BUK7230-55A — Datasheet Summary, Specs & Alternatives

01 — Overview

This Nexperia datasheet covers the BUK7230-55A, an N-channel TrenchMOS standard level MOSFET designed for automotive and general-purpose power switching. It details the device's capabilities for handling 12V and 24V loads like motors and solenoids within thermally demanding environments up to 175°C. Key parameters include a maximum drain-source voltage of 55 V, a continuous drain current of 38 A, total power dissipation of 88 W, and an on-state resistance between 26 and 30 mΩ.

02 — Key specifications

Datasheet parameters

Parameter	Min	Typ	Max	Conditions
rds on	—	26 mOhm	30 mOhm	VGS = 10 V; ID = 25 A; Tj = 25 °C; seeFigure 11and12
operating temperature	-55 °C	—	175 °C
power dissipation	—	—	88 W	Tmb = 25 °C; seeFigure 2
reverse leakage current	—	50 nA	10 µA	VDS = 55 V; VGS = 0 V; Tj = 25 °C
breakdown voltage ds	55 V	—	—	ID = 0.25 mA; VGS = 0 V; Tj = 25 °C
drain current	—	—	38 A	VGS = 5 V; Tmb = 25 °C; seeFigure 1and3
vgs threshold	2 V	3 V	4 V	ID = 1 mA; VDS = VGS; Tj = 25 °C; seeFigure 10
input capacitance	—	864 pF	1.15 nF	VGS = 0 V; VDS = 25 V; f = 1 MHz; Tj = 25 °C; seeFigure 15
output capacitance	—	218 pF	262 pF
reverse transfer capacitance	—	139 pF	191 pF
gate charge	—	24 nC	—	ID = 25 A; VDS = 44 V; VGS = 10 V; seeFigure 14
rise time	—	68 ns	—
fall time	—	43 ns	—
reverse recovery time	—	40 ns	—	IS = 25 A; dIS/dt = -100 A/µs; VGS = -10 V; VDS = 30 V; Tj = 25 °C
collector emitter voltage	—	55 V	—
emitter base voltage	-20 V	—	20 V

03 — Alternatives

Closest matches to BUK7230-55A

AO3407A 10.0× lower rise time, 4.3× lower fall time, 1.9× lower gate charge

AOD409 4.7× lower rise time, 3.4× higher input capacitance, 2.9× lower fall time

AOD4185 3.4× lower rise time, 3.0× higher input capacitance, 2.1× lower rds on

2N7002 14.1× lower gate charge, 5.0× lower reverse leakage current, 1.5× lower vgs threshold

2N7002K 20.0× higher reverse leakage current, 20.0× lower rise time, 4.3× lower fall time

AO3400A 20.0× higher reverse leakage current, 10.8× lower fall time, 6.7× lower drain current

IRL3713LPbF 14.4× higher output capacitance, 10.0× lower rds on, 6.8× higher drain current

RK7002BM 20.0× higher reverse leakage current, 13.6× lower rise time, 1.8× lower vgs threshold

04 — FAQ

Frequently asked questions

What is the breakdown voltage (ds) of the BUK7230-55A?

The breakdown voltage (ds) is 55 V at ID = 0.25 mA, VGS = 0 V, and Tj = 25 °C.

What is the collector-emitter voltage?

The collector-emitter voltage is 55 V.

What is the drain current?

The drain current is 38 A at VGS = 5 V; Tmb = 25 °C; seeFigure 1and3.

What is the maximum emitter-base voltage?

The emitter base voltage is 20 V.

What is the fall time of the BUK7230-55A?

The fall time is 43 ns.

What is the gate charge of the BUK7230-55A?

The gate charge is 24 nC at ID = 25 A; VDS = 44 V; VGS = 10 V; see Figure 14.

What is the input capacitance of the BUK7230-55A?

The input capacitance is 864 pF at VGS = 0 V; VDS = 25 V; f = 1 MHz; Tj = 25 °C; seeFigure 15.

What is the maximum operating temperature for the BUK7230-55A?

The operating temperature is 175 °C.