Build with FDV301N — Datasheet Specs & AI Design Help

00 — Overview

What the FDV301N does

The FDV301N is an N-channel logic level enhancement mode field effect transistor designed for low voltage applications. It operates with a 25 V drain-source voltage, handles 0.22 A continuous current, and features a static drain-source on-resistance of 5 ohms at 2.7 V gate drive. This device eliminates the need for external bias resistors, allowing it to replace multiple NPN digital transistors with a single DMOS FET. Engineers typically use it in inverter circuits and other digital logic applications where very low gate drive requirements enable direct operation in 3 V systems.

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Start building with FDV301N → Every number above is cited straight from the datasheet — ask what they mean for your design, and the assistant answers from the same source documents.

01 — Key specifications

Datasheet parameters

Datasheet parameters for FDV301N
Parameter	Min	Typ	Max	Conditions	Source
output current	—	—	220 mA	id; Features	onsemi datasheet, p. 1 — Features
supply voltage range	—	—	25 V	vdss; ORDERING INFORMATION	onsemi datasheet, p. 2 — ORDERING INFORMATION
rds on	—	3.8 Ohm	—	VGS = 2.7 V, ID = 0.2 A, TA = 25 °C	onsemi datasheet, p. 2 — ON CHARACTERISTICS
forward voltage	800 mV	1.2 V	—	VGS = 0 V, IS = 0.29 A (Note 1); –; vsd; DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS	onsemi datasheet, p. 3 — DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
operating temperature	-55 °C	—	150 °C	TJ, TSTG Operating and Storage Temperature Range	onsemi datasheet, p. 2 — ORDERING INFORMATION
power dissipation	—	—	350 mW	pd; ORDERING INFORMATION	onsemi datasheet, p. 2 — ORDERING INFORMATION
forward current	—	290 mA	—	–; is; DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS	onsemi datasheet, p. 3 — DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
breakdown voltage ds	—	25 V	—	VDSS	onsemi datasheet, p. 1 — Features
drain current	—	220 mA	—	continuous	onsemi datasheet, p. 1 — Features
vgs threshold	700 mV	850 mV	1.06 V	VDS = VGS, I_D = 250 \mu A; v(th); ON CHARACTERISTICS	onsemi datasheet, p. 2 — ON CHARACTERISTICS
input capacitance	—	9.5 pF	—	VDS = 10 V, VGS = 0 V, f = 1.0 MHz; ciss; ON CHARACTERISTICS	onsemi datasheet, p. 3 — ON CHARACTERISTICS
output capacitance	—	6 pF	—	VDS = 10 V, VGS = 0 V, f = 1.0 MHz; coss; ON CHARACTERISTICS	onsemi datasheet, p. 3 — ON CHARACTERISTICS
reverse transfer capacitance	—	1.3 pF	—	VDS = 10 V, VGS = 0 V, f = 1.0 MHz; crss; ON CHARACTERISTICS	onsemi datasheet, p. 3 — ON CHARACTERISTICS
gate charge	—	600 pC	—	ID = 0.2 A, VDS = 5/10/15 V (Gate Charge Characteristics)	onsemi datasheet, p. 4
rise time	6 ns	—	15 ns	VDD = 6 V, ID = 0.5 A, VGS = 4.5 V, RGEN = 50 Ω; tr; SWITCHING CHARACTERISTICS (Note 1)	onsemi datasheet, p. 3 — SWITCHING CHARACTERISTICS (Note 1)
fall time	3.5 ns	—	8 ns	VDD = 6 V, ID = 0.5 A, VGS = 4.5 V, RGEN = 50 Ω; tf; SWITCHING CHARACTERISTICS (Note 1)	onsemi datasheet, p. 3 — SWITCHING CHARACTERISTICS (Note 1)
emitter base voltage	-300 mV	—	8 V	Gate-Source Voltage (VGSS) — MOSFET equivalent of emitter-base voltage	onsemi datasheet, p. 2 — ORDERING INFORMATION

02 — Alternatives

Closest matches to FDV301N

BSS123 4.0× higher breakdown voltage ds, 2.8× higher fall time, 2.3× higher gate charge

2N7002K 3.2× lower rds on, 3.2× higher input capacitance, 3.1× lower rise time

2N7002K-T1 3.2× lower rds on, 3.2× higher input capacitance, 3.1× lower rise time

DMG1012T 15.0× higher drain current, 12.7× lower rds on, 6.4× higher input capacitance

RK7002BM 4.9× higher fall time, 2.4× higher breakdown voltage ds, 2.2× lower rds on

RUM001L02T2CL 6.6× higher fall time, 2.9× lower forward current, 2.6× lower rise time

BSS138W 4.6× higher reverse transfer capacitance, 2.8× higher input capacitance, 2.4× higher fall time

RUM002N02T2L 7.7× higher reverse transfer capacitance, 4.8× lower rds on, 2.9× lower forward current

03 — FAQ

Frequently asked questions

What is the breakdown voltage ds at VDSS?

The breakdown voltage ds at VDSS is 25 V.

What is the continuous drain current for the FDV301N?

The continuous drain current is 220 mA.

What is the maximum emitter base voltage for the FDV301N?

The maximum emitter base voltage is 8 V, which corresponds to the Gate-Source Voltage (VGSS) for the MOSFET equivalent.

What is the fall time (tf) of the FDV301N?

The fall time is 8 ns at VDD = 6 V, ID = 0.5 A, VGS = 4.5 V, and RGEN = 50 Ω.

What is the forward current?

The forward current is 290 mA under DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS.

What is the forward voltage of the drain-source diode?

The forward voltage is 1.2 V at VGS = 0 V and IS = 0.29 A.

What is the gate charge of the FDV301N when ID = 0.2 A and VDS = 5/10/15 V?

The gate charge is 600 pC.

What is the input capacitance (Ciss) of the FDV301N?

The input capacitance is 9.5 pF at VDS = 10 V, VGS = 0 V, and f = 1.0 MHz.

What is the maximum operating temperature (TJ, TSTG) for the FDV301N?

The operating temperature (TJ, TSTG) is 150 °C.

What is the output capacitance (coss) of the FDV301N?

The output capacitance is 6 pF at VDS = 10 V, VGS = 0 V, and f = 1.0 MHz.

What is the output current (id) for the FDV301N?

The output current (id) is 220 mA.

What is the power dissipation (pd) under ORDERING INFORMATION conditions?

The power dissipation is 350 mW.