Build with BUK7230-55A — Datasheet Specs & AI Design Help

00 — Overview

What the BUK7230-55A does

The BUK7230-55A is an N-channel TrenchMOS standard level FET designed for automotive critical applications. It features a 55 V drain-source voltage rating, 38 A continuous drain current, and 88 W total power dissipation. The device operates up to 175 °C junction temperature and includes 58 mJ non-repetitive avalanche energy. Engineers typically use this component for switching 12 V and 24 V loads such as motors, lamps, and solenoids in both automotive and general purpose power systems.

Next step

Start building with BUK7230-55A → Every number above is cited straight from the datasheet — ask what they mean for your design, and the assistant answers from the same source documents.

01 — Key specifications

Datasheet parameters

Datasheet parameters for BUK7230-55A
Parameter	Min	Typ	Max	Conditions	Source
rds on	—	26 mOhm	30 mOhm	VGS = 10 V; ID = 25 A; Tj = 25 °C; seeFigure 11and12; rdson; Static characteristics	Nexperia datasheet, p. 1 — Table 1. Quick reference
operating temperature (abs max)	-55 °C	—	175 °C		Nexperia datasheet, p. 2 — Table 4. Limiting values
power dissipation	—	—	88 W	Tmb = 25 °C; seeFigure 2; ptot; Quick reference	Nexperia datasheet, p. 1 — Table 1. Quick reference
reverse leakage current	—	50 nA	10 µA	VDS = 55 V; VGS = 0 V; Tj = 25 °C; idss; Static characteristics	Nexperia datasheet, p. 5 — 6. Characteristics
breakdown voltage ds	55 V	—	—	ID = 0.25 mA; VGS = 0 V; Tj = 25 °C; v(br); Static characteristics	Nexperia datasheet, p. 5 — 6. Characteristics
drain current	—	—	38 A	VGS = 5 V; Tmb = 25 °C; seeFigure 1and3; id; Quick reference	Nexperia datasheet, p. 1 — Table 1. Quick reference
vgs threshold	2 V	3 V	4 V	ID = 1 mA; VDS = VGS; Tj = 25 °C; seeFigure 10; vgs(th); Static characteristics	Nexperia datasheet, p. 5 — 6. Characteristics
input capacitance	—	864 pF	1.15 nF	VGS = 0 V; VDS = 25 V; f = 1 MHz; Tj = 25 °C; seeFigure 15; ciss; Dynamic characteristics	Nexperia datasheet, p. 5 — 6. Characteristics
output capacitance	—	218 pF	262 pF	coss; Dynamic characteristics	Nexperia datasheet, p. 5 — 6. Characteristics
reverse transfer capacitance	—	139 pF	191 pF	crss; Dynamic characteristics	Nexperia datasheet, p. 5 — 6. Characteristics
gate charge	—	24 nC	—	ID = 25 A; VDS = 44 V; VGS = 10 V; seeFigure 14; qg(tot); Dynamic characteristics	Nexperia datasheet, p. 5 — 6. Characteristics
rise time	—	68 ns	—	tr; Dynamic characteristics	Nexperia datasheet, p. 5 — 6. Characteristics
fall time	—	43 ns	—	tf; Dynamic characteristics	Nexperia datasheet, p. 5 — 6. Characteristics
reverse recovery time	—	40 ns	—	IS = 25 A; dIS/dt = -100 A/µs; VGS = -10 V; VDS = 30 V; Tj = 25 °C; trr; Source-drain diode	Nexperia datasheet, p. 5 — 6. Characteristics
emitter base voltage (abs max)	—	—	20 V	gate-source voltage	Nexperia datasheet, p. 2 — Table 4. Limiting values

02 — Alternatives

Closest matches to BUK7230-55A

AO3407A 10.0× lower rise time, 4.3× lower fall time, 1.9× lower gate charge

AOD409 4.7× lower rise time, 3.4× higher input capacitance, 2.9× lower fall time

HL3415A 6.8× lower rise time, 2.2× lower gate charge, 1.7× lower output capacitance

HL6042 7.6× lower rise time, 2.6× lower gate charge, 1.9× lower output capacitance

AOD4185 3.4× lower rise time, 3.0× higher input capacitance, 2.1× lower rds on

HJ8205 20.0× higher reverse leakage current, 8.3× lower rise time, 6.4× lower fall time

HL3401A 1.9× higher rds on, 1.9× lower output capacitance, 1.8× lower reverse transfer capacitance

HL3400A 20.0× higher reverse leakage current, 2.9× lower vgs threshold, 2.2× lower output capacitance

03 — FAQ

Frequently asked questions

What is the breakdown voltage (ds) for the BUK7230-55A?

The breakdown voltage (ds) is 55 V when ID = 0.25 mA, VGS = 0 V, and Tj = 25 °C.

What is the drain current (ID) of the BUK7230-55A?

The drain current is 38 A at VGS = 5 V and Tmb = 25 °C.

What is the maximum emitter-base voltage when the gate-source voltage is applied?

The emitter-base voltage is 20 V when the gate-source voltage is applied.

What is the fall time (tf) under dynamic characteristics?

The fall time (tf) is 43 ns.

What is the total gate charge (qg(tot)) for the BUK7230-55A under dynamic conditions?

The total gate charge is 24 nC when ID = 25 A, VDS = 44 V, and VGS = 10 V, as shown in Figure 14.

What is the input capacitance (Ciss) of the BUK7230-55A?

The input capacitance is 864 pF at VGS = 0 V; VDS = 25 V; f = 1 MHz; Tj = 25 °C; seeFigure 15; ciss; Dynamic characteristics.

What is the maximum operating temperature?

The maximum operating temperature is 175 °C.

What is the output capacitance (coss) under dynamic characteristics?

The output capacitance (coss) is 218 pF.

What is the power dissipation of the BUK7230-55A?

The power dissipation is 88 W at Tmb = 25 °C; seeFigure 2; ptot; Quick reference.

What is the maximum on-state resistance (rds on) for the BUK7230-55A?

The rds on is 26 mOhm at VGS = 10 V, ID = 25 A, and Tj = 25 °C.

What is the reverse leakage current (idss) of the BUK7230-55A?

The reverse leakage current is 50 nA at VDS = 55 V, VGS = 0 V, and Tj = 25 °C.

What is the reverse recovery time (trr) of the source-drain diode?

The reverse recovery time is 40 ns at IS = 25 A; dIS/dt = -100 A/µs; VGS = -10 V; VDS = 30 V; Tj = 25 °C.