transistors thyristors

HL3415A

Every spec below is cited to the manufacturer datasheet. Pick your exact ordering code, compare the closest alternatives, then ask the assistant what it means for your design.

00 — Overview

What the HL3415A family does

The HL3415A is a P-channel MOSFET in the SOT-23 package, designed for battery-operated systems, solid-state relays, and direct logic-level interfaces. It features a drain-source voltage of -20 V, a continuous drain current of -5.6 A, and an on-resistance below 42 mΩ at -4.5 V gate drive. The device supports junction temperatures from -55 to +150 °C and includes fast switching speeds with a total gate charge of 11 nC. Its trench power technology enables efficient voltage-controlled switching for low-power applications requiring reliable performance across commercial and industrial environments.

Next step
Start building with HL3415A → Every number above is cited straight from the datasheet — ask what they mean for your design, and the assistant answers from the same source documents.
01 — Key specifications

HL3415A datasheet parameters

ParameterMinTypMaxConditionsSource
rds on 31 mOhm 42 mOhm VGS = -4.5V, ID = -5.0A; (on); ☑ Ordering Information Hongjiacheng datasheet, p. 2 — ☑ Ordering Information
forward voltage -1.2 V IS = -5.0A, VGS = 0V; ☑ Ordering Information Hongjiacheng datasheet, p. 2 — ☑ Ordering Information
operating temperature (abs max) -55 °C 150 °C Hongjiacheng datasheet, p. 1 — • Maximum Ratings (Ta=25°C Unless otherwise specified)
power dissipation (abs max) 1.3 W • Maximum Ratings (Ta = 25°C Unless otherwise specified) Hongjiacheng datasheet, p. 1 — • Maximum Ratings (Ta=25°C Unless otherwise specified)
reverse leakage current -1 µA VDS = -20V, VGS = 0V; zero; ☑ Ordering Information Hongjiacheng datasheet, p. 2 — ☑ Ordering Information
breakdown voltage ds -20 V VGS = 0V, ID = -250μA; ☑ Ordering Information Hongjiacheng datasheet, p. 2 — ☑ Ordering Information
drain current (abs max) -5.6 A TA = 25°C @ Steady State; • Maximum Ratings (Ta = 25°C Unless otherwise specified) Hongjiacheng datasheet, p. 1 — • Maximum Ratings (Ta=25°C Unless otherwise specified)
vgs threshold -620 mV Hongjiacheng datasheet, p. 2 — ☑ Ordering Information
input capacitance 1.18 nF VGS = 0VVDS = -10Vf = 1MHz; • Dynamic Parameters (Ta = 25°C Unless otherwise specified) Hongjiacheng datasheet, p. 2 — • Dynamic Parameters (Ta=25°C Unless otherwise specified)
output capacitance 125 pF VGS = 0VVDS = -10Vf = 1MHz; • Dynamic Parameters (Ta = 25°C Unless otherwise specified) Hongjiacheng datasheet, p. 2 — • Dynamic Parameters (Ta=25°C Unless otherwise specified)
reverse transfer capacitance 88 pF VGS = 0VVDS = -10Vf = 1MHz; • Dynamic Parameters (Ta = 25°C Unless otherwise specified) Hongjiacheng datasheet, p. 2 — • Dynamic Parameters (Ta=25°C Unless otherwise specified)
gate charge 11 nC VGS = -4.5VVDS = -10VID = -4.0A; • Switching Parameters (Ta = 25°C Unless otherwise specified) Hongjiacheng datasheet, p. 2 — • Switching Parameters (Ta=25°C Unless otherwise specified)
rise time 10 ns VGS = -4.5VVDS = -10VID = -1.0ARGEN = 2.5Ω; turn; • Switching Parameters (Ta = 25°C Unless otherwise specified) Hongjiacheng datasheet, p. 2 — • Switching Parameters (Ta=25°C Unless otherwise specified)
fall time 30 ns VGS = -4.5VVDS = -10VID = -1.0ARGEN = 2.5Ω; turn; • Switching Parameters (Ta = 25°C Unless otherwise specified) Hongjiacheng datasheet, p. 2 — • Switching Parameters (Ta=25°C Unless otherwise specified)
reverse recovery time 31 ns IF = -4.0Adi/dt = 100A/us; • Switching Parameters (Ta = 25°C Unless otherwise specified) Hongjiacheng datasheet, p. 2 — • Switching Parameters (Ta=25°C Unless otherwise specified)
02 — FAQ

HL3415A frequently asked questions

What is the breakdown voltage (ds) when VGS = 0V and ID = -250μA?

The breakdown voltage (ds) is -20 V.

What is the maximum drain current for the HL3415A at TA = 25°C under steady state conditions?

The maximum drain current is -5.6 A at TA = 25°C @ Steady State.

What is the fall time of the HL3415A under the condition VGS = -4.5V, VDS = -10V, ID = -1.0A, and RG = 2.5Ω?

The fall time is 30 ns.

What is the forward voltage when IS = -5.0A and VGS = 0V?

The forward voltage is -1.2 V.

What is the gate charge of the HL3415A at VGS = -4.5V, VDS = -10V, and ID = -4.0A?

The gate charge is 11 nC.

What is the input capacitance of the HL3415A?

The input capacitance is 1.18 nF at VGS = 0V, VDS = -10V, and f = 1MHz.

What is the maximum operating temperature for the HL3415A?

The operating temperature is 150 °C.

What is the output capacitance of the HL3415A at VGS = 0V, VDS = -10V, and f = 1MHz?

The output capacitance is 125 pF.

What is the maximum power dissipation of the HL3415A at Ta = 25°C?

The maximum power dissipation is 1.3 W.

What is the maximum on-resistance (rds on) for the HL3415A?

The on-resistance is 31 mOhm at VGS = -4.5V and ID = -5.0A.

What is the reverse leakage current?

The reverse leakage current is -1 µA at VDS = -20V and VGS = 0V.

What is the reverse recovery time of the HL3415A at Ta = 25°C with IF = -4.0A and di/dt = 100A/us?

The reverse recovery time is 31 ns.

03 — Alternatives

Closest matches to HL3415A

HL6042 1.6× lower input capacitance, 1.4× higher rds on, 1.3× higher drain current
AO3407A 3.2× higher vgs threshold, 3.0× lower fall time, 1.8× lower input capacitance
MDD3401 5.5× lower drain current, 2.9× lower fall time, 2.6× lower rise time
MDD2301 6.1× lower drain current, 3.6× lower input capacitance, 2.5× lower output capacitance
HL3401A 3.7× lower power dissipation, 2.7× higher gate charge, 1.6× higher rds on
HL2300 2.8× lower input capacitance, 2.0× higher rise time, 1.8× lower gate charge
Si2301CDS 7.4× lower drain current, 3.5× higher rise time, 3.0× lower fall time
PMV65XPEA 7.0× lower drain current, 2.7× lower power dissipation, 2.2× lower gate charge
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