FDV303N
Every spec below is cited to the manufacturer datasheet. Compare the closest alternatives, then ask the assistant what it means for your design.
What the FDV303N does
The FDV303N is an N-Channel enhancement mode MOSFET in the SOT-23 package, designed for battery circuits and portable DC/DC conversion. It handles 25 V drain-source voltage, 0.68 A continuous current, and 2 A peak current with 0.45 Ω on-resistance at 4.5 V gate drive. The device features a threshold voltage below 1 V for direct 3 V operation and includes a gate-source zener for ESD protection. Its low on-state resistance minimizes losses in compact electronic devices like cellular phones and pagers, while the Pb-free package supports RoHS compliance across commercial, industrial, and military temperature ranges.
Datasheet parameters
| Parameter | Min | Typ | Max | Conditions | Source |
|---|---|---|---|---|---|
| output current | — | — | 682 mA | id; FDV303N | onsemi datasheet, p. 2 — FDV303N |
| supply voltage range | — | — | 25 V | vdss; FDV303N | onsemi datasheet, p. 2 — FDV303N |
| rds on | — | 330 mOhm | — | V_GS = 4.5 V, I_D = 0.5 A | onsemi datasheet, p. 3 — ON CHARACTERISTICS (Note 1) |
| operating temperature | -55 °C | — | 150 °C | onsemi datasheet, p. 2 — FDV303N | |
| power dissipation | — | — | 350 mW | pd; FDV303N | onsemi datasheet, p. 2 — FDV303N |
| breakdown voltage ds | 25 V | — | — | VGS = 0 V, ID = 250 μA; OFF CHARACTERISTICS | onsemi datasheet, p. 3 — FDV303N |
| drain current | 500 mA | — | — | VGS = 2.7 V, VDS = 5 V; i(on); ON CHARACTERISTICS (Note 1) | onsemi datasheet, p. 3 — ON CHARACTERISTICS (Note 1) |
| vgs threshold | 650 mV | 800 mV | 1 V | VDS = VGS, I_D = 250 \mu A; v(th); ON CHARACTERISTICS (Note 1) | onsemi datasheet, p. 3 — ON CHARACTERISTICS (Note 1) |
| input capacitance | 50 pF | — | — | VDS = 10 V, VGS = 0 V, f = 1.0 MHz; ciss; FDV303N | onsemi datasheet, p. 3 — FDV303N |
| output capacitance | 28 pF | — | — | VDS = 10 V, VGS = 0 V, f = 1.0 MHz; coss; FDV303N | onsemi datasheet, p. 3 — FDV303N |
| reverse transfer capacitance | 9 pF | — | — | VDS = 10 V, VGS = 0 V, f = 1.0 MHz; crss; FDV303N | onsemi datasheet, p. 3 — FDV303N |
| rise time | 8.5 ns | — | 18 ns | VDD = 6 V, ID = 0.5 A, VGS = 4.5 V, RGEN = 50 Ω; tr; SWITCHING CHARACTERISTICS (Note 1) | onsemi datasheet, p. 3 — SWITCHING CHARACTERISTICS (Note 1) |
| fall time | 13 ns | — | 25 ns | VDD = 6 V, ID = 0.5 A, VGS = 4.5 V, RGEN = 50 Ω; tf; SWITCHING CHARACTERISTICS (Note 1) | onsemi datasheet, p. 3 — SWITCHING CHARACTERISTICS (Note 1) |
Closest matches to FDV303N
Frequently asked questions
What is the breakdown voltage ds for the FDV303N?
The breakdown voltage ds is 25 V at VGS = 0 V, ID = 250 μA under OFF CHARACTERISTICS.
What is the drain current when VGS = 2.7 V and VDS = 5 V?
The drain current is 500 mA.
What is the fall time (tf) of the FDV303N?
The fall time is 25 ns at VDD = 6 V, ID = 0.5 A, VGS = 4.5 V, and RGEN = 50 Ω.
What is the input capacitance (Ciss) of the FDV303N?
The input capacitance is 50 pF at VDS = 10 V, VGS = 0 V, and f = 1.0 MHz.
What is the maximum operating temperature for the FDV303N?
The maximum operating temperature is 150 °C.
What is the output capacitance (coss) of the FDV303N?
The output capacitance is 28 pF at VDS = 10 V, VGS = 0 V, and f = 1.0 MHz.
What is the output current (id) for the FDV303N?
The output current (id) for the FDV303N is 682 mA.
What is the power dissipation of the FDV303N?
The power dissipation is 350 mW at pd; FDV303N.
What is the maximum on-resistance (rds on) of the FDV303N at V_GS = 4.5 V and I_D = 0.5 A?
The maximum on-resistance (rds on) is 330 mOhm.
What is the reverse transfer capacitance (crss) of the FDV303N?
The reverse transfer capacitance is 9 pF at VDS = 10 V, VGS = 0 V, and f = 1.0 MHz.
What is the rise time (tr) of the FDV303N when VDD = 6 V, ID = 0.5 A, VGS = 4.5 V, and RGEN = 50 Ω?
The rise time is 18 ns.
What is the supply voltage range (vdss) for the FDV303N?
The supply voltage range (vdss) for the FDV303N is 25 V.