transistors thyristors

HJ8205

Every spec below is cited to the manufacturer datasheet. Pick your exact ordering code, compare the closest alternatives, then ask the assistant what it means for your design.

00 — Overview

What the HJ8205 family does

The HJ8205 is an N-channel trench power MOSFET in the SOT-23-6L package. It features a 20 V drain-source voltage rating, 4.3 A continuous drain current, and less than 30 mΩ on-resistance at 4.0 V gate drive. The device includes a fast switching body diode capable of 1.7 A. Engineers typically use this component in battery-operated systems, load switches, and uninterruptible power supplies. It operates across a junction temperature range of -55 to +150 °C and meets RoHS compliance standards.

Next step
Start building with HJ8205 → Every number above is cited straight from the datasheet — ask what they mean for your design, and the assistant answers from the same source documents.
01 — Key specifications

HJ8205 datasheet parameters

ParameterMinTypMaxConditionsSource
rds on 30 mOhm VGS = 4.0V, Ib = 4.3A; (on); ☑ Ordering Information Hongjiacheng datasheet, p. 2 — ☑ Ordering Information
forward voltage 1.2 V IS = 1.7A, VGS = 0V; ☑ Ordering Information Hongjiacheng datasheet, p. 2 — ☑ Ordering Information
operating temperature (abs max) -55 °C 150 °C Hongjiacheng datasheet, p. 1 — • Maximum Ratings (Ta=25°C Unless otherwise specified)
power dissipation (abs max) 1.25 W • Maximum Ratings (Ta = 25°C Unless otherwise specified) Hongjiacheng datasheet, p. 1 — • Maximum Ratings (Ta=25°C Unless otherwise specified)
reverse leakage current 1 µA VDS = 20V, VGS = 0V; zero; ☑ Ordering Information Hongjiacheng datasheet, p. 2 — ☑ Ordering Information
breakdown voltage ds 20 V VGS = 0V, ID = 250μA; ☑ Ordering Information Hongjiacheng datasheet, p. 2 — ☑ Ordering Information
drain current (abs max) 4.3 A • Maximum Ratings (Ta = 25°C Unless otherwise specified) Hongjiacheng datasheet, p. 1 — • Maximum Ratings (Ta=25°C Unless otherwise specified)
vgs threshold 450 mV 1 V VDS = VGS, Ib = 250μA; gate(th); ☑ Ordering Information Hongjiacheng datasheet, p. 2 — ☑ Ordering Information
input capacitance 550 pF VDS = 8.0VVGS = 0Vf = 1.0MHZ; • Dynamic Parameters (Ta = 25°C Unless otherwise specified) Hongjiacheng datasheet, p. 2 — • Dynamic Parameters (Ta=25°C Unless otherwise specified)
output capacitance 164 pF VDS = 8.0VVGS = 0Vf = 1.0MHZ; • Dynamic Parameters (Ta = 25°C Unless otherwise specified) Hongjiacheng datasheet, p. 2 — • Dynamic Parameters (Ta=25°C Unless otherwise specified)
reverse transfer capacitance 138 pF VDS = 8.0VVGS = 0Vf = 1.0MHZ; • Dynamic Parameters (Ta = 25°C Unless otherwise specified) Hongjiacheng datasheet, p. 2 — • Dynamic Parameters (Ta=25°C Unless otherwise specified)
gate charge 6.2 nC VGS = 4.5VVDS = 10VID = 3.0A; • Switching Parameters (Ta = 25°C Unless otherwise specified) Hongjiacheng datasheet, p. 2 — • Switching Parameters (Ta=25°C Unless otherwise specified)
rise time 8.2 ns VGEN = 4.5V, VDD = 10VID = 1.0ARL = 10Ω, RGEN = 6.0Ω; turn; • Switching Parameters (Ta = 25°C Unless otherwise specified) Hongjiacheng datasheet, p. 2 — • Switching Parameters (Ta=25°C Unless otherwise specified)
fall time 6.7 ns VGEN = 4.5V, VDD = 10VID = 1.0ARL = 10Ω, RGEN = 6.0Ω; turn; • Switching Parameters (Ta = 25°C Unless otherwise specified) Hongjiacheng datasheet, p. 2 — • Switching Parameters (Ta=25°C Unless otherwise specified)
02 — FAQ

HJ8205 frequently asked questions

What is the breakdown voltage ds for the HJ8205?

The breakdown voltage ds is 20 V at VGS = 0V, ID = 250μA.

What is the maximum drain current of the HJ8205 at Ta = 25°C?

The maximum drain current is 4.3 A.

What is the fall time of the HJ8205 under the condition VGEN = 4.5V, VDD = 10V, ID = 1.0A, RL = 10Ω, RGEN = 6.0Ω at Ta = 25°C?

The fall time is 6.7 ns.

What is the forward voltage of the HJ8205 when IS = 1.7A and VGS = 0V?

The forward voltage is 1.2 V.

What is the gate charge (Qg) of the HJ8205 under the conditions VGS = 4.5V, VDS = 10V, and ID = 3.0A at Ta = 25°C?

The gate charge is 6.2 nC.

What is the input capacitance of the HJ8205?

The input capacitance is 550 pF at VDS = 8.0V, VGS = 0V, and f = 1.0MHz.

What is the maximum operating temperature for the HJ8205?

The maximum operating temperature is 150 °C.

What is the output capacitance of the HJ8205?

The output capacitance is 164 pF at VDS = 8.0V, VGS = 0V, and f = 1.0MHz.

What is the power dissipation of the HJ8205?

The power dissipation is 1.25 W at Ta = 25°C.

What is the maximum on-resistance (rds on) for the HJ8205?

The on-resistance is 30 mOhm at VGS = 4.0V and Ib = 4.3A.

What is the reverse leakage current of the HJ8205?

The reverse leakage current is 1 µA at VDS = 20V and VGS = 0V.

What is the reverse transfer capacitance of the HJ8205 at VDS = 8.0V, VGS = 0V, and f = 1.0MHz?

The reverse transfer capacitance is 138 pF.

03 — Alternatives

Closest matches to HJ8205

HL2300 3.5× higher fall time, 2.4× higher rise time, 2.0× lower output capacitance
MDD2302 5.4× lower drain current, 4.4× higher rise time, 4.2× lower reverse transfer capacitance
Si2302CDS 4.6× lower reverse transfer capacitance, 3.0× lower output capacitance, 2.1× lower drain current
AO3400A 3.8× lower drain current, 3.3× lower rise time, 2.8× lower reverse transfer capacitance
HL3400A 3.6× lower power dissipation, 1.9× higher input capacitance, 1.8× lower reverse transfer capacitance
HL2302 5.5× lower reverse transfer capacitance, 5.5× lower output capacitance, 4.6× lower input capacitance
HL2310A 7.1× lower reverse transfer capacitance, 4.8× lower output capacitance, 3.0× higher breakdown voltage ds
HL6042 4.3× higher fall time, 1.7× lower reverse transfer capacitance, 1.5× higher gate charge
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