IMZ120R060M1H
Every spec below is cited to the manufacturer datasheet. Pick your exact ordering code, compare the closest alternatives, then ask the assistant what it means for your design.
What the IMZ120R060M1H family does
The IMZ120R060M1H is a CoolSiC™ 1200V SiC Trench MOSFET designed for high-efficiency power conversion. It features a 1200V drain-source voltage, 36A DC drain current, 60mΩ on-resistance, and a 175°C virtual junction temperature. This device enables higher switching frequencies and increased power density while reducing cooling requirements. Engineers typically use it in solar string inverters, industrial UPS systems, and EV chargers. The part offers threshold-free on-state characteristics and a robust body diode for hard commutation. It qualifies for industrial applications per JEDEC standards and operates across a wide temperature range from -55°C to 175°C.
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Every number above is cited straight from the datasheet — ask what they mean for your design, and the assistant answers from the same source documents.
IMZ120R060M1H datasheet parameters
| Parameter | Min | Typ | Max | Conditions | Source |
|---|---|---|---|---|---|
| rds on | — | 60 mOhm | — | V_GS = 18V, I_D = 13A, T_vj = 25°C | Infineon datasheet, p. 5 — Table 4 Static characteristics (at , unless otherwise specified) |
| forward voltage | — | 4.1 V | 5.2 V | VGS = 0V, ISD = 13ATvj = 25^\circ C; {sd}; Static characteristics (at $ Tvj = 25^{\circ}C $, unless otherwise specified) | Infineon datasheet, p. 5 — Table 4 Static characteristics (at , unless otherwise specified) |
| operating temperature (abs max) | -55 °C | — | 175 °C | Infineon datasheet, p. 3 — 1 Maximum ratings | |
| power dissipation (abs max) | — | — | 150 W | T_C = 25°C | Infineon datasheet, p. 3 — 1 Maximum ratings |
| breakdown voltage ds (abs max) | — | — | 1.2 kV | Infineon datasheet, p. 3 — 1 Maximum ratings | |
| drain current | — | — | 100 nA | VGS = 23V, VDS = 0V; zero{gss}; Static characteristics (at $ Tvj = 25^{\circ}C $, unless otherwise specified) | Infineon datasheet, p. 5 — Table 4 Static characteristics (at , unless otherwise specified) |
| vgs threshold | 3.5 V | 4.5 V | 5.7 V | (tested after 1 ms pulse atVGS = 20V)I_D = 5.6mA, VDS = VGSTvj = 25^\circ C; gate(th); Static characteristics (at $ Tvj = 25^{\circ}C $, unless otherwise specified) | Infineon datasheet, p. 5 — Table 4 Static characteristics (at , unless otherwise specified) |
| input capacitance | — | 1.06 nF | — | VDD = 800V, VGS = 0V, f = 1MHz, VAC = 25mV; {iss}; Dynamic characteristics (at $ Tvj = 25^{\circ}C $, unless otherwise specified) | Infineon datasheet, p. 6 — Table 5 Dynamic characteristics (at , unless otherwise specified) |
| output capacitance | — | 58 pF | — | VDD = 800V, VGS = 0V, f = 1MHz, VAC = 25mV; {oss}; Dynamic characteristics (at $ Tvj = 25^{\circ}C $, unless otherwise specified) | Infineon datasheet, p. 6 — Table 5 Dynamic characteristics (at , unless otherwise specified) |
| reverse transfer capacitance | — | 6.5 pF | — | V_DD = 800V, V_GS = 0V, f = 1MHz | Infineon datasheet, p. 6 — Table 5 Dynamic characteristics (at , unless otherwise specified) |
| gate charge | — | 31 nC | — | VDD = 800V, I_D = 13A, VGS = 0/18V, \text{turn-on pulse}; Dynamic characteristics (at $ Tvj = 25^{\circ}C $, unless otherwise specified) | Infineon datasheet, p. 6 — Table 5 Dynamic characteristics (at , unless otherwise specified) |
| rise time | — | — | 5 ns | VDD = 800V, I_D = 13A, VGS = 0/18V, RG, ext = 2\Omega, L\sigma = 40nH, diode:body diode atVGS = 0Vsee Fig. E; 3.3 Switching characteristics | Infineon datasheet, p. 7 — 3.3 Switching characteristics |
| fall time | — | — | 10.8 ns | VDD = 800V, I_D = 13A, VGS = 0/18V, RG, ext = 2\Omega, L\sigma = 40nH, diode:body diode atVGS = 0Vsee Fig. E; 3.3 Switching characteristics | Infineon datasheet, p. 7 — 3.3 Switching characteristics |
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