IPD60R360P7S
Every spec below is cited to the manufacturer datasheet. Pick your exact ordering code, compare the closest alternatives, then ask the assistant what it means for your design.
What the IPD60R360P7S family does
The IPD60R360P7S is a 650 V N-Channel SiC Power MOSFET in a TO-252-2L package. It features a 650 V drain-source breakdown voltage, 12 A continuous drain current, and 220 mΩ on-state resistance at 25°C. The device supports high-speed switching with low capacitances and minimal gate charge. Engineers typically use it in power factor correction modules, switch mode power supplies, DC-AC inverters, and high voltage DC/DC converters. Its low thermal resistance and easy parallel capability reduce heat sink requirements while increasing power density and efficiency.
IPD60R360P7S datasheet parameters
| Parameter | Min | Typ | Max | Conditions | Source |
|---|---|---|---|---|---|
| rds on | — | 180 mOhm | — | VGS = 18V, ID = 4.5A, TJ = 25°C | HXY datasheet, p. 2 — Static Characteristics |
| forward voltage | — | 4 V | — | VGS = -4V, ISD = 2.5ATj = 25°CTj = 175°C | HXY datasheet, p. 3 — Reverse Diode Characteristics |
| operating temperature | -55 °C | — | 175 °C | HXY datasheet, p. 1 — Applications | |
| power dissipation | — | — | 52 W | TC = 25°C; pd; Applications | HXY datasheet, p. 1 — Applications |
| forward current | — | 15 A | — | Tc = 25°CTc = 100°C; continuous | HXY datasheet, p. 3 — Reverse Diode Characteristics |
| reverse leakage current | — | 1 µA | 15 µA | VDS = 650V, VGS = 0V; idss; Static Characteristics | HXY datasheet, p. 2 — Static Characteristics |
| breakdown voltage ds | 650 V | — | — | ID = 1 mA, VGS = 0V; v(br); Static Characteristics | HXY datasheet, p. 2 — Static Characteristics |
| drain current | — | — | 15 A | TC = 25°C; id; Applications | HXY datasheet, p. 1 — Applications |
| vgs threshold | — | — | 4 V | VDS = VGS, ID = 1mATJ = 25°CTJ = 175°C; vgs(th); Static Characteristics | HXY datasheet, p. 2 — Static Characteristics |
| input capacitance | — | 180 pF | — | VDS = 400V, f = 1MHz, VGS = 0V; ciss; Static Characteristics | HXY datasheet, p. 2 — Static Characteristics |
| output capacitance | — | 20 pF | — | VDS = 400V, f = 1MHz, VGS = 0V; coss; Static Characteristics | HXY datasheet, p. 2 — Static Characteristics |
| reverse transfer capacitance | — | 900 fF | — | VDS = 400V, f = 1MHz, VGS = 0V; crss; Static Characteristics | HXY datasheet, p. 2 — Static Characteristics |
| gate charge | — | 11.2 nC | — | VDS = 400V, ID = 5A, RG = 10 ΩVGS = 0/15V; qg; Static Characteristics | HXY datasheet, p. 2 — Static Characteristics |
| rise time | — | 17 ns | — | VDD = 400V, ID = 5 A, VGS = -5/18 V, RG = 10Ω,; tr; Static Characteristics | HXY datasheet, p. 2 — Static Characteristics |
| fall time | — | 10 ns | — | VDD = 400V, ID = 5 A, VGS = -5/18 V, RG = 10Ω,; tf; Static Characteristics | HXY datasheet, p. 2 — Static Characteristics |
| reverse recovery time | — | 50 ns | — | ISD = -5AVGS = -5V, ISD = 4.5A,; trr; Reverse Diode Characteristics | HXY datasheet, p. 3 — Reverse Diode Characteristics |
IPD60R360P7S frequently asked questions
What is the breakdown voltage (Vbr) of the IPD60R360P7S?
The breakdown voltage is 650 V when ID = 1 mA and VGS = 0V.
What is the drain current (ID) at TC = 25°C?
The drain current is 15 A at TC = 25°C.
What is the fall time (tf) under the conditions VDD = 400V, ID = 5 A, VGS = -5/18 V, and RG = 10Ω?
The fall time is 10 ns.
What is the forward current specification for the IPD60R360P7S at Tc = 25°C and Tc = 100°C under continuous conditions?
The forward current is 15 A at Tc = 25°C and Tc = 100°C; continuous.
What is the forward voltage at VGS = -4V, ISD = 2.5A, and Tj = 25°C to 175°C?
The forward voltage is 4 V.
What is the gate charge (qg) of the IPD60R360P7S under the conditions VDS = 400V, ID = 5A, RG = 10 Ω, and VGS = 0/15V?
The gate charge is 11.2 nC.
What is the input capacitance (Ciss) of the IPD60R360P7S?
The input capacitance is 180 pF at VDS = 400V, f = 1MHz, and VGS = 0V.
What is the maximum operating temperature for the IPD60R360P7S?
The maximum operating temperature is 175 °C.
What is the output capacitance (coss) of the IPD60R360P7S under the condition of VDS = 400V, f = 1MHz, and VGS = 0V?
The output capacitance is 20 pF.
What is the power dissipation of the IPD60R360P7S at TC = 25°C?
The power dissipation is 52 W.
What is the maximum on-resistance (rds on) for the IPD60R360P7S at VGS = 18V, ID = 4.5A, and TJ = 25°C?
The maximum on-resistance (rds on) is 180 mOhm at VGS = 18V, ID = 4.5A, and TJ = 25°C.
What is the reverse leakage current (idss) of the IPD60R360P7S?
The reverse leakage current is 1 µA at VDS = 650V and VGS = 0V.