transistors-thyristors

PMV65XP

Full part number: PMV65XPEA

Key datasheet specifications and the closest alternatives, ranked by parametric similarity and grounded in the manufacturer datasheet.

01 — Overview

This Nexperia datasheet covers the PMV65XPEA, a 20 V P-channel Trench MOSFET in an SOT23 package. It details electrical characteristics for relay drivers and high-side switches. Key parameters include -20 V drain-source voltage, -3.3 A continuous current, and 890 mW power dissipation. The device features fast switching, ESD protection up to 2 kV HBM, and is AEC-Q101 qualified for automotive use.

02 — Key specifications

Datasheet parameters

ParameterMinTypMaxConditions
rds on — 67 mOhm 78 mOhm VGS = -4.5 V; ID = -2.8 A; Tj = 25 °C
operating temperature -55 °C — 150 °C
power dissipation — 480 mW —
reverse leakage current — — -1 µA VDS = -20 V; VGS = 0 V; Tj = 25 °C
breakdown voltage ds -20 V — — ID = -250 μA; VGS = 0 V; Tj = 25 °C
drain current — — -3.3 A VGS = -4.5 V; Tamb = 25 °C; t ≤ 5 s; [1]
vgs threshold — -1 V —
input capacitance — 618 pF — VDS = -10 V; f = 1 MHz; VGS = 0 V; Tj = 25 °C
output capacitance — 80 pF — VDS = -10 V; f = 1 MHz; VGS = 0 V; Tj = 25 °C
reverse transfer capacitance — 58 pF — VDS = -10 V; f = 1 MHz; VGS = 0 V; Tj = 25 °C
gate charge — 5 nC 9 nC VDS = -10 V; ID = -2.8 A; VGS = -4.5 V; Tj = 25 °C
rise time — 19 ns — VDS = -10 V; ID = -2.8 A; VGS = -4.5 V; RG(ext) = 6 Ω; Tj = 25 °C
fall time — 17 ns — VDS = -10 V; ID = -2.8 A; VGS = -4.5 V; RG(ext) = 6 Ω; Tj = 25 °C
collector emitter voltage — -20 V —
emitter base voltage — -12 V —
03 — Alternatives

Closest matches to PMV65XP

Si2301CDS 3.3× higher power dissipation, 1.8× higher rise time, 1.7× lower fall time
DMP3099L-13 3.8× lower rise time, 3.3× higher drain current, 2.3× higher power dissipation
AO3407A 9.1× higher drain current, 2.8× lower rise time, 2.5× higher gate charge
Si2302CDS 2.7× lower rise time, 2.4× lower fall time, 1.9× lower input capacitance
AO3401A 5.4× lower rise time, 2.9× higher power dissipation, 2.8× higher gate charge
AO3400A 7.6× lower rise time, 4.2× lower fall time, 3.7× lower rds on
AOD409 18.2× higher drain current, 8.8× higher gate charge, 4.8× higher input capacitance
FDV303N 12.4× lower input capacitance, 6.4× lower reverse transfer capacitance, 4.9× higher rds on
04 — FAQ

Frequently asked questions

What is the breakdown voltage (ds) of the PMV65XPEA?

The breakdown voltage (ds) is -20 V at ID = -250 μA, VGS = 0 V, and Tj = 25 °C.

What is the collector-emitter voltage of the PMV65XPEA?

The collector-emitter voltage is -20 V.

What is the drain current of the PMV65XPEA?

The drain current is -3.3 A at VGS = -4.5 V; Tamb = 25 °C; t ≤ 5 s; [1].

What is the emitter base voltage?

The emitter base voltage is -12 V.

What is the fall time of the PMV65XPEA at VDS = -10 V, ID = -2.8 A, VGS = -4.5 V, RG(ext) = 6 Ω, and Tj = 25 °C?

The fall time is 17 ns.

What is the gate charge of the PMV65XPEA at VDS = -10 V, ID = -2.8 A, VGS = -4.5 V, and Tj = 25 °C?

The gate charge is 5 nC.

What is the input capacitance of the PMV65XPEA?

The input capacitance is 618 pF at VDS = -10 V; f = 1 MHz; VGS = 0 V; Tj = 25 °C.

What is the maximum operating temperature?

The maximum operating temperature is 150 °C.

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