2N7002 — Datasheet Summary, Specs & Alternatives

01 — Overview

This Nexperia datasheet covers the 2N7002, a 60 V, 300 mA N-channel Trench MOSFET in an SOT23 package. It defines electrical limits and applications for logic-level gate drive, translators, and high-speed line drivers. Key parameters include a maximum drain-source voltage of 60 V, continuous drain current of 300 mA, on-state resistance between 2.8 and 5 ohms, total power dissipation up to 0.83 W, and junction temperature tolerance from -65 to 150 degrees Celsius.

02 — Key specifications

Datasheet parameters

Parameter	Min	Typ	Max	Conditions
rds on	—	2.8 Ohm	5 Ohm	VGS = 10 V; ID = 500 mA; Tj = 25 °C; seeFigure 6; seeFigure 8
forward voltage	—	—	1.2 V	IS = 300mA, VGS = 0V
operating temperature	-65 °C	—	150 °C
power dissipation	—	—	830 mW	Tsp = 25 °C; seeFigure 2
reverse leakage current	—	10 nA	1 µA	VDS = 48 V; VGS = 0 V; Tj = 25 °C
breakdown voltage ds	60 V	—	—	ID = 10 μA; VGS = 0 V; Tj = 25 °C
drain current	—	—	300 mA	VGS = 10 V; Tsp = 25 °C; seeFigure 1; seeFigure 3
vgs threshold	1 V	2 V	2.5 V	ID = 0.25 mA; VDS = VGS; Tj = 25 °C; seeFigure 9; seeFigure 10
input capacitance	—	31 pF	50 pF	VDS = 10 V; f = 1 MHz; VGS = 0 V; Tj = 25 °C
output capacitance	—	6.8 pF	30 pF
reverse transfer capacitance	—	3.5 pF	10 pF
gate charge	—	1.7 nC	2.4 nC	VGS = 10V, VDS = 30V, ID = 0.3A
reverse recovery time	—	30 ns	—
collector emitter voltage	—	60 V	—
emitter base voltage	-30 V	—	30 V

03 — Alternatives

Closest matches to 2N7002

2N7002K 5.7× lower gate charge, 2.3× lower rds on, 2.2× lower power dissipation

2N7002K-T1 4.2× lower gate charge, 2.4× lower power dissipation, 1.4× lower reverse transfer capacitance

2N7002-13-F 7.6× lower gate charge, 3.3× higher drain current, 2.2× lower power dissipation

RK7002BM 2.4× lower power dissipation, 2.1× lower input capacitance, 1.8× lower reverse transfer capacitance

AO3402 13.3× higher drain current, 7.6× higher input capacitance, 5.9× higher gate charge

BSS138-7-F 3.7× higher output capacitance, 2.8× lower power dissipation, 2.3× higher reverse transfer capacitance

BSS138PS 3.0× lower power dissipation, 2.8× lower rds on, 2.4× lower gate charge

BSS138L 3.7× lower power dissipation, 2.7× higher output capacitance, 2.0× lower vgs threshold

04 — FAQ

Frequently asked questions

What is the breakdown voltage ds for the 2N7002?

The breakdown voltage ds is 60 V at ID = 10 μA; VGS = 0 V; Tj = 25 °C.

What is the collector-emitter voltage rating for the 2N7002?

The collector-emitter voltage is 60 V.

What is the drain current of the 2N7002?

The drain current is 300 mA at VGS = 10 V and Tsp = 25 °C, as shown in Figure 1 and Figure 3.

What is the maximum emitter-base voltage?

The maximum emitter-base voltage is 30 V.

What is the forward voltage when IS = 300mA and VGS = 0V?

The forward voltage is 1.2 V.

What is the gate charge of the 2N7002 when VGS = 10V, VDS = 30V, and ID = 0.3A?

The gate charge is 1.7 nC.

What is the input capacitance of the 2N7002?

The input capacitance is 31 pF at VDS = 10 V; f = 1 MHz; VGS = 0 V; Tj = 25 °C.

What is the maximum operating temperature for the 2N7002?

The maximum operating temperature is 150 °C.