HT80N10ARDZ
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What the HT80N10ARDZ family does
The HT80N10ARDZ is an 800 V N-Channel SiC MOSFET available in a DFN-8(5x6) package with a Pb-free suffix. It operates across a junction temperature range of -55 to 175 °C and features a drain-source breakdown voltage of 650 V. The device exhibits a static drain-source on-resistance of 360 mΩ at 25 °C and a total gate charge of 10.6 nC. It supports a continuous drain current of 12 A at 25 °C and 9 A at 100 °C. This component is typically used in power factor correction modules, switch mode power supplies, power inverters, and high voltage converters. Its low capacitances enable high-speed switching, while its thermal characteristics reduce heat sink requirements and increase power density.
HT80N10ARDZ datasheet parameters
| Parameter | Min | Typ | Max | Conditions | Source |
|---|---|---|---|---|---|
| rds on | — | 360 mOhm | 400 mOhm | VGS = 15 V, ID = 6 A, TJ = 25°C; rds(on); Electrical Characteristics | HTCsemi datasheet, p. 2 — Electrical Characteristics |
| forward voltage | — | 4 V | — | VGS = -4V, ISD = 5A, TJ = 25°C; vsd; Reverse SiC Diode Characteristics | HTCsemi datasheet, p. 2 — Reverse SiC Diode Characteristics |
| operating temperature | -55 °C | — | 175 °C | HTCsemi datasheet, p. 1 — Applications | |
| power dissipation | — | — | 5.22 kW | Tc = 25°CTc = 100°C; ptot; Applications | HTCsemi datasheet, p. 1 — Applications |
| forward current | — | — | 12 A | TC = 25°C; Reverse SiC Diode Characteristics | HTCsemi datasheet, p. 2 — Reverse SiC Diode Characteristics |
| reverse leakage current | — | 2 µA | 100 µA | VGS = 0 V, VDS = 750 V; idss; Electrical Characteristics | HTCsemi datasheet, p. 2 — Electrical Characteristics |
| breakdown voltage ds | 650 V | — | 850 V | VGS = 0 V, ID = 1 mA; v(br); Electrical Characteristics | HTCsemi datasheet, p. 2 — Electrical Characteristics |
| drain current | — | — | 129 A | Tc = 25°CTc = 100°C; id; Applications | HTCsemi datasheet, p. 1 — Applications |
| vgs threshold | — | 3.5 V | 4.2 V | VGS = VDS, IDS = 1 mA, TJ = 25°C; vgs(th); Electrical Characteristics | HTCsemi datasheet, p. 2 — Electrical Characteristics |
| input capacitance | — | 208 pF | — | VDS = 400 V, f = 1 MHz, VGS = 0 V; ciss; Electrical Characteristics | HTCsemi datasheet, p. 2 — Electrical Characteristics |
| output capacitance | — | 18 pF | — | VDS = 400 V, f = 1 MHz, VGS = 0 V; coss; Electrical Characteristics | HTCsemi datasheet, p. 2 — Electrical Characteristics |
| reverse transfer capacitance | — | 1.8 pF | — | VDS = 400 V, f = 1 MHz, VGS = 0 V; crss; Electrical Characteristics | HTCsemi datasheet, p. 2 — Electrical Characteristics |
| gate charge | — | 10.6 nC | — | VDD = 400 V, VGS = -5/18 V, ID = 5 A; qg; Electrical Characteristics | HTCsemi datasheet, p. 2 — Electrical Characteristics |
| rise time | — | 17 ns | — | VDD = 400 V, ID = 5 A, RG = 10 Ω, VGS = -5/18 V; tr; Electrical Characteristics | HTCsemi datasheet, p. 2 — Electrical Characteristics |
| fall time | — | 10 ns | — | VDD = 400 V, ID = 5 A, RG = 10 Ω, VGS = -5/18 V; tf; Electrical Characteristics | HTCsemi datasheet, p. 2 — Electrical Characteristics |
| reverse recovery time | — | 50 ns | — | ISD = 5 A, di/dt = 1000 A/μs, VDD = 400 V, VGS = -5 V; trr; Reverse SiC Diode Characteristics | HTCsemi datasheet, p. 2 — Reverse SiC Diode Characteristics |
HT80N10ARDZ frequently asked questions
What is the breakdown voltage (ds) under the condition of VGS = 0 V, ID = 1 mA?
The breakdown voltage is 850 V.
What is the drain current of the HT80N10ARDZ at Tc = 25°C and Tc = 100°C?
The drain current is 129 A.
What is the fall time (tf) of the HT80N10ARDZ under the conditions VDD = 400 V, ID = 5 A, RG = 10 Ω, and VGS = -5/18 V?
The fall time (tf) is 10 ns.
What is the forward current of the HT80N10ARDZ under Reverse SiC Diode Characteristics at TC = 25°C?
The forward current is 12 A.
What is the forward voltage of the reverse SiC diode?
The forward voltage is 4 V at VGS = -4V, ISD = 5A, and TJ = 25°C.
What is the gate charge (qg) under the conditions VDD = 400 V, VGS = -5/18 V, and ID = 5 A?
The gate charge is 10.6 nC.
What is the input capacitance (Ciss) of the HT80N10ARDZ?
The input capacitance is 208 pF at VDS = 400 V, f = 1 MHz, and VGS = 0 V.
What is the maximum operating temperature for the HT80N10ARDZ?
The maximum operating temperature is 175 °C.
What is the output capacitance (coss) of the HT80N10ARDZ under the conditions VDS = 400 V, f = 1 MHz, and VGS = 0 V?
The output capacitance is 18 pF.
What is the power dissipation of the HT80N10ARDZ at Tc = 25°CTc = 100°C; ptot; Applications?
The power dissipation is 5.22 kW.
What is the maximum on-state resistance (rds(on)) for the HT80N10ARDZ?
The rds(on) is 360 mOhm at VGS = 15 V, ID = 6 A, and TJ = 25°C.
What is the reverse leakage current (idss) when VGS = 0 V and VDS = 750 V?
The reverse leakage current is 2 µA.