Build with 2N7002 — Datasheet Specs & AI Design Help

00 — Overview

What the 2N7002 does

The 2N7002 is an N-channel enhancement mode MOSFET designed for high-efficiency power management. It features a 60 V drain-source breakdown voltage, 210 mA continuous drain current at 25°C, and 5 Ω on-resistance at 10 V gate drive. The device offers fast switching speeds with low input capacitance, making it ideal for motor controls and general power-management functions. Available in a small SOT23 surface-mount package, this lead-free component supports operating temperatures from -55°C to +150°C and meets automotive compliance standards.

Next step

Start building with 2N7002 → Every number above is cited straight from the datasheet — ask what they mean for your design, and the assistant answers from the same source documents.

01 — Key specifications

Datasheet parameters

Datasheet parameters for 2N7002
Parameter	Min	Typ	Max	Conditions	Source
rds on	—	2.8 Ohm	5 Ohm	VGS = 10 V; ID = 500 mA; Tj = 25 °C; seeFigure 6; seeFigure 8; rdson; Static characteristics	Nexperia datasheet, p. 5 — Table 7. Characteristics
operating temperature	-55 °C	—	150 °C		Diodes datasheet, p. 2 — Marking Information
power dissipation	—	—	830 mW	Tsp = 25 °C; seeFigure 2; ptot; Quick reference data	Nexperia datasheet, p. 1 — Table 1. Quick reference data
reverse leakage current	—	10 nA	1 µA	VDS = 48 V; VGS = 0 V; Tj = 25 °C; idss; Static characteristics	Nexperia datasheet, p. 5 — Table 7. Characteristics
breakdown voltage ds	60 V	70 V	—	VGS = 0V, ID = 10µA; OFF CHARACTERISTICS (Note 7)	Diodes datasheet, p. 2 — Marking Information
drain current	500 mA	1 A	—	VGS = 10V, VDS = 7.5V; (on); ON CHARACTERISTICS (Note 7)	Diodes datasheet, p. 2 — Marking Information
vgs threshold	1 V	1.5 V	2.5 V	VDS = VGS, ID = 250µA; gate(th); Static Parameter	Yangjie datasheet, p. 2 — ☑ Ordering Information (Example)
input capacitance	—	31 pF	50 pF	VDS = 10 V; f = 1 MHz; VGS = 0 V; Tj = 25 °C; ciss; Dynamic characteristics	Nexperia datasheet, p. 5 — Table 7. Characteristics
output capacitance	—	6.8 pF	30 pF	coss; Dynamic characteristics	Nexperia datasheet, p. 5 — Table 7. Characteristics
reverse transfer capacitance	—	3.5 pF	10 pF	crss; Dynamic characteristics	Nexperia datasheet, p. 5 — Table 7. Characteristics
gate charge	—	1.7 nC	2.4 nC	VGS = 10V, VDS = 30V, ID = 0.3A; Switching Parameters	Yangjie datasheet, p. 2 — ☑ Ordering Information (Example)
rise time	—	3 ns	—	VDD = 30V, ID = 0.2ARL = 150Ω, VGEN = 10VRGEN = 25Ω; turn; DYNAMIC CHARACTERISTICS (Note 8)	Diodes datasheet, p. 2 — Marking Information
fall time	—	5.6 ns	—	VDD = 30V, ID = 0.2ARL = 150Ω, VGEN = 10VRGEN = 25Ω; turn; DYNAMIC CHARACTERISTICS (Note 8)	Diodes datasheet, p. 2 — Marking Information
reverse recovery time	—	30 ns	—	VGS = 0V, IS = 300mA, VR = 25V, dIS/dt = -100A/µs; Switching Parameters	Yangjie datasheet, p. 2 — ☑ Ordering Information (Example)
emitter base voltage (abs max)	—	—	30 V	gate-source voltage VGS	Nexperia datasheet, p. 2 — Table 5. Limiting values

02 — Alternatives

Closest matches to 2N7002

2N7002K 2.3× lower rds on, 2.2× lower power dissipation, 1.8× higher fall time

2N7002K-T1 2.3× lower rds on, 2.2× lower power dissipation, 1.8× higher fall time

BSS138PS 3.2× higher gate charge, 3.1× lower rds on, 3.0× lower power dissipation

BSS138W 6.0× higher rise time, 2.8× lower power dissipation, 2.5× higher fall time

BSS123 10.0× lower reverse leakage current, 6.3× higher gate charge, 2.9× higher fall time

RK7002BM 5.0× higher fall time, 2.4× lower power dissipation, 2.1× lower input capacitance

AO3400A 19.0× higher drain current, 14.3× higher reverse transfer capacitance, 11.0× higher output capacitance

HL2310A 8.0× higher input capacitance, 5.6× higher reverse transfer capacitance, 5.0× higher output capacitance

03 — FAQ

Frequently asked questions

What is the breakdown voltage ds for the 2N7002?

The breakdown voltage ds is 70 V at VGS = 0V, ID = 10µA; OFF CHARACTERISTICS (Note 7).

What is the drain current of the 2N7002 when VGS = 10V and VDS = 7.5V?

The drain current is 1 A under the condition VGS = 10V, VDS = 7.5V; (on); ON CHARACTERISTICS (Note 7).

What is the emitter base voltage when the gate-source voltage VGS is applied?

The emitter base voltage is 30 V.

What is the fall time of the 2N7002 under dynamic characteristics conditions?

The fall time is 5.6 ns when VDD = 30V, ID = 0.2A, RL = 150Ω, VGEN = 10V, and RGEN = 25Ω.

What is the gate charge of the 2N7002 under switching parameters with VGS = 10V, VDS = 30V, and ID = 0.3A?

The gate charge is 1.7 nC.

What is the input capacitance (Ciss) of the 2N7002 at VDS = 10 V, f = 1 MHz, VGS = 0 V, and Tj = 25 °C?

The input capacitance is 31 pF.

What is the maximum operating temperature for the 2N7002?

The maximum operating temperature is 150 °C.

What is the output capacitance (coss) under dynamic characteristics?

The output capacitance (coss) under dynamic characteristics is 6.8 pF.

What is the power dissipation of the 2N7002?

The power dissipation is 830 mW at Tsp = 25 °C; seeFigure 2; ptot; Quick reference data.

What is the maximum on-resistance (rds on) of the 2N7002?

The on-resistance is 2.8 Ohm at VGS = 10 V, ID = 500 mA, and Tj = 25 °C.

What is the reverse leakage current (idss) for the 2N7002?

The reverse leakage current is 10 nA at VDS = 48 V, VGS = 0 V, and Tj = 25 °C.

What is the reverse recovery time for the 2N7002 under the condition VGS = 0V, IS = 300mA, VR = 25V, dIS/dt = -100A/µs?

The reverse recovery time is 30 ns.