transistors-thyristors

IRL3713

Full part number: IRL3713LPbF

Key datasheet specifications and the closest alternatives, ranked by parametric similarity and grounded in the manufacturer datasheet.

01 — Overview

This datasheet covers the IRL3713 series of HEXFET Power MOSFETs, available in TO-220, D2Pak, and TO-262 packages. Designed for high-frequency isolated DC-DC converters and synchronous rectification in telecom or industrial applications, these devices offer ultra-low gate impedance and 100% tested avalanche characteristics. Key parameters include a 30V drain-source voltage rating, 260A continuous drain current at 25°C, and a typical on-resistance of 3.3 mΩ at 4.5V gate drive. The document also details thermal resistance values and body diode specifications for efficient switching performance.

02 — Key specifications

Datasheet parameters

ParameterMinTypMaxConditions
rds on — 2.6 mOhm 3 mOhm mΩ
operating temperature -55 °C — 175 °C
power dissipation — 330 W —
reverse leakage current — — 50 µA µA
breakdown voltage ds 30 V — — V
drain current — 260 A —
vgs threshold 1 V — 2.5 V V
input capacitance — 5.89 nF —
output capacitance — 3.13 nF —
reverse transfer capacitance — 630 pF —
gate charge — 75 nC —
collector emitter voltage — 30 V —
03 — Alternatives

Closest matches to IRL3713

BSS138L 1.8× lower vgs threshold, 1.7× higher breakdown voltage ds, 1.7× higher collector emitter voltage
2N7002 2.0× higher breakdown voltage ds, 2.0× higher collector emitter voltage, 1.4× lower operating temperature
2N7002K 2.0× higher breakdown voltage ds, 2.0× higher collector emitter voltage, 1.3× lower operating temperature
AO3402 7.5× lower gate charge, 3.3× lower reverse leakage current, 1.8× lower vgs threshold
BUK7230-55A 14.4× lower output capacitance, 10.0× higher rds on, 6.8× lower drain current
DMG1012T-13 2.3× lower vgs threshold, 1.5× lower breakdown voltage ds, 1.5× lower collector emitter voltage
DMG2302UK 5.0× lower reverse leakage current, 2.9× lower vgs threshold, 1.5× lower breakdown voltage ds
Si2302CDS 18.1× lower input capacitance, 17.3× higher rds on, 15.8× lower reverse transfer capacitance
04 — FAQ

Frequently asked questions

What is the breakdown voltage ds of the IRL3713LPbF?

The breakdown voltage ds is 30 V at V.

What is the collector-emitter voltage?

The collector-emitter voltage is 30 V.

What is the drain current of the IRL3713LPbF?

The drain current is 260 A.

What is the gate charge of the IRL3713LPbF?

The gate charge is 75 nC.

What is the input capacitance of the IRL3713LPbF?

The input capacitance is 5.89 nF.

What is the maximum operating temperature for the IRL3713LPbF?

The maximum operating temperature is 175 °C.

What is the output capacitance of the IRL3713LPbF?

The output capacitance is 3.13 nF.

What is the power dissipation of the IRL3713LPbF?

The power dissipation is 330 W.

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