Build with BSS138L — Datasheet Specs & AI Design Help

00 — Overview

What the BSS138L does

The BSS138LTxG family comprises N-channel power MOSFETs available in the BSS138LT1G, BVSS138LT1G, and BSS138LT3G variants. These devices handle 200 mA drain current and withstand 50 V drain-to-source voltage. They feature a low threshold voltage between 0.5 V and 1.5 V, a static on-resistance of 3.5 ohms, and a 225 mW power dissipation rating. The components operate across a junction temperature range of -55 to 150 °C. Typically used in DC-DC converters and power management circuits, these MOSFETs serve portable and battery-powered products like computers, printers, and cellular telephones. The BVSS prefix denotes automotive qualification for unique site and control change requirements.

Next step

Start building with BSS138L → Every number above is cited straight from the datasheet — ask what they mean for your design, and the assistant answers from the same source documents.

01 — Key specifications

Datasheet parameters

Datasheet parameters for BSS138L
Parameter	Min	Typ	Max	Conditions	Source
rds on	—	1.22 Ohm	—	VGS = 10 V, ID = 0.2 A, TJ = 25 °C	onsemi datasheet, p. 4
operating temperature	-55 °C	—	150 °C		onsemi datasheet, p. 1 — Features
power dissipation	—	—	225 mW	pd; Features	onsemi datasheet, p. 1 — Features
breakdown voltage ds	—	—	50 V	vdss; Features	onsemi datasheet, p. 1 — Features
drain current	—	—	201 A	ididm(tp≤ 10 μs); Features	onsemi datasheet, p. 1 — Features
vgs threshold	500 mV	—	1.5 V	VDS = VGS, ID = 1.0 mA	onsemi datasheet, p. 2 — ON CHARACTERISTICS (Note 1)
input capacitance	—	40 pF	—	VDS = 25 V, VGS = 0, f = 1 MHz	onsemi datasheet, p. 2 — DYNAMIC CHARACTERISTICS
output capacitance	12 pF	—	25 pF	(VDS = 25 Vdc, VGS = 0, f = 1 MHz); DYNAMIC CHARACTERISTICS	onsemi datasheet, p. 2 — DYNAMIC CHARACTERISTICS
reverse transfer capacitance	3.5 pF	—	5 pF	(VDG = 25 Vdc, VGS = 0, f = 1 MHz); transfer; DYNAMIC CHARACTERISTICS	onsemi datasheet, p. 2 — DYNAMIC CHARACTERISTICS
gate charge	—	2.75 nC	—	VGS = 10 V, VDS = 40 V, ID = 0.2 A, TJ = 25 °C	onsemi datasheet, p. 3

02 — Alternatives

Closest matches to BSS138L

BSS138 1.9× higher reverse transfer capacitance, 1.5× higher breakdown voltage ds, 1.4× higher output capacitance

2N7002K 9.2× lower gate charge, 4.4× lower output capacitance, 1.6× higher power dissipation

2N7002K-T1 9.2× lower gate charge, 4.4× lower output capacitance, 1.6× higher power dissipation

BSS138PS 3.8× lower gate charge, 2.6× lower output capacitance, 1.4× lower rds on

BSS138W 2.9× higher rds on, 1.5× lower input capacitance, 1.4× lower output capacitance

DMG1012T 4.1× lower rds on, 3.7× lower gate charge, 2.5× lower breakdown voltage ds

FDV303N 3.7× lower rds on, 2.1× higher reverse transfer capacitance, 2.0× lower breakdown voltage ds

RUM002N02T2L 2.5× lower breakdown voltage ds, 2.4× higher reverse transfer capacitance, 1.9× lower output capacitance

03 — FAQ

Frequently asked questions

What is the breakdown voltage ds for the BSS138L?

The breakdown voltage ds is 50 V at vdss.

What is the drain current (ID) for the BSS138L when IDIDM(tp≤ 10 μs); Features?

The drain current is 201 A.

What is the gate charge of the BSS138L at VGS = 10 V, VDS = 40 V, ID = 0.2 A, and TJ = 25 °C?

The gate charge is 2.75 nC.

What is the input capacitance of the BSS138L?

The input capacitance is 40 pF at VDS = 25 V, VGS = 0, and f = 1 MHz.

What is the maximum operating temperature for the BSS138L?

The maximum operating temperature is 150 °C.

What is the output capacitance of the BSS138L under dynamic characteristics conditions?

The output capacitance is 25 pF when VDS = 25 Vdc, VGS = 0, and f = 1 MHz.

What is the power dissipation (pd) of the BSS138L?

The power dissipation (pd) is 225 mW.

What is the maximum on-resistance (rds on) of the BSS138L?

The rds on is 1.22 Ohm at VGS = 10 V, ID = 0.2 A, and TJ = 25 °C.

What is the reverse transfer capacitance of the BSS138L?

The reverse transfer capacitance is 5 pF (VDG = 25 Vdc, VGS = 0, f = 1 MHz); transfer; DYNAMIC CHARACTERISTICS.

What is the maximum gate-source threshold voltage (VGS) for the BSS138L?

The gate-source threshold voltage is 1.5 V when VDS = VGS and ID = 1.0 mA.