Build with 2N7002K — Datasheet Specs & AI Design Help

00 — Overview

What the 2N7002K does

The 2N7002K is an N-channel enhancement mode MOSFET designed for high-efficiency power management, motor controls, and backlighting. It spans variants with 3,000 or 10,000 units per reel in SOT23 packages. Key parameters include a 60 V drain-source breakdown voltage, 380 mA continuous drain current, and 2 Ω on-resistance at 10 V gate drive. The device features fast switching speeds, low input capacitance, and ESD protection up to 2 kV. It operates from -55 to +150 °C and is fully RoHS compliant with lead-free construction. This component minimizes on-state resistance while maintaining superior switching performance for automotive and industrial applications.

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Start building with 2N7002K → Every number above is cited straight from the datasheet — ask what they mean for your design, and the assistant answers from the same source documents.

01 — Key specifications

Datasheet parameters

Datasheet parameters for 2N7002K
Parameter	Min	Typ	Max	Conditions	Source
rds on	—	1.2 Ohm	2 Ohm	VGS = 10V, ID = 0.5A; (on); ON CHARACTERISTICS (Note 7)	Diodes datasheet, p. 3 — Marking Information
forward voltage	—	750 mV	1.1 V	VGS = 0V, IS = 115mA; ON CHARACTERISTICS (Note 7)	Diodes datasheet, p. 3 — Marking Information
operating temperature	-55 °C	—	150 °C		Diodes datasheet, p. 2 — Marking Information
power dissipation	—	—	350 mW	T_A = 25\text{ }^\circ\text{C}; APPLICATIONS	Vishay datasheet, p. 1 — APPLICATIONS
reverse leakage current	—	—	1 µA	VDS = 60V, VGS = 0V; zero; OFF CHARACTERISTICS (Note 7)	Diodes datasheet, p. 3 — Marking Information
breakdown voltage ds	—	—	60 V	Marking Information	Diodes datasheet, p. 2 — Marking Information
drain current	—	380 mA	—	ID Max at TA = +25°C, VGS = 10V	Diodes datasheet, p. 1 — Product Summary
vgs threshold	1 V	1.6 V	2.5 V	VDS = 10V, ID = 1mA; gate(th); ON CHARACTERISTICS (Note 7)	Diodes datasheet, p. 3 — Marking Information
input capacitance	—	30 pF	50 pF	VDS = 25V, VGS = 0Vf = 1.0MHz; DYNAMIC CHARACTERISTICS (Note 8)	Diodes datasheet, p. 3 — Marking Information
output capacitance	—	4.2 pF	25 pF	VDS = 25V, VGS = 0Vf = 1.0MHz; DYNAMIC CHARACTERISTICS (Note 8)	Diodes datasheet, p. 3 — Marking Information
reverse transfer capacitance	—	2.9 pF	5 pF	VDS = 25V, VGS = 0Vf = 1.0MHz; DYNAMIC CHARACTERISTICS (Note 8)	Diodes datasheet, p. 3 — Marking Information
gate charge	—	400 pC	600 pC	VDS = 10 V, VGS = 4.5 VID≅ 250 mA; Dynamica	Vishay datasheet, p. 2 — Vishay Siliconix
rise time	—	3.4 ns	—	VDD = 30V, VGS = 10V, RG = 25Ω, ID = 200mA; turn; DYNAMIC CHARACTERISTICS (Note 8)	Diodes datasheet, p. 3 — Marking Information
fall time	—	9.9 ns	—	VDD = 30V, VGS = 10V, RG = 25Ω, ID = 200mA; turn; DYNAMIC CHARACTERISTICS (Note 8)	Diodes datasheet, p. 3 — Marking Information

02 — Alternatives

Closest matches to 2N7002K

2N7002K-T1 similar breakdown voltage ds, similar drain current, similar fall time

2N7002 2.3× higher rds on, 2.2× higher power dissipation, 1.8× lower fall time

BSS138PS 2.5× lower fall time, 2.4× higher gate charge, 1.7× higher output capacitance

RK7002BM 2.8× higher fall time, 2.0× lower input capacitance, 1.6× higher forward voltage

T2N7002BK 3.2× higher operating temperature, 2.2× lower reverse transfer capacitance, 1.7× higher fall time

BSS123 10.0× lower reverse leakage current, 5.0× higher rds on, 4.7× higher gate charge

BSS138W 5.3× higher rise time, 3.1× higher output capacitance, 2.9× higher rds on

FDV301N 3.2× higher rds on, 3.2× lower input capacitance, 3.1× higher rise time

03 — FAQ

Frequently asked questions

What is the breakdown voltage ds for the 2N7002K?

The breakdown voltage ds is 60 V under Marking Information.

What is the maximum drain current (ID Max) at TA = +25°C with VGS = 10V?

The maximum drain current is 380 mA.

What is the fall time of the 2N7002K under dynamic characteristics conditions?

The fall time is 9.9 ns when VDD = 30V, VGS = 10V, RG = 25Ω, and ID = 200mA.

What is the forward voltage when VGS = 0V and IS = 115mA?

The forward voltage is 750 mV under the condition VGS = 0V, IS = 115mA; ON CHARACTERISTICS (Note 7).

What is the gate charge of the 2N7002K when VDS = 10 V, VGS = 4.5 V, and ID = 250 mA?

The gate charge is 400 pC.

What is the input capacitance of the 2N7002K?

The input capacitance is 30 pF at VDS = 25V, VGS = 0V, and f = 1.0MHz under DYNAMIC CHARACTERISTICS (Note 8).

What is the maximum operating temperature for the 2N7002K?

The maximum operating temperature is 150 °C.

What is the output capacitance of the 2N7002K?

The output capacitance is 4.2 pF at VDS = 25V, VGS = 0V, and f = 1.0MHz.

What is the power dissipation of the 2N7002K at T_A = 25°C?

The power dissipation is 350 mW at T_A = 25°C.

What is the maximum on-resistance (rds on) for the 2N7002K at VGS = 10V and ID = 0.5A?

The on-resistance (rds on) is 1.2 Ohm at VGS = 10V, ID = 0.5A.

What is the reverse leakage current of the 2N7002K when VDS = 60V and VGS = 0V?

The reverse leakage current is 1 µA at VDS = 60V, VGS = 0V under zero OFF CHARACTERISTICS (Note 7).

What is the reverse transfer capacitance of the 2N7002K?

The reverse transfer capacitance is 2.9 pF at VDS = 25V, VGS = 0V, and f = 1.0MHz.