transistors thyristors

AO3400A

Every spec below is cited to the manufacturer datasheet. Compare the closest alternatives, then ask the assistant what it means for your design.

00 — Overview

What the AO3400A does

The AO3400A is a 30V N-Channel MOSFET featuring advanced trench technology and a low resistance package. It supports continuous drain currents up to 5.7A and offers extremely low on-resistance, measuring less than 26.5mW at 10V gate drive. The device operates across a junction temperature range of -55 to 150°C with a maximum drain-source breakdown voltage of 30V. Engineers typically use this component as a load switch or in PWM applications where efficient power handling is required. It includes a body diode with a reverse recovery time of 8.5ns and features low input capacitance for fast switching speeds.

Next step
Start building with AO3400A → Every number above is cited straight from the datasheet — ask what they mean for your design, and the assistant answers from the same source documents.
01 — Key specifications

Datasheet parameters

Datasheet parameters for AO3400A
ParameterMinTypMaxConditionsSource
rds on — 18 mOhm 26.5 mOhm VGS = 10V, ID = 5.7A; rds(on); STATIC PARAMETERS Alpha & Omega Semiconductor datasheet, p. 2 — Product Summary
forward voltage — 700 mV 1 V IS = 1A, VGS = 0V; vsd; STATIC PARAMETERS Alpha & Omega Semiconductor datasheet, p. 2 — Product Summary
operating temperature -55 °C — 150 °C Alpha & Omega Semiconductor datasheet, p. 1 — Product Summary
power dissipation — — 1.4 W TA = 25°C; Product Summary Alpha & Omega Semiconductor datasheet, p. 1 — Product Summary
reverse leakage current — — 1 µA VDS = 30V, VGS = 0V; idss; STATIC PARAMETERS Alpha & Omega Semiconductor datasheet, p. 2 — Product Summary
breakdown voltage ds 30 V — — ID = 250μA, VGS = 0V; STATIC PARAMETERS Alpha & Omega Semiconductor datasheet, p. 2 — Product Summary
drain current — — 5.7 A TA = 25°C; continuous; Product Summary Alpha & Omega Semiconductor datasheet, p. 1 — Product Summary
vgs threshold 650 mV 1.05 V 1.45 V VDS = VGSID = 250μA; vgs(th); STATIC PARAMETERS Alpha & Omega Semiconductor datasheet, p. 2 — Product Summary
input capacitance — 630 pF — VGS = 0V, VDS = 15V, f = 1MHz; ciss; DYNAMIC PARAMETERS Alpha & Omega Semiconductor datasheet, p. 2 — Product Summary
output capacitance — 75 pF — VGS = 0V, VDS = 15V, f = 1MHz; coss; DYNAMIC PARAMETERS Alpha & Omega Semiconductor datasheet, p. 2 — Product Summary
reverse transfer capacitance — 50 pF — VGS = 0V, VDS = 15V, f = 1MHz; crss; DYNAMIC PARAMETERS Alpha & Omega Semiconductor datasheet, p. 2 — Product Summary
gate charge — 6 nC 7 nC VGS = 4.5V, VDS = 15V, ID = 5.7A; qg; SWITCHING PARAMETERS Alpha & Omega Semiconductor datasheet, p. 2 — Product Summary
rise time — 2.5 ns — VGS = 10V, VDS = 15V, RL = 2.6Ω, RGEN = 3Ω; tr; SWITCHING PARAMETERS Alpha & Omega Semiconductor datasheet, p. 2 — Product Summary
fall time — 4 ns — VGS = 10V, VDS = 15V, RL = 2.6Ω, RGEN = 3Ω; tf; SWITCHING PARAMETERS Alpha & Omega Semiconductor datasheet, p. 2 — Product Summary
reverse recovery time — 8.5 ns — IF = 5.7A, dl/dt = 100A/μs; trr; SWITCHING PARAMETERS Alpha & Omega Semiconductor datasheet, p. 2 — Product Summary
02 — Alternatives

Closest matches to AO3400A

MDD2302 14.4× higher rise time, 2.5× higher fall time, 1.9× lower input capacitance
HL2300 7.9× higher rise time, 5.8× higher fall time, 5.3× higher drain current
Si2302CDS 2.8× higher rise time, 2.5× higher rds on, 2.0× lower input capacitance
AO3402 15.0× higher reverse leakage current, 2.8× lower reverse transfer capacitance, 2.7× lower input capacitance
HJ8205 3.8× higher drain current, 3.3× higher rise time, 2.8× higher reverse transfer capacitance
HL2302 11.6× higher rise time, 5.5× higher fall time, 5.2× lower input capacitance
HL3400A 5.3× higher drain current, 4.0× lower power dissipation, 1.9× higher rds on
2N7002 19.0× lower drain current, 14.3× lower reverse transfer capacitance, 11.0× lower output capacitance
03 — FAQ

Frequently asked questions

What is the breakdown voltage ds for the AO3400A?

The breakdown voltage ds is 30 V at ID = 250μA, VGS = 0V; STATIC PARAMETERS.

What is the continuous drain current of the AO3400A at TA = 25°C?

The continuous drain current is 5.7 A at TA = 25°C.

What is the fall time (tf) of the AO3400A under switching parameters conditions?

The fall time is 4 ns when VGS = 10V, VDS = 15V, RL = 2.6Ω, and RGEN = 3Ω.

What is the forward voltage (VSD) of the AO3400A when IS = 1A and VGS = 0V?

The forward voltage is 700 mV.

What is the gate charge (Qg) of the AO3400A under the conditions VGS = 4.5V, VDS = 15V, and ID = 5.7A?

The gate charge is 6 nC.

What is the input capacitance (Ciss) of the AO3400A?

The input capacitance is 630 pF when VGS = 0V, VDS = 15V, and f = 1MHz.

What is the maximum operating temperature for the AO3400A?

The operating temperature is 150 °C.

What is the output capacitance (coss) of the AO3400A?

The output capacitance is 75 pF at VGS = 0V, VDS = 15V, and f = 1MHz.

What is the power dissipation of the AO3400A at TA = 25°C?

The power dissipation is 1.4 W.

What is the rds(on) value when VGS = 10V and ID = 5.7A?

The rds(on) is 18 mOhm.

What is the reverse leakage current (idss) of the AO3400A?

The reverse leakage current is 1 µA at VDS = 30V and VGS = 0V.

What is the reverse recovery time (trr) under the condition of IF = 5.7A and dl/dt = 100A/μs?

The reverse recovery time is 8.5 ns.

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