MDD3401
Every spec below is cited to the manufacturer datasheet. Pick your exact ordering code, compare the closest alternatives, then ask the assistant what it means for your design.
What the MDD3401 family does
The MDD3401 is a -30V P-Channel Enhancement Mode MOSFET available in the SOT-23 package. It features a drain-source breakdown voltage of -30V, a continuous drain current of -4.2A, and a typical on-resistance of 45mΩ at -10V gate drive. The device supports pulsed currents up to -16A and operates across a junction temperature range of -50°C to 150°C. Engineers typically use this component for load and power switching applications as well as interfacing tasks where low on-resistance and high current capability are required.
MDD3401 datasheet parameters
| Parameter | Min | Typ | Max | Conditions | Source |
|---|---|---|---|---|---|
| rds on | — | 45 mOhm | 55 mOhm | VGS = -10V, ID = -4.1A; rds(on); Marking | MDDMicro datasheet, p. 2 — Marking |
| forward voltage | — | — | -1 V | I_S = -1\text{A}, VGS = 0\text{V}; v{sd}; Source Drain Diode Characteristics | MDDMicro datasheet, p. 2 — Source Drain Diode Characteristics |
| operating temperature | -50 °C | — | 150 °C | MDDMicro datasheet, p. 1 — Marking | |
| power dissipation | — | — | 1.2 W | (note 2); Marking | MDDMicro datasheet, p. 1 — Marking |
| reverse leakage current | — | — | -1 µA | VDS = -30V, VGS = 0V; idss; Marking | MDDMicro datasheet, p. 2 — Marking |
| breakdown voltage ds | -30 V | — | — | VGS = 0V, ID = -250μA; v(br); Marking | MDDMicro datasheet, p. 2 — Marking |
| drain current | — | — | -4.2 A | continuous; Marking | MDDMicro datasheet, p. 1 — Marking |
| vgs threshold | — | -800 mV | — | MDDMicro datasheet, p. 2 — Marking | |
| input capacitance | — | 655 pF | — | VDS = -15V; ciss; Dynamic Electrical Characteristics | MDDMicro datasheet, p. 2 — Dynamic Electrical Characteristics |
| output capacitance | — | 65 pF | — | VGS = 0V; coss; Dynamic Electrical Characteristics | MDDMicro datasheet, p. 2 — Dynamic Electrical Characteristics |
| reverse transfer capacitance | — | 53 pF | — | f = 1MHz; crss; Dynamic Electrical Characteristics | MDDMicro datasheet, p. 2 — Dynamic Electrical Characteristics |
| gate charge | — | 8.5 nC | — | VDS = -15V; qg; Dynamic Electrical Characteristics | MDDMicro datasheet, p. 2 — Dynamic Electrical Characteristics |
| rise time | — | 3.8 ns | — | VGS = -10V; t; Switching Characteristics | MDDMicro datasheet, p. 2 — Switching Characteristics |
| fall time | — | 10.5 ns | — | R_G = 6\Omega; t; Switching Characteristics | MDDMicro datasheet, p. 2 — Switching Characteristics |
MDD3401 frequently asked questions
What is the breakdown voltage (ds) for the MDD3401?
The breakdown voltage (ds) is -30 V when VGS = 0V, ID = -250μA; v(br); Marking.
What is the continuous drain current for the MDD3401?
The continuous drain current is -4.2 A.
What is the fall time under the condition R_G = 6Ω?
The fall time is 10.5 ns.
What is the forward voltage of the Source Drain Diode?
The forward voltage is -1 V at I_S = -1A and VGS = 0V.
What is the gate charge (qg) of the MDD3401 when VDS = -15V?
The gate charge is 8.5 nC.
What is the input capacitance (Ciss) of the MDD3401 when VDS = -15V?
The input capacitance is 655 pF.
What is the operating temperature of the MDD3401?
The operating temperature is 150 °C.
What is the output capacitance (coss) of the MDD3401?
The output capacitance is 65 pF at VGS = 0V.
What is the power dissipation of the MDD3401 under the condition specified in note 2 (Marking)?
The power dissipation is 1.2 W.
What is the rds(on) specification for the MDD3401?
The rds(on) is 45 mOhm at VGS = -10V, ID = -4.1A; rds(on); Marking.
What is the reverse leakage current (idss) when VDS = -30V and VGS = 0V?
The reverse leakage current is -1 µA.
What is the reverse transfer capacitance (crss) of the MDD3401 at f = 1MHz?
The reverse transfer capacitance (crss) is 53 pF at f = 1MHz.