HL2307
Every spec below is cited to the manufacturer datasheet. Pick your exact ordering code, compare the closest alternatives, then ask the assistant what it means for your design.
What the HL2307 family does
The HL2307 is a P-channel MOSFET in the SOT-23 package featuring trench power technology. It handles a drain-source voltage of -30 V, supports a steady-state drain current of -2.6 A, and maintains an on-resistance below 90 mΩ at -10 V gate drive. The device switches quickly with a total gate charge of 4.0 nC and a threshold voltage between -1.0 V and -2.2 V. Engineers typically use this component in battery-operated systems, solid-state relays, and direct logic-level interfaces for TTL or CMOS applications. It operates across a junction temperature range of -55 to +150 degrees Celsius.
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Every number above is cited straight from the datasheet — ask what they mean for your design, and the assistant answers from the same source documents.
HL2307 datasheet parameters
| Parameter | Min | Typ | Max | Conditions | Source |
|---|---|---|---|---|---|
| rds on | — | 77 mOhm | 90 mOhm | VGS = -10V, ID = -2.6A; (on); ☑ Ordering Information | Hongjiacheng datasheet, p. 2 — ☑ Ordering Information |
| forward voltage | — | — | -1 V | IS = -1.0A, VGS = 0V; ☑ Ordering Information | Hongjiacheng datasheet, p. 2 — ☑ Ordering Information |
| operating temperature (abs max) | -55 °C | — | 150 °C | Hongjiacheng datasheet, p. 1 — • Maximum Ratings (Ta=25°C Unless otherwise specified) | |
| power dissipation (abs max) | — | — | 1 W | • Maximum Ratings (Ta = 25°C Unless otherwise specified) | Hongjiacheng datasheet, p. 1 — • Maximum Ratings (Ta=25°C Unless otherwise specified) |
| reverse leakage current | — | — | -1 µA | VDS = -30V, VGS = 0V; zero; ☑ Ordering Information | Hongjiacheng datasheet, p. 2 — ☑ Ordering Information |
| breakdown voltage ds | -30 V | — | — | VGS = 0V, ID = -250μA; ☑ Ordering Information | Hongjiacheng datasheet, p. 2 — ☑ Ordering Information |
| drain current (abs max) | — | — | -2.6 A | TA = 25°C @ Steady State; • Maximum Ratings (Ta = 25°C Unless otherwise specified) | Hongjiacheng datasheet, p. 1 — • Maximum Ratings (Ta=25°C Unless otherwise specified) |
| vgs threshold | — | -1.6 V | — | Hongjiacheng datasheet, p. 2 — ☑ Ordering Information | |
| input capacitance | — | 200 pF | — | VDS = -15VVGS = 0Vf = 1MHZ; • Dynamic Parameters (Ta = 25°C Unless otherwise specified) | Hongjiacheng datasheet, p. 2 — • Dynamic Parameters (Ta=25°C Unless otherwise specified) |
| output capacitance | — | 45 pF | — | VDS = -15VVGS = 0Vf = 1MHZ; • Dynamic Parameters (Ta = 25°C Unless otherwise specified) | Hongjiacheng datasheet, p. 2 — • Dynamic Parameters (Ta=25°C Unless otherwise specified) |
| reverse transfer capacitance | — | 30 pF | — | VDS = -15VVGS = 0Vf = 1MHZ; • Dynamic Parameters (Ta = 25°C Unless otherwise specified) | Hongjiacheng datasheet, p. 2 — • Dynamic Parameters (Ta=25°C Unless otherwise specified) |
| gate charge | — | 4 nC | — | VGS = -15VVDS = -10VID = -2.6A; • Switching Parameters (Ta = 25°C Unless otherwise specified) | Hongjiacheng datasheet, p. 2 — • Switching Parameters (Ta=25°C Unless otherwise specified) |
| rise time | — | 4 ns | — | VGS = -10VVDS = -15VRGEN = 3.0ΩID = -1.0A; turn; • Switching Parameters (Ta = 25°C Unless otherwise specified) | Hongjiacheng datasheet, p. 2 — • Switching Parameters (Ta=25°C Unless otherwise specified) |
| fall time | — | 4 ns | — | VGS = -10VVDS = -15VRGEN = 3.0ΩID = -1.0A; turn; • Switching Parameters (Ta = 25°C Unless otherwise specified) | Hongjiacheng datasheet, p. 2 — • Switching Parameters (Ta=25°C Unless otherwise specified) |
Closest matches to HL2307
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Si2302CDS
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AO3407A
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MDD2301
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PMV65XPEA
4.8× higher rise time, 4.5× lower drain current, 4.2× higher fall time
Si2301CDS
8.8× higher rise time, 4.8× lower drain current, 2.5× higher fall time
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