Build with PMV65XP — Datasheet Specs & AI Design Help

00 — Overview

What the PMV65XP does

The PMV65XPEA is a 20 V, P-channel Trench MOSFET in a TO-236AB surface-mounted package. It features very fast switching, 890 mW total power dissipation, and 2 kV HBM ESD protection. The device supports a drain-source voltage of 20 V, a gate-source voltage range of -12 to 12 V, and a continuous drain current of 3.3 A. It is typically used as a relay driver, high-speed line driver, high-side load switch, or in general switching circuits. The part is AEC-Q101 qualified for automotive applications and operates across a junction temperature range of -55 to 150 °C.

Next step

Start building with PMV65XP → Every number above is cited straight from the datasheet — ask what they mean for your design, and the assistant answers from the same source documents.

01 — Key specifications

Datasheet parameters

Datasheet parameters for PMV65XP
Parameter	Min	Typ	Max	Conditions	Source
rds on	—	67 mOhm	78 mOhm	VGS = -4.5 V; ID = -2.8 A; Tj = 25 °C; rdson; Static characteristics	Nexperia datasheet, p. 1 — Table 1. Quick reference data
operating temperature (abs max)	-55 °C	—	150 °C	tamb; Limiting values	Nexperia datasheet, p. 3 — Table 5. Limiting values
power dissipation (abs max)	—	—	480 mW	[2]; ptot; Limiting values	Nexperia datasheet, p. 3 — Table 5. Limiting values
reverse leakage current	—	—	-1 µA	VDS = -20 V; VGS = 0 V; Tj = 25 °C; idss; Static characteristics	Nexperia datasheet, p. 7 — Table 7. Characteristics
breakdown voltage ds	-20 V	—	—	ID = -250 μA; VGS = 0 V; Tj = 25 °C; v(br); Static characteristics	Nexperia datasheet, p. 7 — Table 7. Characteristics
drain current	—	—	-3.3 A	[1]; id; Quick reference data	Nexperia datasheet, p. 1 — Table 1. Quick reference data
vgs threshold	—	-1 V	—	ID = -250 µA; VDS = VGS; Tj = 25 °C	Nexperia datasheet, p. 7 — Table 7. Characteristics
input capacitance	—	618 pF	—	VDS = -10 V; f = 1 MHz; VGS = 0 V; Tj = 25 °C; ciss; Dynamic characteristics	Nexperia datasheet, p. 7 — Table 7. Characteristics
output capacitance	—	80 pF	—	VDS = -10 V; f = 1 MHz; VGS = 0 V; Tj = 25 °C; coss; Dynamic characteristics	Nexperia datasheet, p. 7 — Table 7. Characteristics
reverse transfer capacitance	—	58 pF	—	VDS = -10 V; f = 1 MHz; VGS = 0 V; Tj = 25 °C; crss; Dynamic characteristics	Nexperia datasheet, p. 7 — Table 7. Characteristics
gate charge	—	5 nC	9 nC	VDS = -10 V; ID = -2.8 A; VGS = -4.5 V; Tj = 25 °C; qg(tot); Dynamic characteristics	Nexperia datasheet, p. 7 — Table 7. Characteristics
rise time	—	19 ns	—	VDS = -10 V; ID = -2.8 A; VGS = -4.5 V; RG(ext) = 6 Ω; Tj = 25 °C; tr; Dynamic characteristics	Nexperia datasheet, p. 7 — Table 7. Characteristics
fall time	—	17 ns	—	VDS = -10 V; ID = -2.8 A; VGS = -4.5 V; RG(ext) = 6 Ω; Tj = 25 °C; tf; Dynamic characteristics	Nexperia datasheet, p. 7 — Table 7. Characteristics
emitter base voltage (abs max)	-12 V	—	12 V	gate-source voltage; Tj = 25 °C	Nexperia datasheet, p. 3 — Table 5. Limiting values

02 — Alternatives

Closest matches to PMV65XP

HL2301A 3.0× higher drain current, 1.8× higher rise time, 1.7× lower fall time

Si2301CDS 3.3× higher power dissipation, 1.8× higher rise time, 1.7× lower fall time

MDD2301 2.5× higher power dissipation, 2.0× lower rds on, 1.9× lower input capacitance

MDD3401 5.0× lower rise time, 2.5× higher power dissipation, 1.7× higher gate charge

DMP3099L 3.8× lower rise time, 3.3× higher drain current, 2.3× higher power dissipation

HL6042 9.1× higher drain current, 3.1× higher power dissipation, 2.1× lower rise time

AO3407A 9.1× higher drain current, 2.9× higher power dissipation, 2.8× lower rise time

HL3415A 7.0× higher drain current, 2.7× higher power dissipation, 2.2× higher gate charge

03 — FAQ

Frequently asked questions

What is the breakdown voltage ds under the conditions ID = -250 μA, VGS = 0 V, and Tj = 25 °C?

The breakdown voltage ds is -20 V.

What is the drain current (ID) for the PMV65XPEA?

The drain current is -3.3 A.

What is the emitter base voltage when the gate-source voltage is applied at Tj = 25 °C?

The emitter base voltage is 12 V.

What is the fall time (tf) of the PMV65XPEA under the conditions VDS = -10 V, ID = -2.8 A, VGS = -4.5 V, RG(ext) = 6 Ω, and Tj = 25 °C?

The fall time is 17 ns.

What is the total gate charge (qg(tot)) for the PMV65XPEA under the conditions VDS = -10 V, ID = -2.8 A, VGS = -4.5 V, and Tj = 25 °C?

The total gate charge is 5 nC.

What is the input capacitance (Ciss) of the PMV65XPEA under the conditions VDS = -10 V, f = 1 MHz, VGS = 0 V, and Tj = 25 °C?

The input capacitance is 618 pF.

What is the maximum operating temperature (tamb) listed in the Limiting values?

The maximum operating temperature (tamb) is 150 °C.

What is the output capacitance (coss) of the PMV65XPEA under the conditions VDS = -10 V, f = 1 MHz, VGS = 0 V, and Tj = 25 °C?

The output capacitance (coss) is 80 pF.

What is the power dissipation (ptot) under Limiting values?

The power dissipation is 480 mW.

What is the rds on value under the condition VGS = -4.5 V; ID = -2.8 A; Tj = 25 °C; rdson; Static characteristics?

The rds on value is 67 mOhm.

What is the reverse leakage current (idss) for the PMV65XPEA under static characteristics conditions?

The reverse leakage current is -1 µA at VDS = -20 V, VGS = 0 V, and Tj = 25 °C.

What is the reverse transfer capacitance (crss) of the PMV65XPEA?

The reverse transfer capacitance is 58 pF at VDS = -10 V, f = 1 MHz, VGS = 0 V, and Tj = 25 °C.