FDV303N — Datasheet Summary, Specs & Alternatives

01 — Overview

This onsemi datasheet covers the FDV303N, an N-Channel Digital FET in a SOT-23 package. It is designed for battery circuits and high-efficiency DC/DC conversion in portable devices like phones and pagers. Key parameters include 25 V drain-source voltage, 0.68 A continuous current, and low on-resistance of 0.45 ohms at 4.5 V gate drive. The device supports very low gate voltages as low as 2.7 V and features excellent ESD ruggedness exceeding 6 kV.

02 — Key specifications

Datasheet parameters

Parameter	Min	Typ	Max	Conditions
output current	682 mA	—	—
supply voltage range	25 V	—	—
rds on	—	330 mOhm	—
forward voltage	830 mV	1.2 V	—	VGS = 0 V, IS = 0.5 A (Note 1)
operating temperature	-55 °C	—	150 °C
power dissipation	350 mW	—	—
reverse leakage current	—	—	1 µA	VDS = 20 V, VGS = 0 V
breakdown voltage ds	25 V	—	—	VGS = 0 V, ID = 250 μA
drain current	500 mA	—	—	V_{GS} = 2.7 V, V_{DS} = 5 V
vgs threshold	650 mV	800 mV	1 V	V_{DS} = V_{GS}, I_D = 250 \mu A
input capacitance	—	50 pF	—
output capacitance	28 pF	—	—	VDS = 10 V, VGS = 0 V, f = 1.0 MHz
reverse transfer capacitance	9 pF	—	—	VDS = 10 V, VGS = 0 V, f = 1.0 MHz
rise time	8.5 ns	—	18 ns	VDD = 6 V, ID = 0.5 A, VGS = 4.5 V, RGEN = 50 Ω
fall time	13 ns	—	25 ns	VDD = 6 V, ID = 0.5 A, VGS = 4.5 V, RGEN = 50 Ω
collector emitter voltage	—	25 V	—
emitter base voltage	—	8 V	—

03 — Alternatives

Closest matches to FDV303N

DMG1012T-13 10.0× lower reverse leakage current, 2.9× lower output capacitance, 1.8× lower rise time

RUM002N02T2L 2.8× lower output capacitance, 2.5× lower drain current, 2.4× higher rds on

2N7002K 6.7× lower output capacitance, 3.9× lower rise time, 3.6× higher rds on

DMG2302UK 11.2× lower fall time, 10.0× higher reverse leakage current, 5.4× lower rds on

BSS138-7-F 4.2× higher rds on, 3.0× higher breakdown voltage ds, 2.5× lower drain current

AO3402 15.0× higher reverse leakage current, 13.2× higher rds on, 8.8× lower rise time

FDV301N 9.4× higher rds on, 6.9× lower reverse transfer capacitance, 5.3× lower input capacitance

Si2302CDS 20.0× higher drain current, 7.3× lower rds on, 6.5× higher input capacitance

04 — FAQ

Frequently asked questions

What is the breakdown voltage ds for the FDV303N?

The breakdown voltage ds is 25 V at VGS = 0 V and ID = 250 μA.

What is the collector-emitter voltage of the FDV303N?

The collector-emitter voltage is 25 V.

What is the drain current of the FDV303N when V_{GS} = 2.7 V and V_{DS} = 5 V?

The drain current is 500 mA.

What is the maximum emitter-base voltage?

The emitter-base voltage is 8 V.

What is the fall time of the FDV303N?

The fall time is 25 ns at VDD = 6 V, ID = 0.5 A, VGS = 4.5 V, and RGEN = 50 Ω.

What is the forward voltage of the FDV303N?

The forward voltage is 1.2 V at VGS = 0 V and IS = 0.5 A (Note 1).

What is the input capacitance of the FDV303N?

The input capacitance is 50 pF.

What is the maximum operating temperature for the FDV303N?

The maximum operating temperature is 150 °C.