Si2301
Full part number: Si2301CDS
Every spec below is cited to the manufacturer datasheet. Compare the closest alternatives, then ask the assistant what it means for your design.
What the Si2301 does
The Si2301CDS is a P-channel 20 V trench MOSFET available in lead-free and halogen-free packaging. It features a drain-source breakdown voltage of 20 V, an on-state resistance of 0.112 ohms at -4.5 V gate drive, and a total gate charge of 3.3 nC. The device supports continuous drain currents up to 2.3 A at 25°C and pulsed currents to 10 A. Engineers typically use this component for load switching applications requiring compact SOT-23 packaging. It operates across a junction temperature range of -55 to 150°C and includes an integrated body diode with a reverse recovery time of 30 ns.
Datasheet parameters
| Parameter | Min | Typ | Max | Conditions | Source |
|---|---|---|---|---|---|
| rds on | — | 90 mOhm | 112 mOhm | VGS = - 4.5 V, ID = - 2.8 A; (on); Static | Vishay datasheet, p. 2 — APPLICATIONS |
| operating temperature | -55 °C | — | 150 °C | Vishay datasheet, p. 1 — APPLICATIONS | |
| power dissipation | 1.6 W | — | 1.6 W | TC = 25 °C; ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) | Vishay datasheet, p. 1 — APPLICATIONS |
| reverse leakage current | — | — | -1 µA | VDS = - 20 V, VGS = 0 V; zero; Static | Vishay datasheet, p. 2 — APPLICATIONS |
| breakdown voltage ds | -20 V | — | — | VGS = 0 V, ID = - 250 μA; Static | Vishay datasheet, p. 2 — APPLICATIONS |
| drain current | -3.1 A | — | -3.1 A | TC = 25 °C; continuous; ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) | Vishay datasheet, p. 1 — APPLICATIONS |
| vgs threshold | -1 V | — | -400 mV | Vishay datasheet, p. 2 — APPLICATIONS | |
| input capacitance | — | 405 pF | — | VDS = - 10 V, VGS = 0 V, f = 1 MHz; Dynamicb | Vishay datasheet, p. 2 — APPLICATIONS |
| output capacitance | — | 75 pF | — | Dynamicb | Vishay datasheet, p. 2 — APPLICATIONS |
| reverse transfer capacitance | — | 55 pF | — | Dynamicb | Vishay datasheet, p. 2 — APPLICATIONS |
| gate charge | — | 5.5 nC | 10 nC | VDS = - 10 V, VGS = - 4.5 V, ID = - 3 A; Dynamicb | Vishay datasheet, p. 2 — APPLICATIONS |
| rise time | — | 35 ns | 60 ns | Dynamicb | Vishay datasheet, p. 2 — APPLICATIONS |
| fall time | — | 10 ns | 20 ns | Dynamicb | Vishay datasheet, p. 2 — APPLICATIONS |
| reverse recovery time | — | 30 ns | 50 ns | IF = - 3.0 A, dl/dt = 100 A/μs, TJ = 25 °C; Drain-Source Body Diode Characteristics | Vishay datasheet, p. 2 — APPLICATIONS |
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Frequently asked questions
What is the breakdown voltage ds for the Si2301CDS?
The breakdown voltage ds is -20 V at VGS = 0 V, ID = - 250 μA; Static.
What is the continuous drain current at TC = 25 °C?
The continuous drain current is -3.1 A at TC = 25 °C.
What is the fall time of the Si2301CDS under Dynamicb conditions?
The fall time is 10 ns.
What is the gate charge of the Si2301CDS at VDS = - 10 V, VGS = - 4.5 V, and ID = - 3 A?
The gate charge is 5.5 nC.
What is the input capacitance of the Si2301CDS?
The input capacitance is 405 pF at VDS = - 10 V, VGS = 0 V, f = 1 MHz; Dynamic.
What is the maximum operating temperature for the Si2301CDS?
The maximum operating temperature is 150 °C.
What is the output capacitance under Dynamicb conditions?
The output capacitance is 75 pF.
What is the power dissipation of the Si2301CDS at TC = 25 °C?
The power dissipation is 1.6 W at TC = 25 °C.
What is the static on-resistance (rds on) of the Si2301CDS at VGS = - 4.5 V and ID = - 2.8 A?
The static on-resistance is 90 mOhm.
What is the reverse leakage current of the Si2301CDS at VDS = - 20 V and VGS = 0 V?
The reverse leakage current is -1 µA.
What is the reverse recovery time of the Si2301CDS Drain-Source Body Diode?
The reverse recovery time is 30 ns at IF = - 3.0 A, dl/dt = 100 A/μs, and TJ = 25 °C.
What is the reverse transfer capacitance of the Si2301CDS under Dynamicb conditions?
The reverse transfer capacitance is 55 pF.