transistors-thyristors

Si2301

Full part number: Si2301CDS

Key datasheet specifications and the closest alternatives, ranked by parametric similarity and grounded in the manufacturer datasheet.

01 — Overview

This datasheet covers the Si2301CDS, a P-Channel 20V MOSFET in TO-236 packaging from Vishay Siliconix. It serves as a technical reference for engineers designing load switch applications. Key parameters include a maximum drain-source voltage of -20 V, on-state resistance between 0.090 and 0.142 ohms depending on gate drive, and continuous drain currents up to 2.5 A at 70°C. The device features low gate charge of 3.3 nC typical and supports operating temperatures from -55 to 150 °C. It is compliant with RoHS and halogen-free standards.

02 — Key specifications

Datasheet parameters

Parameter	Min	Typ	Max	Conditions
rds on	—	90 mOhm	112 mOhm	VGS = - 4.5 V, ID = - 2.8 A
operating temperature	-55 °C	—	150 °C
power dissipation	1.6 W	—	1.6 W	TC = 25 °C
forward current	—	—	-10 A
reverse leakage current	—	—	-1 µA	VDS = - 20 V, VGS = 0 V
breakdown voltage ds	-20 V	—	—	VGS = 0 V, ID = - 250 μA
drain current	-3.1 A	—	-3.1 A	TC = 25 °C
vgs threshold	-1 V	—	-400 mV
input capacitance	—	405 pF	—	VDS = - 10 V, VGS = 0 V, f = 1 MHz
output capacitance	—	75 pF	—
reverse transfer capacitance	—	55 pF	—
gate charge	—	5.5 nC	10 nC	VDS = - 10 V, VGS = - 4.5 V, ID = - 3 A
rise time	—	35 ns	60 ns
fall time	—	10 ns	20 ns
reverse recovery time	—	30 ns	50 ns	IF = - 3.0 A, dl/dt = 100 A/μs, TJ = 25 °C

03 — Alternatives

Closest matches to Si2301

PMV65XPEA 3.3× lower power dissipation, 1.8× lower rise time, 1.7× higher fall time

DMP3099L-13 7.0× lower rise time, 3.5× higher drain current, 2.2× higher vgs threshold

AO3407A 9.7× higher drain current, 5.1× lower rise time, 2.9× higher vgs threshold

AO3401A 10.0× lower rise time, 2.7× lower reverse recovery time, 2.5× higher gate charge

Si2302CDS 5.0× lower rise time, 2.3× lower power dissipation, 2.0× lower rds on

AO3400A 14.0× lower rise time, 5.0× lower rds on, 3.5× lower reverse recovery time

AO3402 4.0× lower fall time, 3.5× lower reverse recovery time, 3.1× lower reverse transfer capacitance

AOD4185 12.9× higher drain current, 7.6× higher gate charge, 7.2× lower rds on

04 — FAQ

Frequently asked questions

What is the breakdown voltage ds of the Si2301CDS?

The breakdown voltage ds is -20 V at VGS = 0 V, ID = - 250 μA.

What is the drain current of the Si2301CDS at TC = 25 °C?

The drain current is -3.1 A at TC = 25 °C.

What is the fall time of the Si2301CDS?

The fall time is 10 ns.

What is the forward current of the Si2301CDS?

The forward current is -10 A.

What is the gate charge of the Si2301CDS?

The gate charge is 5.5 nC at VDS = - 10 V, VGS = - 4.5 V, and ID = - 3 A.

What is the input capacitance of the Si2301CDS?

The input capacitance is 405 pF at VDS = - 10 V, VGS = 0 V, and f = 1 MHz.

What is the maximum operating temperature for the Si2301CDS?

The maximum operating temperature is 150 °C.

What is the output capacitance of the Si2301CDS?

The output capacitance is 75 pF.

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