitance	—	668 pF	830 pF	VGS = 0V, VDS = -15V, f = 1MHz; ciss; DYNAMIC PARAMETERS	Alpha & Omega Semiconductor datasheet, p. 2 — P-Channel Enhancement Mode Field Effect Transistor
output capacitance	—	126 pF	—	VGS = 0V, VDS = -15V, f = 1MHz; coss; DYNAMIC PARAMETERS	Alpha & Omega Semiconductor datasheet, p. 2 — P-Channel Enhancement Mode Field Effect Transistor
reverse transfer capacitance	—	92 pF	—	VGS = 0V, VDS = -15V, f = 1MHz; crss; DYNAMIC PARAMETERS	Alpha & Omega Semiconductor datasheet, p. 2 — P-Channel Enhancement Mode Field Effect Transistor
gate charge	—	12.7 nC	16 nC	VGS = -10V, VDS = -15V, ID = -4.3A; qg(10v); SWITCHING PARAMETERS	Alpha & Omega Semiconductor datasheet, p. 2 — P-Channel Enhancement Mode Field Effect Transistor
rise time	—	6.8 ns	—	VGS = -10V, VDS = -15V, RL = 3.5Ω, RGEN = 3Ω; tr; SWITCHING PARAMETERS	Alpha & Omega Semiconductor datasheet, p. 2 — P-Channel Enhancement Mode Field Effect Transistor
fall time	—	10 ns	—	VGS = -10V, VDS = -15V, RL = 3.5Ω, RGEN = 3Ω; tf; SWITCHING PARAMETERS	Alpha & Omega Semiconductor datasheet, p. 2 — P-Channel Enhancement Mode Field Effect Transistor
reverse recovery time	—	22 ns	30 ns	IF = -4.3A, dl/dt = 100A/µs; trr; SWITCHING PARAMETERS	Alpha & Omega Semiconductor datasheet, p. 2 — P-Channel Enhancement Mode Field Effect Transistor

02 — Alternatives

Closest matches to AO3407A

HL3415A 3.2× lower vgs threshold, 3.0× higher fall time, 1.8× higher input capacitance

HL6042 3.3× lower vgs threshold, 2.9× higher fall time, 1.5× lower breakdown voltage ds

MDD3401 7.1× lower drain current, 2.5× lower vgs threshold, 1.9× lower output capacitance

AO3401A 7.5× lower drain current, 2.2× lower vgs threshold, 2.0× lower reverse recovery time

AOD409 4.5× higher input capacitance, 3.5× higher gate charge, 2.1× higher rise time

HL2301A 5.1× higher rise time, 3.0× lower drain current, 2.9× lower vgs threshold

Si2301CDS 9.7× lower drain current, 5.1× higher rise time, 2.9× lower vgs threshold

DMP3099L 2.7× lower drain current, 2.6× lower output capacitance, 2.4× lower gate charge

03 — FAQ

Frequently asked questions

What is the breakdown voltage ds for the AO3407A?

The breakdown voltage ds is -30 V when ID = -250µA and VGS = 0V under STATIC PARAMETERS.

What is the fall time (tf) of the AO3407A under the conditions VGS = -10V, VDS = -15V, RL = 3.5Ω, and RGEN = 3Ω?

The fall time is 10 ns.

What is the gate charge (Qg) of the AO3407A under the conditions VGS = -10V, VDS = -15V, and ID = -4.3A?

The gate charge is 12.7 nC.

What is the input capacitance (Ciss) of the AO3407A?

The input capacitance is 668 pF when measured at VGS = 0V, VDS = -15V, and f = 1MHz.

What is the maximum operating temperature for the AO3407A?

The maximum operating temperature is 150 °C.

What is the output capacitance (Coss) of the AO3407A?

The output capacitance is 126 pF when measured at VGS = 0V, VDS = -15V, and f = 1MHz.

What is the power dissipation of the AO3407A at T_A = 25°C?

The power dissipation is 1.4 W at T_A = 25°C.

What is the maximum on-resistance (rds(on)) for the AO3407A at VGS = -10V and ID = -4.3A?

The on-resistance is 39 mOhm.

What is the reverse leakage current (IDSS) of the AO3407A?

The reverse leakage current is -1 µA at VDS = -30V and VGS = 0V.

What is the reverse recovery time (trr) when IF = -4.3A and dl/dt = 100A/µs?

The reverse recovery time is 22 ns.

What is the reverse transfer capacitance (crss) of the AO3407A?

The reverse transfer capacitance is 92 pF when VGS = 0V, VDS = -15V, and f = 1MHz.

What is the rise time (tr) of the AO3407A under the conditions VGS = -10V, VDS = -15V, RL = 3.5Ω, and RGEN = 3Ω?

The rise time is 6.8 ns.