AO3400A — Datasheet Summary, Specs & Alternatives

01 — Overview

This datasheet covers the AO3400A, a 30V N-Channel MOSFET in an SOT23 package. It serves as a comprehensive technical reference for engineers designing load switches or PWM circuits. Key parameters include a maximum drain current of 5.7A at 10V, static on-resistance under 26.5mW at 10V, and gate threshold voltage between 0.65V and 1.45V. The document details absolute ratings like 300V drain-source voltage and thermal characteristics such as junction-to-ambient resistance up to 125°C/W.

02 — Key specifications

Datasheet parameters

Parameter	Min	Typ	Max	Conditions
rds on	—	18 mOhm	26.5 mOhm	VGS = 10V, ID = 5.7A
forward voltage	—	700 mV	1 V	IS = 1A, VGS = 0V
operating temperature	-55 °C	—	150 °C
power dissipation	1.4 W	—	—	TA = 25°C
reverse leakage current	—	—	1 µA	VDS = 30V, VGS = 0V
breakdown voltage ds	30 V	—	—	ID = 250μA, VGS = 0V
drain current	5.7 A	—	—	TA = 25°C
vgs threshold	650 mV	1.05 V	1.45 V	VDS = VGSID = 250μA
input capacitance	—	630 pF	—	VGS = 0V, VDS = 15V, f = 1MHz
output capacitance	—	75 pF	—	VGS = 0V, VDS = 15V, f = 1MHz
reverse transfer capacitance	—	50 pF	—	VGS = 0V, VDS = 15V, f = 1MHz
gate charge	—	6 nC	7 nC	VGS = 4.5V, VDS = 15V, ID = 5.7A
rise time	—	2.5 ns	—	VGS = 10V, VDS = 15V, RL = 2.6Ω, RGEN = 3Ω
fall time	—	4 ns	—	VGS = 10V, VDS = 15V, RL = 2.6Ω, RGEN = 3Ω
reverse recovery time	—	8.5 ns	—	IF = 5.7A, dl/dt = 100A/μs

03 — Alternatives

Closest matches to AO3400A

Si2302CDS 2.8× higher rise time, 2.5× higher rds on, 2.0× lower power dissipation

AO3402 15.0× higher reverse leakage current, 2.8× lower reverse transfer capacitance, 2.7× lower input capacitance

DMP3099L-13 3.8× higher fall time, 3.6× higher rds on, 2.0× higher rise time

AO3401A 2.3× higher gate charge, 2.2× higher fall time, 1.4× higher rise time

DMG2302UK 10.0× higher reverse leakage current, 4.8× lower input capacitance, 4.3× lower gate charge

2N7002-13-F 6.8× lower output capacitance, 5.7× lower drain current, 3.8× lower power dissipation

2N7002K 17.9× lower output capacitance, 17.2× lower reverse transfer capacitance, 15.0× lower drain current

Si2301CDS 14.0× higher rise time, 5.0× higher rds on, 3.5× higher reverse recovery time

04 — FAQ

Frequently asked questions

What is the breakdown voltage (ds) of the AO3400A?

The breakdown voltage (ds) is 30 V when ID = 250μA and VGS = 0V.

What is the drain current of the AO3400A at TA = 25°C?

The drain current is 5.7 A at TA = 25°C.

What is the fall time of the AO3400A when VGS = 10V, VDS = 15V, RL = 2.6Ω, and RGEN = 3Ω?

The fall time is 4 ns.

What is the forward voltage when IS = 1A and VGS = 0V?

The forward voltage is 700 mV.

What is the gate charge of the AO3400A at VGS = 4.5V, VDS = 15V, and ID = 5.7A?

The gate charge is 6 nC.

What is the input capacitance of the AO3400A?

The input capacitance is 630 pF at VGS = 0V, VDS = 15V, and f = 1MHz.

What is the maximum operating temperature for the AO3400A?

The operating temperature is 150 °C.

What is the output capacitance of the AO3400A?

The output capacitance is 75 pF at VGS = 0V, VDS = 15V, and f = 1MHz.