AOD4185 — Datasheet Summary, Specs & Alternatives

01 — Overview

This datasheet covers the AOD4185 and AOI4185, P-Channel Enhancement Mode MOSFETs in DPAK/IPAK packages. Designed for high-current applications, these devices feature a -40V drain-source voltage rating, 15°C/W junction-to-ambient thermal resistance, and 23mΩ on-resistance at -10V gate drive. They support up to 40A continuous current with excellent thermal performance and are RoHS compliant.

02 — Key specifications

Datasheet parameters

Parameter	Min	Typ	Max	Conditions
rds on	—	12.5 mOhm	152 Ohm	VGS = -10V, ID = -20ATj = 125°CVGS = -4.5V, ID = -15A
operating temperature	-55 °C	—	175 °C
power dissipation	—	—	62.5 W	TC = 25°C
breakdown voltage ds	-40 V	—	—	ID = -250µA, VGS = 0V
drain current	—	—	-40 A	TC = 25°C
input capacitance	—	2.55 nF	—	VGS = 0V, VDS = -20V, f = 1MHz
output capacitance	—	280 pF	—	VGS = 0V, VDS = -20V, f = 1MHz
reverse transfer capacitance	—	190 pF	—	VGS = 0V, VDS = -20V, f = 1MHz
gate charge	—	42 nC	55 nC	VGS = -10V, VDS = -20V, ID = -20A
rise time	—	20 ns	—	VGS = -10V, VDS = -20V, RL = 1Ω, RGEN = 3Ω
fall time	—	30 ns	—	VGS = -10V, VDS = -20V, RL = 1Ω, RGEN = 3Ω
reverse recovery time	—	38 ns	49 ns	IF = -20A, dl/dt = 100A/µs

03 — Alternatives

Closest matches to AOD4185

AOD409 3.4× higher rds on, 2.0× lower fall time, 1.5× higher breakdown voltage ds

BUK7230-55A 3.4× higher rise time, 3.0× lower input capacitance, 2.1× higher rds on

AO3407A 3.8× lower input capacitance, 3.3× lower gate charge, 3.1× higher rds on

Si2301CDS 12.9× lower drain current, 7.6× lower gate charge, 7.2× higher rds on

PMV65XPEA 12.1× lower drain current, 8.4× lower gate charge, 5.4× higher rds on

DMP3099L-13 8.1× lower gate charge, 5.8× lower output capacitance, 5.2× higher rds on

FDV303N 10.0× lower output capacitance, 1.6× lower fall time, 1.5× lower rise time

AO3400A 8.0× lower rise time, 7.5× lower fall time, 7.0× lower gate charge

04 — FAQ

Frequently asked questions

What is the breakdown voltage (ds) of the AOD4185?

The breakdown voltage (ds) is -40 V at ID = -250µA and VGS = 0V.

What is the drain current of the AOD4185 at TC = 25°C?

The drain current is -40 A at TC = 25°C.

What is the fall time of the AOD4185 when VGS = -10V, VDS = -20V, RL = 1Ω, and RGEN = 3Ω?

The fall time is 30 ns.

What is the gate charge of the AOD4185 when VGS = -10V, VDS = -20V, and ID = -20A?

The gate charge is 42 nC.

What is the input capacitance of the AOD4185?

The input capacitance is 2.55 nF at VGS = 0V, VDS = -20V, and f = 1MHz.

What is the maximum operating temperature for the AOD4185?

The maximum operating temperature is 175 °C.

What is the output capacitance of the AOD4185?

The output capacitance is 280 pF at VGS = 0V, VDS = -20V, and f = 1MHz.

What is the power dissipation of the AOD4185 at TC = 25°C?

The power dissipation is 62.5 W at TC = 25°C.