2N7002K — Datasheet Summary, Specs & Alternatives

01 — Overview

This datasheet covers the 2N7002K, an N-channel enhancement mode MOSFET in a SOT23 package. It is designed for high-efficiency power management, motor controls, and backlighting applications requiring low on-resistance and fast switching. Key parameters include a maximum drain-source breakdown voltage of 60V, typical on-resistance of 1.4Ω at 5V gate drive, and a continuous drain current up to 380mA. The device features low input capacitance, ESD protection up to 2kV, and is fully RoHS compliant with lead-free materials.

02 — Key specifications

Datasheet parameters

Parameter	Min	Typ	Max	Conditions
rds on	—	1.2 Ohm	2 Ohm	VGS = 10V, ID = 0.5A
forward voltage	—	750 mV	1.1 V	VGS = 0V, IS = 115mA
operating temperature	-55 °C	—	150 °C
power dissipation	—	—	370 mW	mW
reverse leakage current	—	—	1 µA	VDS = 60V, VGS = 0V
breakdown voltage ds	—	—	60 V
drain current	—	380 mA	—
vgs threshold	1 V	1.6 V	2.5 V	VDS = 10V, ID = 1mA
input capacitance	—	30 pF	50 pF	VDS = 25V, VGS = 0Vf = 1.0MHz
output capacitance	—	4.2 pF	25 pF	VDS = 25V, VGS = 0Vf = 1.0MHz
reverse transfer capacitance	—	2.9 pF	5 pF	VDS = 25V, VGS = 0Vf = 1.0MHz
gate charge	—	300 pC	—	VGS = 4.5V, VDS = 10V, ID = 250mA
rise time	—	3.4 ns	—	VDD = 30V, VGS = 10V, RG = 25Ω, ID = 200mA
fall time	—	9.9 ns	—	VDD = 30V, VGS = 10V, RG = 25Ω, ID = 200mA
collector emitter voltage	—	60 V	—

03 — Alternatives

Closest matches to 2N7002K

RK7002BM 2.8× higher fall time, 2.0× lower input capacitance, 1.6× higher forward voltage

T2N7002BK 2.2× lower reverse transfer capacitance, 1.7× higher fall time, 1.3× higher output capacitance

2N7002K-T1 1.7× higher forward voltage, 1.7× higher rds on, 1.4× higher output capacitance

2N7002-13-F 2.7× higher rds on, 2.6× higher drain current, 2.6× higher output capacitance

BSS138PS 2.5× lower fall time, 2.4× higher gate charge, 1.7× higher output capacitance

2N7002 5.7× higher gate charge, 2.3× higher rds on, 2.2× higher power dissipation

BSS138-7-F 6.0× higher output capacitance, 2.8× higher reverse transfer capacitance, 2.0× lower reverse leakage current

FDV303N 6.7× higher output capacitance, 3.9× higher rise time, 3.6× lower rds on

04 — FAQ

Frequently asked questions

What is the breakdown voltage ds for the 2N7002K?

The breakdown voltage ds is 60 V.

What is the collector-emitter voltage of the 2N7002K?

The collector-emitter voltage is 60 V.

What is the maximum drain current for the 2N7002K?

The maximum drain current is 380 mA.

What is the fall time of the 2N7002K?

The fall time is 9.9 ns when VDD = 30V, VGS = 10V, RG = 25Ω, and ID = 200mA.

What is the forward voltage when VGS = 0V and IS = 115mA?

The forward voltage is 750 mV.

What is the gate charge of the 2N7002K when VGS = 4.5V, VDS = 10V, and ID = 250mA?

The gate charge is 300 pC.

What is the input capacitance of the 2N7002K?

The input capacitance is 30 pF at VDS = 25V, VGS = 0V, and f = 1.0MHz.

What is the maximum operating temperature for the 2N7002K?

The maximum operating temperature is 150 °C.