AO3407A — Datasheet Summary, Specs & Alternatives

01 — Overview

This datasheet covers the AO3407A and AO3407AL, P-Channel Enhancement Mode MOSFETs from Alpha & Omega Semiconductor. It provides electrical specifications for use as load switches or in PWM applications. Key parameters include a -30V drain-source voltage rating, -4.3A continuous current, 48mΩ on-resistance at -10V gate drive, and low gate charge of 16nC. The device features RoHS compliance and comes in a TO-236 (SOT-23) package.

02 — Key specifications

Datasheet parameters

Parameter	Min	Typ	Max	Conditions
rds on	—	39 mOhm	48 mOhm	VGS = -10V, ID = -4.3A
operating temperature	-55 °C	—	150 °C
power dissipation	—	1.2 W	—	T_A = 25°C
reverse leakage current	—	—	-1 µA	VDS = -30V, VGS = 0V
breakdown voltage ds	-30 V	—	—	ID = -250µA, VGS = 0V
drain current	-30 A	—	—	VGS = -10V, VDS = -5V
vgs threshold	-2.5 V	—	-1.5 V
input capacitance	—	668 pF	830 pF	VGS = 0V, VDS = -15V, f = 1MHz
output capacitance	—	126 pF	—	VGS = 0V, VDS = -15V, f = 1MHz
reverse transfer capacitance	—	92 pF	—	VGS = 0V, VDS = -15V, f = 1MHz
gate charge	—	12.7 nC	16 nC	VGS = -10V, VDS = -15V, ID = -4.3A
rise time	—	6.8 ns	—	VGS = -10V, VDS = -15V, RL = 3.5Ω, RGEN = 3Ω
fall time	—	10 ns	—	VGS = -10V, VDS = -15V, RL = 3.5Ω, RGEN = 3Ω
reverse recovery time	—	22 ns	30 ns	IF = -4.3A, dl/dt = 100A/µs
collector emitter voltage	—	30 V	—
emitter base voltage	—	20 V	—

03 — Alternatives

Closest matches to AO3407A

AO3401A 7.5× lower drain current, 2.0× lower reverse recovery time, 1.9× lower rise time

PMV65XPEA 9.1× lower drain current, 2.8× higher rise time, 2.5× lower gate charge

AOD409 4.5× higher input capacitance, 3.5× higher gate charge, 2.1× higher rise time

Si2301CDS 9.7× lower drain current, 5.1× higher rise time, 2.9× lower vgs threshold

DMP3099L-13 2.7× lower drain current, 2.6× lower output capacitance, 2.4× lower gate charge

BUK7230-55A 10.0× higher rise time, 4.3× higher fall time, 1.9× higher gate charge

Si2302CDS 3.6× lower gate charge, 2.3× lower reverse transfer capacitance, 2.1× lower input capacitance

AO3400A 2.7× lower rise time, 2.6× lower reverse recovery time, 2.5× lower fall time

04 — FAQ

Frequently asked questions

What is the breakdown voltage ds of the AO3407A?

The breakdown voltage ds is -30 V when ID = -250µA and VGS = 0V.

What is the collector-emitter voltage?

The collector-emitter voltage is 30 V.

What is the drain current when VGS = -10V and VDS = -5V?

The drain current is -30 A.

What is the maximum emitter-base voltage?

The emitter base voltage is 20 V.

What is the fall time of the AO3407A when VGS = -10V, VDS = -15V, RL = 3.5Ω, and RGEN = 3Ω?

The fall time is 10 ns.

What is the gate charge of the AO3407A at VGS = -10V, VDS = -15V, and ID = -4.3A?

The gate charge is 12.7 nC.

What is the input capacitance of the AO3407A?

The input capacitance is 668 pF at VGS = 0V, VDS = -15V, and f = 1MHz.

What is the maximum operating temperature for the AO3407A?

The maximum operating temperature is 150 °C.