MDD2301
Every spec below is cited to the manufacturer datasheet. Pick your exact ordering code, compare the closest alternatives, then ask the assistant what it means for your design.
What the MDD2301 family does
The MDD2301 is a -20V P-Channel Enhancement Mode MOSFET available in the SOT-23 package. It features a typical drain-source on-state resistance of 33 mΩ at 4.5V, a continuous drain current of -3.8A, and a maximum power dissipation of 1.2W. The device includes a body diode with a forward voltage of -0.85V at -2A. Engineers typically use this component as a load switch for portable devices or within DC/DC converter circuits. It operates across a junction temperature range of -50 to 150°C.
MDD2301 datasheet parameters
| Parameter | Min | Typ | Max | Conditions | Source |
|---|---|---|---|---|---|
| rds on | — | 33 mOhm | 45 mOhm | VGS = -4.5V, ID = -3A; rds(on); Ta = 25℃ unless otherwise specified | MDDMicro datasheet, p. 2 — Ta = 25℃ unless otherwise specified |
| operating temperature | -50 °C | — | 150 °C | MDDMicro datasheet, p. 1 — Marking | |
| power dissipation | — | — | 1.2 W | (note 2); Marking | MDDMicro datasheet, p. 1 — Marking |
| reverse leakage current | — | — | -1 µA | VDS = -20V, VGS = 0V; idss; Ta = 25℃ unless otherwise specified | MDDMicro datasheet, p. 2 — Ta = 25℃ unless otherwise specified |
| breakdown voltage ds | -20 V | — | — | VGS = 0V, ID = 250μA; v(br); Ta = 25℃ unless otherwise specified | MDDMicro datasheet, p. 2 — Ta = 25℃ unless otherwise specified |
| drain current | — | — | -3.8 A | continuous; Marking | MDDMicro datasheet, p. 1 — Marking |
| vgs threshold | — | -700 mV | — | MDDMicro datasheet, p. 2 — Ta = 25℃ unless otherwise specified | |
| input capacitance | — | 330 pF | — | VDS = -10VVGS = 0Vf = 1MHz; ciss; Dynamic Electrical Characteristics | MDDMicro datasheet, p. 2 — Dynamic Electrical Characteristics |
| output capacitance | — | 50 pF | — | VDS = -10VVGS = 0Vf = 1MHz; coss; Dynamic Electrical Characteristics | MDDMicro datasheet, p. 2 — Dynamic Electrical Characteristics |
| reverse transfer capacitance | — | 45 pF | — | VDS = -10VVGS = 0Vf = 1MHz; crss; Dynamic Electrical Characteristics | MDDMicro datasheet, p. 2 — Dynamic Electrical Characteristics |
| gate charge | — | 6.6 nC | — | VDS = -10VVGS = -2.5VID = -3A; qg; Dynamic Electrical Characteristics | MDDMicro datasheet, p. 2 — Dynamic Electrical Characteristics |
| rise time | — | 12 ns | — | VDS = -10VVGS = -4.5VID = -3AR G = 3.3\OmegaR_L = 10\Omega; t; Switching Characteristics | MDDMicro datasheet, p. 2 — Switching Characteristics |
| fall time | — | 30 ns | — | VDS = -10VVGS = -4.5VID = -3AR G = 3.3\OmegaR_L = 10\Omega; t; Switching Characteristics | MDDMicro datasheet, p. 2 — Switching Characteristics |
MDD2301 frequently asked questions
What is the breakdown voltage (ds) of the MDD2301?
The breakdown voltage (ds) is -20 V at VGS = 0V, ID = 250μA, and Ta = 25℃ unless otherwise specified.
What is the continuous drain current for the MDD2301?
The continuous drain current is -3.8 A.
What is the fall time of the MDD2301 when VDS = -10V, VGS = -4.5V, ID = -3A, RG = 3.3Ω, and RL = 10Ω?
The fall time is 30 ns.
What is the gate charge (qg) of the MDD2301 under the conditions VDS = -10V, VGS = -2.5V, and ID = -3A?
The gate charge is 6.6 nC.
What is the input capacitance (Ciss) of the MDD2301 under the conditions VDS = -10V, VGS = 0V, and f = 1MHz?
The input capacitance is 330 pF.
What is the operating temperature of the MDD2301?
The operating temperature is 150 °C.
What is the output capacitance (coss) of the MDD2301?
The output capacitance is 50 pF at VDS = -10V, VGS = 0V, and f = 1MHz.
What is the power dissipation under the condition of (note 2); Marking?
The power dissipation is 1.2 W.
What is the rds(on) specification for the MDD2301?
The rds(on) is 33 mOhm at VGS = -4.5V, ID = -3A, with Ta = 25℃ unless otherwise specified.
What is the reverse leakage current (idss) for the MDD2301?
The reverse leakage current is -1 µA at VDS = -20V, VGS = 0V and Ta = 25℃ unless otherwise specified.
What is the reverse transfer capacitance (crss) of the MDD2301 when VDS = -10V, VGS = 0V, and f = 1MHz?
The reverse transfer capacitance (crss) is 45 pF.
What is the rise time of the MDD2301 under switching characteristics conditions?
The rise time is 12 ns when VDS = -10V, VGS = -4.5V, ID = -3A, RG = 3.3Ω, and RL = 10Ω.