transistors-thyristors

DMG1012

Full part number: DMG1012T-13

Key datasheet specifications and the closest alternatives, ranked by parametric similarity and grounded in the manufacturer datasheet.

01 — Overview

This datasheet covers the DMG1012T-7 and DMG1012T-13 N-channel enhancement mode MOSFETs from Diodes Incorporated, packaged in SOT523. The document defines electrical specifications for automotive and commercial applications, including a 20V drain-source voltage rating and 0.64A continuous current at +85°C. Key performance metrics include an on-resistance of 0.4Ω typical at 2.5V gate drive, low input capacitance of 60pF, and fast switching speeds with turn-on delay under 5ns. The device features ESD protection up to 2kV, operates between -55°C and +150°C, and is fully RoHS compliant with lead-free materials.

02 — Key specifications

Datasheet parameters

Parameter	Min	Typ	Max	Conditions
rds on	—	300 mOhm	400 mOhm	VGS = 4.5V, ID = 600mA
forward voltage	—	700 mV	1.2 V	VGS = 0V, IS = 150mA
operating temperature	-55 °C	—	150 °C
power dissipation	—	—	280 mW
reverse leakage current	—	—	100 nA	VDS = 20V, VGS = 0V
breakdown voltage ds	—	—	20 V
drain current	—	—	630 mA	Steady State; TA = +25°C
vgs threshold	500 mV	—	1 V	VDS = VGS, ID = 250µA
input capacitance	—	60.7 pF	—	VDS = 16V, VGS = 0V, f = 1.0MHz
output capacitance	—	9.68 pF	—	VDS = 16V, VGS = 0V, f = 1.0MHz
reverse transfer capacitance	—	5.37 pF	—	VDS = 16V, VGS = 0V, f = 1.0MHz
gate charge	—	737 pC	—	VGS = 4.5V, VDS = 10V, ID = 250mA
rise time	—	7.4 ns	—	VDD = 10V, VGS = 4.5V, RL = 47Ω, RG = 10Ω, ID = 200mA
fall time	—	12.3 ns	—	VDD = 10V, VGS = 4.5V, RL = 47Ω, RG = 10Ω, ID = 200mA
collector emitter voltage	—	20 V	—

03 — Alternatives

Closest matches to DMG1012

FDV303N 10.0× higher reverse leakage current, 2.9× higher output capacitance, 1.8× higher rise time

RUM002N02T2L 10.0× higher reverse leakage current, 3.1× lower drain current, 2.7× higher rds on

BSS138PS 10.0× higher reverse leakage current, 3.3× higher rds on, 3.1× lower fall time

FDV301N 10.3× higher rds on, 6.4× lower input capacitance, 4.1× lower reverse transfer capacitance

Si2302CDS 15.9× higher drain current, 10.3× higher output capacitance, 10.0× higher reverse leakage current

2N7002K 10.0× higher reverse leakage current, 4.0× higher rds on, 3.0× higher breakdown voltage ds

DMG2302UK 19.0× higher drain current, 7.2× lower fall time, 4.9× lower rds on

RUM001L02T2CL 10.0× higher reverse leakage current, 8.5× lower input capacitance, 8.3× higher rds on

04 — FAQ

Frequently asked questions

What is the breakdown voltage ds for the DMG1012T-13?

The breakdown voltage ds is 20 V.

What is the collector-emitter voltage of the DMG1012T-13?

The collector-emitter voltage is 20 V.

What is the steady-state drain current at TA = +25°C?

The steady-state drain current at TA = +25°C is 630 mA.

What is the fall time of the DMG1012T-13 when VDD = 10V, VGS = 4.5V, RL = 47Ω, RG = 10Ω, and ID = 200mA?

The fall time is 12.3 ns.

What is the forward voltage when VGS = 0V and IS = 150mA?

The forward voltage is 700 mV at VGS = 0V and IS = 150mA.

What is the gate charge of the DMG1012T-13 when VGS = 4.5V, VDS = 10V, and ID = 250mA?

The gate charge is 737 pC.

What is the input capacitance of the DMG1012T-13?

The input capacitance is 60.7 pF at VDS = 16V, VGS = 0V, and f = 1.0MHz.

What is the maximum operating temperature for the DMG1012T-13?

The operating temperature is 150 °C.

Refine this search on whatic.io →