Build with DMG1012 — Datasheet Specs & AI Design Help

00 — Overview

What the DMG1012 does

The DMG1012T is an N-channel enhancement mode MOSFET in the SOT523 package. It features a 20 V drain-source breakdown voltage, 0.6435 A continuous drain current, and 0.4 Ω typical on-resistance. The device operates from -55 to +150 °C with fast switching speeds and low input capacitance. It is suitable for automotive applications requiring AEC-Q100 qualification and general power switching tasks where low gate threshold voltage and ESD protection are required.

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Start building with DMG1012 → Every number above is cited straight from the datasheet — ask what they mean for your design, and the assistant answers from the same source documents.

01 — Key specifications

Datasheet parameters

Datasheet parameters for DMG1012
Parameter	Min	Typ	Max	Conditions	Source
rds on	—	300 mOhm	400 mOhm	VGS = 4.5V, ID = 600mA; (on); ON CHARACTERISTICS (Note 7)	Diodes datasheet, p. 2 — Marking Information
forward voltage	—	700 mV	1.2 V	VGS = 0V, IS = 150mA; ON CHARACTERISTICS (Note 7)	Diodes datasheet, p. 2 — Marking Information
operating temperature	-55 °C	—	150 °C		Diodes datasheet, p. 2 — Marking Information
power dissipation	—	280 mW	—		Diodes datasheet, p. 2 — Marking Information
breakdown voltage ds	—	—	20 V	Marking Information	Diodes datasheet, p. 2 — Marking Information
drain current	—	—	630 mA	TA = +25°C; continuous(note 6); Marking Information	Diodes datasheet, p. 2 — Marking Information
vgs threshold	500 mV	—	1 V	VDS = VGS, ID = 250µA; gate(th); ON CHARACTERISTICS (Note 7)	Diodes datasheet, p. 2 — Marking Information
input capacitance	—	60.7 pF	—	VDS = 16V, VGS = 0V, f = 1.0MHz; DYNAMIC CHARACTERISTICS (Note 8)	Diodes datasheet, p. 2 — Marking Information
output capacitance	—	9.68 pF	—	VDS = 16V, VGS = 0V, f = 1.0MHz; DYNAMIC CHARACTERISTICS (Note 8)	Diodes datasheet, p. 2 — Marking Information
reverse transfer capacitance	—	5.37 pF	—	VDS = 16V, VGS = 0V, f = 1.0MHz; DYNAMIC CHARACTERISTICS (Note 8)	Diodes datasheet, p. 2 — Marking Information
gate charge	—	737 pC	—	VGS = 4.5V, VDS = 10V, ID = 250mA; DYNAMIC CHARACTERISTICS (Note 8)	Diodes datasheet, p. 2 — Marking Information
rise time	—	7.4 ns	—	VDD = 10V, VGS = 4.5V, RL = 47Ω, RG = 10Ω, ID = 200mA; turn; DYNAMIC CHARACTERISTICS (Note 8)	Diodes datasheet, p. 2 — Marking Information
fall time	—	12.3 ns	—	VDD = 10V, VGS = 4.5V, RL = 47Ω, RG = 10Ω, ID = 200mA; turn; DYNAMIC CHARACTERISTICS (Note 8)	Diodes datasheet, p. 2 — Marking Information

02 — Alternatives

Closest matches to DMG1012

RUM002N02T2L 10.0× higher reverse leakage current, 2.7× higher rds on, 2.4× lower input capacitance

FDV303N 10.0× higher reverse leakage current, 6.0× lower drain current, 2.9× higher output capacitance

FDV301N 15.0× lower drain current, 12.7× higher rds on, 6.4× lower input capacitance

BSS123 20.0× higher rds on, 17.6× lower drain current, 5.0× higher breakdown voltage ds

BSS138PS 10.0× higher reverse leakage current, 9.4× lower drain current, 3.1× lower fall time

BSS138W 13.6× lower drain current, 11.7× higher rds on, 5.0× higher reverse leakage current

HJ8205 16.9× higher output capacitance, 10.0× lower rds on, 10.0× higher reverse leakage current

HL2302 10.0× higher reverse leakage current, 6.7× lower rds on, 6.1× higher gate charge

03 — FAQ

Frequently asked questions

What is the breakdown voltage ds for the DMG1012T?

The breakdown voltage ds is 20 V according to the Marking Information.

What is the continuous drain current of the DMG1012T at TA = +25°C?

The continuous drain current is 630 mA.

What is the fall time of the DMG1012T under the conditions VDD = 10V, VGS = 4.5V, RL = 47Ω, RG = 10Ω, ID = 200mA?

The fall time is 12.3 ns.

What is the forward voltage of the DMG1012T when VGS = 0V and IS = 150mA?

The forward voltage is 700 mV.

What is the gate charge (Qg) of the DMG1012T under dynamic characteristics conditions?

The gate charge is 737 pC when VGS = 4.5V, VDS = 10V, and ID = 250mA.

What is the input capacitance of the DMG1012T?

The input capacitance is 60.7 pF at VDS = 16V, VGS = 0V, f = 1.0MHz under DYNAMIC CHARACTERISTICS (Note 8).

What is the maximum operating temperature for the DMG1012T?

The operating temperature is 150 °C.

What is the output capacitance of the DMG1012T?

The output capacitance is 9.68 pF at VDS = 16V, VGS = 0V, f = 1.0MHz under DYNAMIC CHARACTERISTICS (Note 8).

What is the power dissipation of the DMG1012T?

The power dissipation is 280 mW.

What is the maximum on-resistance (rds on) for the DMG1012T at VGS = 4.5V and ID = 600mA?

The on-resistance (rds on) is 300 mOhm at VGS = 4.5V, ID = 600mA; (on); ON CHARACTERISTICS (Note 7).

What is the reverse transfer capacitance of the DMG1012T under the condition VDS = 16V, VGS = 0V, f = 1.0MHz?

The reverse transfer capacitance is 5.37 pF.

What is the rise time of the DMG1012T under the conditions VDD = 10V, VGS = 4.5V, RL = 47Ω, RG = 10Ω, ID = 200mA?

The rise time is 7.4 ns.