IMZ120R045M1
Every spec below is cited to the manufacturer datasheet. Pick your exact ordering code, compare the closest alternatives, then ask the assistant what it means for your design.
What the IMZ120R045M1 family does
The IMZ120R045M1 is a CoolSiC™ 1200V SiC Trench MOSFET designed for high-efficiency power conversion. It features a 1200V drain-source voltage, 52A DC drain current, 45mΩ on-resistance, and a 175°C maximum junction temperature. This device offers very low switching losses and a commutation robust body diode ready for synchronous rectification. Engineers typically use it in solar string inverters, industrial UPS systems, and chargers to increase power density and reduce cooling requirements. The part operates across a wide gate-source voltage range with a benchmark threshold of 4.5V.
Next step
Start building with IMZ120R045M1 →
Every number above is cited straight from the datasheet — ask what they mean for your design, and the assistant answers from the same source documents.
IMZ120R045M1 datasheet parameters
| Parameter | Min | Typ | Max | Conditions | Source |
|---|---|---|---|---|---|
| rds on | — | 45 mOhm | — | V_GS = 15V, I_D = 20A, T_vj = 25°C | Infineon datasheet, p. 5 — Table 4 Static characteristics (at , unless otherwise specified) |
| forward voltage | — | 4.1 V | 5.2 V | Tvj = 25^\circ C; {sd}; Static characteristics (at $ Tvj = 25^{\circ}C $, unless otherwise specified) | Infineon datasheet, p. 5 — Table 4 Static characteristics (at , unless otherwise specified) |
| operating temperature | — | 175 °C | — | Infineon datasheet, p. 1 — Table 1 Key Performance and Package Parameters | |
| power dissipation (abs max) | — | — | 114 W | {tot}; Power dissipation, limited byTvjmax | Infineon datasheet, p. 3 — 1 Maximum ratings |
| forward current (abs max) | — | — | 52 A | {sd}; 1 Maximum ratings | Infineon datasheet, p. 3 — 1 Maximum ratings |
| breakdown voltage ds (abs max) | — | — | 1.2 kV | Infineon datasheet, p. 3 — 1 Maximum ratings | |
| drain current | — | — | 120 nA | VGS = 20V, VDS = 0V; zero{gss}; Static characteristics (at $ Tvj = 25^{\circ}C $, unless otherwise specified) | Infineon datasheet, p. 5 — Table 4 Static characteristics (at , unless otherwise specified) |
| vgs threshold | 3.5 V | 4.5 V | 5.7 V | Tvj = 25^\circ C; gate(th); Static characteristics (at $ Tvj = 25^{\circ}C $, unless otherwise specified) | Infineon datasheet, p. 5 — Table 4 Static characteristics (at , unless otherwise specified) |
| input capacitance | — | 1.9 nF | — | VDD = 800V, VGS = 0V, f = 1MHz, VAC = 25mV; {iss}; Dynamic characteristics (at $ Tvj = 25^{\circ}C $, unless otherwise specified) | Infineon datasheet, p. 6 — Table 5 Dynamic characteristics (at , unless otherwise specified) |
| output capacitance | — | 115 pF | — | VDD = 800V, VGS = 0V, f = 1MHz, VAC = 25mV; {oss}; Dynamic characteristics (at $ Tvj = 25^{\circ}C $, unless otherwise specified) | Infineon datasheet, p. 6 — Table 5 Dynamic characteristics (at , unless otherwise specified) |
| reverse transfer capacitance | — | 13 pF | — | V_DD = 800V, V_GS = 0V, f = 1MHz | Infineon datasheet, p. 6 — Table 5 Dynamic characteristics (at , unless otherwise specified) |
| gate charge | — | 52 nC | — | VDD = 800V, I_D = 20A, VGS = 0/15V, \text{turn-on pulse}; Dynamic characteristics (at $ Tvj = 25^{\circ}C $, unless otherwise specified) | Infineon datasheet, p. 6 — Table 5 Dynamic characteristics (at , unless otherwise specified) |
| rise time | — | — | 18 ns | VDD = 800V, I_D = 20A, VGS = 0/15V, RG, ext = 2\Omega, L\sigma = 40nH, diode:body diode atVGS = 0Vsee Fig. E; Switching characteristics | Infineon datasheet, p. 7 — Switching characteristics |
| fall time | — | — | 13 ns | VDD = 800V, I_D = 20A, VGS = 0/15V, RG, ext = 2\Omega, L\sigma = 40nH, diode:body diode atVGS = 0Vsee Fig. E; Switching characteristics | Infineon datasheet, p. 7 — Switching characteristics |
Closest matches to IMZ120R045M1
IMZ120R060M1H
3.6× lower rise time, 2.9× lower operating temperature, 2.0× lower reverse transfer capacitance
HT80N10ARDZ
9.1× lower input capacitance, 8.0× higher rds on, 7.2× lower reverse transfer capacitance
HT80N15ARDZ
14.4× lower reverse transfer capacitance, 10.6× lower input capacitance, 5.8× higher rds on
IPD60R360P7S
14.4× lower reverse transfer capacitance, 10.6× lower input capacitance, 5.8× lower output capacitance
AOD409
11.8× higher reverse transfer capacitance, 3.8× lower power dissipation, 2.9× lower operating temperature
IMBF170R1K0M1
18.6× lower reverse transfer capacitance, 16.0× lower output capacitance, 10.4× lower gate charge
HL2302
15.8× lower input capacitance, 11.6× lower gate charge, 6.0× lower vgs threshold
HL2310A
20.0× lower breakdown voltage ds, 8.7× lower gate charge, 7.7× lower input capacitance
Design help
What do I need around the IMZ120R045M1? →