AOD409 — Datasheet Summary, Specs & Alternatives

01 — Overview

This datasheet covers the AOD409/AOI409, P-Channel Enhancement Mode MOSFETs from Alpha & Omega Semiconductor. Designed for high current load applications, it features advanced trench technology with low on-resistance and gate charge. Key parameters include a -60V drain-source voltage rating, -26A continuous drain current, and 40°C/W junction-to-ambient thermal resistance in DPAK packages. The document details absolute maximum ratings, static and dynamic electrical characteristics, and typical performance curves across temperature.

02 — Key specifications

Datasheet parameters

Parameter	Min	Typ	Max	Conditions
rds on	—	43 mOhm	55 mOhm	VGS = -4.5V, ID = -20A
operating temperature	-55 °C	—	175 °C
power dissipation	—	60 W	—
reverse leakage current	—	-3 nA	—	VDS = -48V, VGS = 0VTJ = 55°C
breakdown voltage ds	-60 V	—	—	ID = -250μA, VGS = 0V
drain current	-60 A	—	—	VGS = -10V, VDS = -5V
vgs threshold	—	-1.9 V	—
input capacitance	—	2.98 nF	3.6 nF	VGS = 0V, VDS = -30V, f = 1MHz
output capacitance	—	241 pF	—	VGS = 0V, VDS = -30V, f = 1MHz
reverse transfer capacitance	—	153 pF	—	VGS = 0V, VDS = -30V, f = 1MHz
gate charge	—	44 nC	54 nC	VGS = -10V, VDS = -30V, ID = -20A
rise time	—	14.5 ns	—	VGS = -10V, VDS = -30V, RL = 1.5Ω, RGEN = 3Ω
fall time	—	15 ns	—	VGS = -10V, VDS = -30V, RL = 1.5Ω, RGEN = 3Ω
reverse recovery time	—	40 ns	50 ns	IF = -20A, di/dt = 100A/μs

03 — Alternatives

Closest matches to AOD409

AOD4185 3.4× lower rds on, 2.0× higher fall time, 1.5× lower breakdown voltage ds

AO3407A 4.5× lower input capacitance, 3.5× lower gate charge, 2.1× lower rise time

BUK7230-55A 4.7× higher rise time, 3.4× lower input capacitance, 2.9× higher fall time

DMP3099L-13 8.5× lower gate charge, 5.5× lower drain current, 5.3× lower input capacitance

PMV65XPEA 18.2× lower drain current, 8.8× lower gate charge, 4.8× lower input capacitance

Si2301CDS 19.4× lower drain current, 8.0× lower gate charge, 7.4× lower input capacitance

DMG1012T-13 7.0× higher rds on, 2.0× lower rise time, 1.3× lower operating temperature

AO3401A 15.0× lower drain current, 4.6× lower input capacitance, 4.1× lower rise time

04 — FAQ

Frequently asked questions

What is the breakdown voltage ds for the AOD409?

The breakdown voltage ds is -60 V when ID = -250μA and VGS = 0V.

What is the drain current of the AOD409 when VGS = -10V and VDS = -5V?

The drain current is -60 A.

What is the fall time of the AOD409 when VGS = -10V, VDS = -30V, RL = 1.5Ω, and RGEN = 3Ω?

The fall time is 15 ns.

What is the gate charge of the AOD409 at VGS = -10V, VDS = -30V, and ID = -20A?

The gate charge is 44 nC.

What is the input capacitance of the AOD409 when VGS = 0V, VDS = -30V, and f = 1MHz?

The input capacitance is 2.98 nF.

What is the maximum operating temperature for the AOD409?

The maximum operating temperature is 175 °C.

What is the output capacitance of the AOD409?

The output capacitance is 241 pF at VGS = 0V, VDS = -30V, and f = 1MHz.

What is the power dissipation of the AOD409?

The power dissipation is 60 W.