transistors thyristors

HT80N15ARDZ

Every spec below is cited to the manufacturer datasheet. Pick your exact ordering code, compare the closest alternatives, then ask the assistant what it means for your design.

00 — Overview

What the HT80N15ARDZ family does

The HT80N15ARDZ is an 800 V N-Channel SiC MOSFET available in a DFN-8(5x6) package with a Pb-free option. It features a 39 A peak drain current, 220 mΩ static on-resistance, and 11.2 nC total gate charge. The device supports a junction temperature range of -55 to 175 °C and includes an integrated SiC diode with 50 ns reverse recovery time. Engineers typically use this component in power factor correction modules, switch mode power supplies, power inverters, and high voltage converters to achieve increased power density and higher operating frequencies.

Next step
Start building with HT80N15ARDZ → Every number above is cited straight from the datasheet — ask what they mean for your design, and the assistant answers from the same source documents.
01 — Key specifications

HT80N15ARDZ datasheet parameters

ParameterMinTypMaxConditionsSource
rds on — 260 mOhm 300 mOhm VGS = 15 V, ID = 4.5 A, TJ = 25°C; rds(on); Electrical Characteristics HTCsemi datasheet, p. 2 — Electrical Characteristics
forward voltage — 4 V — VGS = -4V, ISD = 2.5A, TJ = 25°C; vsd; Reverse SiC Diode Characteristics HTCsemi datasheet, p. 2 — Reverse SiC Diode Characteristics
operating temperature (abs max) -55 °C — 175 °C HTCsemi datasheet, p. 1 — Maximum ratings ( unless otherwise specified)
power dissipation (abs max) — — 52 W HTCsemi datasheet, p. 1 — Maximum ratings ( unless otherwise specified)
forward current — — 15 A TC = 25°C; Reverse SiC Diode Characteristics HTCsemi datasheet, p. 2 — Reverse SiC Diode Characteristics
reverse leakage current — 1 µA 15 µA VGS = 0 V, VDS = 850 V; idss; Electrical Characteristics HTCsemi datasheet, p. 2 — Electrical Characteristics
breakdown voltage ds 800 V — — VGS = 0 V, ID = 1 mA; v(br); Electrical Characteristics HTCsemi datasheet, p. 2 — Electrical Characteristics
drain current (abs max) — — 15 A HTCsemi datasheet, p. 1 — Maximum ratings ( unless otherwise specified)
vgs threshold — 3.5 V 4 V VGS = VDS, IDS = 1 mA, TJ = 25°C; vgs(th); Electrical Characteristics HTCsemi datasheet, p. 2 — Electrical Characteristics
input capacitance — 180 pF — VDS = 400 V, f = 1 MHz, VGS = 0 V; ciss; Electrical Characteristics HTCsemi datasheet, p. 2 — Electrical Characteristics
output capacitance — 20 pF — VDS = 400 V, f = 1 MHz, VGS = 0 V; coss; Electrical Characteristics HTCsemi datasheet, p. 2 — Electrical Characteristics
reverse transfer capacitance — 900 fF — VDS = 400 V, f = 1 MHz, VGS = 0 V; crss; Electrical Characteristics HTCsemi datasheet, p. 2 — Electrical Characteristics
gate charge — 11.2 nC — VDD = 400 V, ID = 5 A, RG = 10 Ω, VGS = 0/15 V; qg; Electrical Characteristics HTCsemi datasheet, p. 2 — Electrical Characteristics
rise time — 17 ns — VDD = 400 V, ID = 5 A, RG = 10 Ω, VGS = -5/18 V; tr; Electrical Characteristics HTCsemi datasheet, p. 2 — Electrical Characteristics
fall time — 10 ns — VDD = 400 V, ID = 5 A, RG = 10 Ω, VGS = -5/18 V; tf; Electrical Characteristics HTCsemi datasheet, p. 2 — Electrical Characteristics
reverse recovery time — 50 ns — ISD = 5 A, di/dt = 1000 A/μs, VDD = 400 V, VGS = -5 V; trr; Reverse SiC Diode Characteristics HTCsemi datasheet, p. 2 — Reverse SiC Diode Characteristics
03 — Alternatives

Closest matches to HT80N15ARDZ

HT80N10ARDZ 11.7× lower drain current, 2.0× higher reverse leakage current, 2.0× higher reverse transfer capacitance
IPD60R360P7S 1.4× lower rds on, 1.2× lower breakdown voltage ds, 1.1× higher vgs threshold
HL2310A 13.3× lower breakdown voltage ds, 4.4× lower forward voltage, 2.9× lower rds on
FDV303N 10.0× higher reverse transfer capacitance, 4.4× lower vgs threshold, 3.6× lower input capacitance
HT65N23E 3.4× lower gate charge, 2.6× higher output capacitance, 2.1× lower vgs threshold
YHJ-65H225AMC 7.0× lower gate charge, 2.5× higher output capacitance, 2.2× lower vgs threshold
2N7002 13.3× lower breakdown voltage ds, 10.8× higher rds on, 5.8× lower input capacitance
HL2302 5.8× lower rds on, 4.7× lower vgs threshold, 3.3× lower forward voltage
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