AOD409
Every spec below is cited to the manufacturer datasheet. Compare the closest alternatives, then ask the assistant what it means for your design.
What the AOD409 does
The AOD409/AOI409 are P-Channel Enhancement Mode Field Effect Transistors available in DPAK, IPAK, TO-252, and TO-251A packages. These devices feature a -60 V drain-source breakdown voltage, a maximum continuous drain current of -26 A, and a static drain-source on-resistance between 32 and 55 mΩ. The component includes a body diode with a reverse recovery time of 40 to 50 ns. Engineers typically select this MOSFET for high current load applications requiring excellent thermal resistance and low gate charge. The part operates across a junction temperature range of -55 to 175 °C.
Datasheet parameters
| Parameter | Min | Typ | Max | Conditions | Source |
|---|---|---|---|---|---|
| rds on | — | 43 mOhm | 55 mOhm | VGS = -4.5V, ID = -20A; rds(on); STATIC PARAMETERS | Alpha & Omega Semiconductor, Ltd. datasheet, p. 2 — P-Channel Enhancement Mode Field Effect Tra… |
| operating temperature | -55 °C | — | 175 °C | Alpha & Omega Semiconductor, Ltd. datasheet, p. 1 — P-Channel Enhancement Mode Field Effect Tra… | |
| power dissipation | — | 60 W | — | T_C = 25 °C | Alpha & Omega Semiconductor, Ltd. datasheet, p. 1 — P-Channel Enhancement Mode Field Effect Tra… |
| breakdown voltage ds | -60 V | — | — | ID = -250μA, VGS = 0V; STATIC PARAMETERS | Alpha & Omega Semiconductor, Ltd. datasheet, p. 2 — P-Channel Enhancement Mode Field Effect Tra… |
| vgs threshold | — | -1.9 V | — | VDS = VGS, ID = -250 µA | Alpha & Omega Semiconductor, Ltd. datasheet, p. 2 — P-Channel Enhancement Mode Field Effect Tra… |
| input capacitance | — | 2.98 nF | 3.6 nF | VGS = 0V, VDS = -30V, f = 1MHz; ciss; DYNAMIC PARAMETERS | Alpha & Omega Semiconductor, Ltd. datasheet, p. 2 — P-Channel Enhancement Mode Field Effect Tra… |
| output capacitance | — | 241 pF | — | VGS = 0V, VDS = -30V, f = 1MHz; coss; DYNAMIC PARAMETERS | Alpha & Omega Semiconductor, Ltd. datasheet, p. 2 — P-Channel Enhancement Mode Field Effect Tra… |
| reverse transfer capacitance | — | 153 pF | — | VGS = 0V, VDS = -30V, f = 1MHz; crss; DYNAMIC PARAMETERS | Alpha & Omega Semiconductor, Ltd. datasheet, p. 2 — P-Channel Enhancement Mode Field Effect Tra… |
| gate charge | — | 44 nC | 54 nC | VGS = -10V, VDS = -30V, ID = -20A; qg(10v); SWITCHING PARAMETERS | Alpha & Omega Semiconductor, Ltd. datasheet, p. 2 — P-Channel Enhancement Mode Field Effect Tra… |
| rise time | — | 14.5 ns | — | VGS = -10V, VDS = -30V, RL = 1.5Ω, RGEN = 3Ω; tr; SWITCHING PARAMETERS | Alpha & Omega Semiconductor, Ltd. datasheet, p. 2 — P-Channel Enhancement Mode Field Effect Tra… |
| fall time | — | 15 ns | — | VGS = -10V, VDS = -30V, RL = 1.5Ω, RGEN = 3Ω; tf; SWITCHING PARAMETERS | Alpha & Omega Semiconductor, Ltd. datasheet, p. 2 — P-Channel Enhancement Mode Field Effect Tra… |
| reverse recovery time | — | 40 ns | 50 ns | IF = -20A, di/dt = 100A/μs; trr; SWITCHING PARAMETERS | Alpha & Omega Semiconductor, Ltd. datasheet, p. 2 — P-Channel Enhancement Mode Field Effect Tra… |
Closest matches to AOD409
Frequently asked questions
What is the breakdown voltage ds for the AOD409?
The breakdown voltage ds is -60 V at ID = -250μA, VGS = 0V; STATIC PARAMETERS.
What is the fall time (tf) of the AOD409 under the conditions VGS = -10V, VDS = -30V, RL = 1.5Ω, and RGEN = 3Ω?
The fall time is 15 ns.
What is the gate charge (qg(10v)) of the AOD409 under switching parameters conditions?
The gate charge is 44 nC at VGS = -10V, VDS = -30V, and ID = -20A.
What is the input capacitance (Ciss) of the AOD409?
The input capacitance is 2.98 nF at VGS = 0V, VDS = -30V, and f = 1MHz.
What is the maximum operating temperature for the AOD409?
The maximum operating temperature is 175 °C.
What is the output capacitance (Coss) of the AOD409 under the condition VGS = 0V, VDS = -30V, f = 1MHz?
The output capacitance is 241 pF.
What is the power dissipation of the AOD409 at T_C = 25 °C?
The power dissipation is 60 W at T_C = 25 °C.
What is the rds(on) value under the condition VGS = -4.5V, ID = -20A?
The rds(on) is 43 mOhm.
What is the reverse recovery time (trr) for the AOD409 when IF = -20A and di/dt = 100A/μs?
The reverse recovery time is 40 ns.
What is the reverse transfer capacitance (Crss) of the AOD409 under the condition VGS = 0V, VDS = -30V, f = 1MHz?
The reverse transfer capacitance (Crss) is 153 pF when VGS = 0V, VDS = -30V, and f = 1MHz.
What is the rise time (tr) of the AOD409 when VGS = -10V, VDS = -30V, RL = 1.5Ω, and RGEN = 3Ω?
The rise time is 14.5 ns.
What is the VGS threshold voltage of the AOD409 when VDS = VGS and ID = -250 µA?
The VGS threshold voltage is -1.9 V.