AO3401A — Datasheet Summary, Specs & Alternatives

01 — Overview

This datasheet covers the AO3401A, a 30V P-Channel MOSFET in SOT23 packaging. It serves as a technical reference for load switching and general applications requiring low gate charge and operation at voltages as low as 2.5V. Key parameters include a drain-source breakdown voltage of -30V, continuous drain current up to -4A at 25°C, and on-resistance below 50mW at Vgs=-10V. The device features low thermal resistance and dynamic capacitances suitable for efficient power management circuits.

02 — Key specifications

Datasheet parameters

Parameter	Min	Typ	Max	Conditions
rds on	—	4.16 Ohm	5.08 Ohm	VGS = -10V, ID = -4.0ATJ = 125°C
operating temperature	-55 °C	—	150 °C
power dissipation	1.4 W	—	—	TA = 25°C
breakdown voltage ds	-30 V	—	—	ID = -250µA, VGS = 0V
drain current	-4 A	—	—	TA = 25°C
input capacitance	—	645 pF	—	VGS = 0V, VDS = -15V, f = 1MHz
output capacitance	—	80 pF	—	VGS = 0V, VDS = -15V, f = 1MHz
reverse transfer capacitance	—	55 pF	—	VGS = 0V, VDS = -15V, f = 1MHz
gate charge	—	14 nC	—	VGS = -10V, VDS = -15V, ID = -4.0A
rise time	—	3.5 ns	—	VGS = -10V, VDS = -15V, RL = 3.75Ω, RGEN = 3Ω
fall time	—	9 ns	—	VGS = -10V, VDS = -15V, RL = 3.75Ω, RGEN = 3Ω
reverse recovery time	—	11 ns	—	IF = -4.0A, dl/dt = 100A/µs

03 — Alternatives

Closest matches to AO3401A

AO3407A 7.5× higher drain current, 2.0× higher reverse recovery time, 1.9× higher rise time

Si2301CDS 10.0× higher rise time, 2.7× higher reverse recovery time, 2.5× lower gate charge

DMP3099L-13 2.8× higher drain current, 2.7× lower gate charge, 1.7× higher fall time

AO3400A 2.3× lower gate charge, 2.2× lower fall time, 1.4× lower rise time

PMV65XPEA 5.4× higher rise time, 2.9× lower power dissipation, 2.8× lower gate charge

Si2302CDS 4.0× lower gate charge, 2.0× higher rise time, 2.0× lower input capacitance

AO3402 3.6× lower fall time, 3.1× lower reverse transfer capacitance, 2.7× lower input capacitance

2N7002-13-F 7.3× lower output capacitance, 3.8× lower power dissipation, 1.6× lower fall time

04 — FAQ

Frequently asked questions

What is the breakdown voltage (ds) of the AO3401A when ID = -250µA and VGS = 0V?

The breakdown voltage (ds) is -30 V.

What is the drain current of the AO3401A at TA = 25°C?

The drain current is -4 A at TA = 25°C.

What is the fall time of the AO3401A when VGS = -10V, VDS = -15V, RL = 3.75Ω, and RGEN = 3Ω?

The fall time is 9 ns.

What is the gate charge of the AO3401A at VGS = -10V, VDS = -15V, and ID = -4.0A?

The gate charge is 14 nC.

What is the input capacitance of the AO3401A?

The input capacitance is 645 pF at VGS = 0V, VDS = -15V, and f = 1MHz.

What is the maximum operating temperature for the AO3401A?

The maximum operating temperature is 150 °C.

What is the output capacitance of the AO3401A?

The output capacitance is 80 pF at VGS = 0V, VDS = -15V, f = 1MHz.

What is the power dissipation of the AO3401A at TA = 25°C?

The power dissipation is 1.4 W at TA = 25°C.