Build with AOD4185 — Datasheet Specs & AI Design Help

00 — Overview

What the AOD4185 does

The AOD4185/AOI4185 is a P-Channel Enhancement Mode Field Effect Transistor utilizing advanced trench technology for high current applications. Available in DPAK and IPAK packages, it features a -40V drain-source voltage, 15mW on-resistance at -10V, and 15A continuous drain current. The device includes a 100% UIS tested body diode and operates across a junction temperature range of -55 to 175°C. Engineers typically select this MOSFET for power switching tasks requiring robust thermal performance and low gate charge in commercial, industrial, and military environments.

Next step

Start building with AOD4185 → Every number above is cited straight from the datasheet — ask what they mean for your design, and the assistant answers from the same source documents.

01 — Key specifications

Datasheet parameters

Datasheet parameters for AOD4185
Parameter	Min	Typ	Max	Conditions	Source
rds on	—	12.5 mOhm	152 Ohm	VGS = -10V, ID = -20ATj = 125°CVGS = -4.5V, ID = -15A; rds(on); STATIC PARAMETERS	Alpha & Omega Semiconductor datasheet, p. 2 — Features
operating temperature	-55 °C	—	175 °C	Junction and Storage Temperature Range	Alpha & Omega Semiconductor datasheet, p. 1 — TO-251A IPAK Bottom View
power dissipation	2.5 W	—	2.5 W	TA = 25°C; Absolute Maximum Ratings TC = 25°C unless otherwise noted	Alpha & Omega Semiconductor datasheet, p. 1 — TO-251A IPAK Bottom View
breakdown voltage ds	-40 V	—	—	ID = -250µA, VGS = 0V; STATIC PARAMETERS	Alpha & Omega Semiconductor datasheet, p. 2 — Features
drain current	-40 A	—	-40 A	TC = 25°C; continuous; Absolute Maximum Ratings TC = 25°C unless otherwise noted	Alpha & Omega Semiconductor datasheet, p. 1 — TO-251A IPAK Bottom View
vgs threshold	—	-1.9 V	—	VDS = VGS, ID = -250 µA	Alpha & Omega Semiconductor datasheet, p. 2 — Features
input capacitance	—	2.55 nF	—	VGS = 0V, VDS = -20V, f = 1MHz; ciss; DYNAMIC PARAMETERS	Alpha & Omega Semiconductor datasheet, p. 2 — Features
output capacitance	—	280 pF	—	VGS = 0V, VDS = -20V, f = 1MHz; coss; DYNAMIC PARAMETERS	Alpha & Omega Semiconductor datasheet, p. 2 — Features
reverse transfer capacitance	—	190 pF	—	VGS = 0V, VDS = -20V, f = 1MHz; crss; DYNAMIC PARAMETERS	Alpha & Omega Semiconductor datasheet, p. 2 — Features
gate charge	—	42 nC	55 nC	VGS = -10V, VDS = -20V, ID = -20A; qg(-10v); SWITCHING PARAMETERS	Alpha & Omega Semiconductor datasheet, p. 2 — Features
rise time	—	20 ns	—	VGS = -10V, VDS = -20V, RL = 1Ω, RGEN = 3Ω; tr; SWITCHING PARAMETERS	Alpha & Omega Semiconductor datasheet, p. 2 — Features
fall time	—	30 ns	—	VGS = -10V, VDS = -20V, RL = 1Ω, RGEN = 3Ω; tf; SWITCHING PARAMETERS	Alpha & Omega Semiconductor datasheet, p. 2 — Features

02 — Alternatives

Closest matches to AOD4185

AOD409 3.4× higher rds on, 2.0× lower fall time, 1.5× higher breakdown voltage ds

BUK7230-55A 3.4× higher rise time, 3.0× lower input capacitance, 2.1× higher rds on

HL3415A 3.8× lower gate charge, 3.1× lower vgs threshold, 2.5× higher rds on

AO3407A 3.8× lower input capacitance, 3.3× lower gate charge, 3.1× higher rds on

HL6042 4.6× lower gate charge, 3.4× higher rds on, 3.4× lower input capacitance

PMV65XPEA 12.1× lower drain current, 8.4× lower gate charge, 5.4× higher rds on

HL2300 6.9× lower gate charge, 6.1× lower input capacitance, 3.4× lower output capacitance

IPD60R360P7S 14.4× higher rds on, 14.2× lower input capacitance, 14.0× lower output capacitance

03 — FAQ

Frequently asked questions

What is the breakdown voltage ds (V(BR)DSS) under the condition of ID = -250µA and VGS = 0V?

The breakdown voltage ds is -40 V.

What is the continuous drain current at TC = 25°C?

The continuous drain current is -40 A at TC = 25°C.

What is the fall time (tf) of the AOD4185 when VGS = -10V, VDS = -20V, RL = 1Ω, and RGEN = 3Ω?

The fall time is 30 ns.

What is the gate charge (qg) of the AOD4185 at VGS = -10V, VDS = -20V, and ID = -20A?

The gate charge is 42 nC.

What is the input capacitance (Ciss) of the AOD4185?

The input capacitance is 2.55 nF when measured at VGS = 0V, VDS = -20V, and f = 1MHz.

What is the operating temperature range for the AOD4185?

The junction and storage temperature range is 175 °C.

What is the output capacitance (Coss) of the AOD4185?

The output capacitance is 280 pF when measured at VGS = 0V, VDS = -20V, and f = 1MHz.

What is the power dissipation of the AOD4185 at TA = 25°C?

The power dissipation is 2.5 W at TA = 25°C.

What is the rds(on) value when VGS = -10V, ID = -20A, and Tj = 125°C?

The rds(on) value is 12.5 mOhm.

What is the reverse transfer capacitance (Crss) of the AOD4185 under the condition VGS = 0V, VDS = -20V, f = 1MHz?

The reverse transfer capacitance (Crss) is 190 pF when measured at VGS = 0V, VDS = -20V, and f = 1MHz.

What is the rise time (tr) of the AOD4185 under the conditions VGS = -10V, VDS = -20V, RL = 1Ω, and RGEN = 3Ω?

The rise time is 20 ns.

What is the VGS threshold voltage for the AOD4185?

The VGS threshold voltage is -1.9 V when VDS = VGS and ID = -250 µA.