HL2301A
Every spec below is cited to the manufacturer datasheet. Pick your exact ordering code, compare the closest alternatives, then ask the assistant what it means for your design.
What the HL2301A family does
The HL2301A is a P-channel MOSFET in the SOT-23 package featuring trench power LV technology. It handles a drain-source voltage of -20 V, supports a continuous drain current of -2.3 A, and maintains an on-resistance below 112 mΩ at -4.5 V gate drive. The device switches at high speed with a total gate charge of 6 nC and a reverse recovery time under 13.1 ns. Engineers typically use this component in battery-operated systems, solid-state relays, and direct logic-level interfaces for TTL or CMOS applications. It operates across a junction temperature range of -55 to +150 °C.
HL2301A datasheet parameters
| Parameter | Min | Typ | Max | Conditions | Source |
|---|---|---|---|---|---|
| rds on | — | 90 mOhm | 112 mOhm | VGS = -4.5V, ID = -2.8A; (on); ☑ Ordering Information | Hongjiacheng datasheet, p. 2 — ☑ Ordering Information |
| operating temperature (abs max) | -55 °C | — | 150 °C | Hongjiacheng datasheet, p. 1 — • Maximum Ratings (Ta=25°C Unless otherwise specified) | |
| power dissipation (abs max) | — | — | 700 mW | • Maximum Ratings (Ta = 25°C Unless otherwise specified) | Hongjiacheng datasheet, p. 1 — • Maximum Ratings (Ta=25°C Unless otherwise specified) |
| reverse leakage current | — | — | -1 µA | VDS = -20V, VGS = 0V; zero; ☑ Ordering Information | Hongjiacheng datasheet, p. 2 — ☑ Ordering Information |
| breakdown voltage ds | -20 V | — | — | VGS = 0V, ID = -250μA; ☑ Ordering Information | Hongjiacheng datasheet, p. 2 — ☑ Ordering Information |
| drain current (abs max) | — | — | -2.3 A | TA = 25°C @ Steady State; • Maximum Ratings (Ta = 25°C Unless otherwise specified) | Hongjiacheng datasheet, p. 1 — • Maximum Ratings (Ta=25°C Unless otherwise specified) |
| vgs threshold | — | -700 mV | — | Hongjiacheng datasheet, p. 2 — ☑ Ordering Information | |
| input capacitance | — | 405 pF | — | VDS = -10VVGS = 0Vf = 1MHZ; • Dynamic Parameters (Ta = 25°C Unless otherwise specified) | Hongjiacheng datasheet, p. 2 — • Dynamic Parameters (Ta=25°C Unless otherwise specified) |
| output capacitance | — | 75 pF | — | VDS = -10VVGS = 0Vf = 1MHZ; • Dynamic Parameters (Ta = 25°C Unless otherwise specified) | Hongjiacheng datasheet, p. 2 — • Dynamic Parameters (Ta=25°C Unless otherwise specified) |
| reverse transfer capacitance | — | 55 pF | — | VDS = -10VVGS = 0Vf = 1MHZ; • Dynamic Parameters (Ta = 25°C Unless otherwise specified) | Hongjiacheng datasheet, p. 2 — • Dynamic Parameters (Ta=25°C Unless otherwise specified) |
| gate charge | — | 5.5 nC | 10 nC | VGS = -4.5V, VDS = -10V, ID = -2.3A; • Switching Parameters (Ta = 25°C Unless otherwise specified) | Hongjiacheng datasheet, p. 2 — • Switching Parameters (Ta=25°C Unless otherwise specified) |
| rise time | — | 35 ns | 60 ns | VGS = -4.5V, VDS = -10V, ID = -1ARGEN = 1Ω; turn; • Switching Parameters (Ta = 25°C Unless otherwise specified) | Hongjiacheng datasheet, p. 2 — • Switching Parameters (Ta=25°C Unless otherwise specified) |
| fall time | — | 10 ns | 20 ns | VGS = -4.5V, VDS = -10V, ID = -1ARGEN = 1Ω; turn; • Switching Parameters (Ta = 25°C Unless otherwise specified) | Hongjiacheng datasheet, p. 2 — • Switching Parameters (Ta=25°C Unless otherwise specified) |
| reverse recovery time | — | 13.1 ns | — | IF = -2.3A, di/dt = 100A/us; • Switching Parameters (Ta = 25°C Unless otherwise specified) | Hongjiacheng datasheet, p. 2 — • Switching Parameters (Ta=25°C Unless otherwise specified) |