HL6042
Every spec below is cited to the manufacturer datasheet. Pick your exact ordering code, compare the closest alternatives, then ask the assistant what it means for your design.
What the HL6042 family does
The HL6042 is a P-channel MOSFET in the SOT-23 package, designed for battery-operated systems, solid-state relays, and direct logic-level interfaces. It features a drain-source voltage of -20 V, a continuous drain current of -5.0 A, and an on-resistance below 43 mΩ at -4.5 V gate drive. The device supports junction temperatures from -55 to +150 °C and includes a fast-switching body diode. Its low gate charge and trench power technology enable efficient switching for TTL and CMOS applications.
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Every number above is cited straight from the datasheet — ask what they mean for your design, and the assistant answers from the same source documents.
HL6042 datasheet parameters
| Parameter | Min | Typ | Max | Conditions | Source |
|---|---|---|---|---|---|
| rds on | — | — | 43 mOhm | VGS = -4.5V, ID = -4.0A; (on); ☑ Ordering Information | Hongjiacheng datasheet, p. 2 — ☑ Ordering Information |
| forward voltage | — | — | -1 V | IS = -1.0A, VGS = 0V; ☑ Ordering Information | Hongjiacheng datasheet, p. 2 — ☑ Ordering Information |
| operating temperature (abs max) | -55 °C | — | 150 °C | Junction and Storage Temperature Range | Hongjiacheng datasheet, p. 1 — • Maximum Ratings (Ta=25°C Unless otherwise specified) |
| power dissipation (abs max) | — | — | 1.5 W | • Maximum Ratings (Ta = 25°C Unless otherwise specified) | Hongjiacheng datasheet, p. 1 — • Maximum Ratings (Ta=25°C Unless otherwise specified) |
| reverse leakage current | — | — | -1 µA | VDS = -20V, VGS = 0V; zero; ☑ Ordering Information | Hongjiacheng datasheet, p. 2 — ☑ Ordering Information |
| breakdown voltage ds | -20 V | — | — | VGS = 0V, ID = -250µA; ☑ Ordering Information | Hongjiacheng datasheet, p. 2 — ☑ Ordering Information |
| drain current (abs max) | — | — | -5 A | TA = 25°C @ Steady State; • Maximum Ratings (Ta = 25°C Unless otherwise specified) | Hongjiacheng datasheet, p. 1 — • Maximum Ratings (Ta=25°C Unless otherwise specified) |
| vgs threshold | -900 mV | — | -300 mV | VDS = VGS, ID = -250µA | Hongjiacheng datasheet, p. 2 — ☑ Ordering Information |
| input capacitance | 600 pF | — | 905 pF | VDS = -10VVGS = -10Vf = 1MHZ; • Dynamic Parameters (Ta = 25°C Unless otherwise specified) | Hongjiacheng datasheet, p. 2 — • Dynamic Parameters (Ta=25°C Unless otherwise specified) |
| output capacitance | 80 pF | — | 150 pF | VDS = -10VVGS = -10Vf = 1MHZ; • Dynamic Parameters (Ta = 25°C Unless otherwise specified) | Hongjiacheng datasheet, p. 2 — • Dynamic Parameters (Ta=25°C Unless otherwise specified) |
| reverse transfer capacitance | 48 pF | — | 115 pF | VDS = -10VVGS = -10Vf = 1MHZ; • Dynamic Parameters (Ta = 25°C Unless otherwise specified) | Hongjiacheng datasheet, p. 2 — • Dynamic Parameters (Ta=25°C Unless otherwise specified) |
| gate charge | 7.4 nC | — | 11 nC | VGS = -4.5VVDS = -10VID = -4.0A; • Switching Parameters (Ta = 25°C Unless otherwise specified) | Hongjiacheng datasheet, p. 2 — • Switching Parameters (Ta=25°C Unless otherwise specified) |
| rise time | — | 9 ns | — | VGS = -4.5V, VDS = 10VRL = 2.5Ω, RGEN = 3.0Ω; turn; • Switching Parameters (Ta = 25°C Unless otherwise specified) | Hongjiacheng datasheet, p. 2 — • Switching Parameters (Ta=25°C Unless otherwise specified) |
| fall time | — | 29 ns | — | VGS = -4.5V, VDS = 10VRL = 2.5Ω, RGEN = 3.0Ω; turn; • Switching Parameters (Ta = 25°C Unless otherwise specified) | Hongjiacheng datasheet, p. 2 — • Switching Parameters (Ta=25°C Unless otherwise specified) |
| reverse recovery time | 20 ns | — | 32 ns | IF = -4.0Adi/dt = 100A/μs; • Switching Parameters (Ta = 25°C Unless otherwise specified) | Hongjiacheng datasheet, p. 2 — • Switching Parameters (Ta=25°C Unless otherwise specified) |
Closest matches to HL6042
HL3415A
1.6× higher input capacitance, 1.4× lower rds on, 1.3× lower drain current
AO3407A
3.3× higher vgs threshold, 2.9× lower fall time, 1.5× higher breakdown voltage ds
DMP3099L
2.7× lower drain current, 2.6× higher vgs threshold, 2.4× lower output capacitance
MDD3401
7.1× lower drain current, 2.8× lower fall time, 2.4× lower rise time
Si2301CDS
9.7× lower drain current, 3.9× higher rise time, 2.9× lower fall time
MDD2301
7.9× lower drain current, 2.3× lower output capacitance, 2.3× lower input capacitance
PMV65XPEA
9.1× lower drain current, 3.1× lower power dissipation, 2.1× higher rise time
HL3401A
4.3× lower power dissipation, 3.3× higher gate charge, 1.5× higher breakdown voltage ds
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