FDV301N — Datasheet Summary, Specs & Alternatives

01 — Overview

This datasheet covers the FDV301N, an N-Channel logic-level enhancement mode MOSFET from Fairchild Semiconductor. It serves as a digital FET designed to replace multiple NPN transistors in low-voltage applications by eliminating the need for bias resistors. Key parameters include a 25 V drain-source voltage rating, 0.22 A continuous current capability, and a typical on-resistance of 4 ohms at 2.7 V gate drive. The device features a threshold voltage below 1.06 V for direct 3V circuit operation and includes robust ESD protection rated above 6 kV.

02 — Key specifications

Datasheet parameters

Parameter	Min	Typ	Max	Conditions
output current	—	—	1 µA	VCC = 20 V, VI = 0 V
supply voltage range	—	500 mV	500 mV	VCC = 5 V, IO = 10 μA
rds on	—	3.1 Ohm	—
forward voltage	800 mV	1.2 V	1.2 V	VGS = 0 V, IS = 0.29 A (Note 1); –
operating temperature	-55 °C	—	150 °C
power dissipation	—	—	350 mW
breakdown voltage ds	—	25 V	—
drain current	—	220 mA	—
vgs threshold	700 mV	850 mV	1.06 V	V_{DS} = V_{GS}, I_D = 250 \mu A
input capacitance	—	9.5 pF	—	VDS = 10 V, VGS = 0 V, f = 1.0 MHz
output capacitance	—	6 pF	—	VDS = 10 V, VGS = 0 V, f = 1.0 MHz
reverse transfer capacitance	—	1.3 pF	—	VDS = 10 V, VGS = 0 V, f = 1.0 MHz
gate charge	—	600 pC	—
rise time	6 ns	—	15 ns	VDD = 6 V, ID = 0.5 A, VGS = 4.5 V, RGEN = 50 Ω
fall time	3.5 ns	—	8 ns	VDD = 6 V, ID = 0.5 A, VGS = 4.5 V, RGEN = 50 Ω

03 — Alternatives

Closest matches to FDV301N

RK7002BM 4.9× higher fall time, 2.4× higher breakdown voltage ds, 2.1× lower rise time

RUM001L02T2CL 6.6× higher fall time, 2.6× lower rise time, 2.3× lower power dissipation

2N7002K 3.2× higher input capacitance, 3.1× lower rise time, 2.6× lower rds on

DMG1012T-13 10.3× lower rds on, 6.4× higher input capacitance, 4.1× higher reverse transfer capacitance

RUM002N02T2L 7.7× higher reverse transfer capacitance, 3.9× lower rds on, 2.6× higher input capacitance

FDV303N 9.4× lower rds on, 6.9× higher reverse transfer capacitance, 5.3× higher input capacitance

2N7002-13-F 5.0× higher drain current, 3.5× lower rise time, 2.8× higher breakdown voltage ds

BSS138PS 4.0× higher input capacitance, 3.5× lower rise time, 3.1× lower rds on

04 — FAQ

Frequently asked questions

What is the breakdown voltage ds for the FDV301N?

The breakdown voltage ds is 25 V.

What is the drain current of the FDV301N?

The drain current is 220 mA.

What is the fall time of the FDV301N?

The fall time is 8 ns at VDD = 6 V, ID = 0.5 A, VGS = 4.5 V, and RGEN = 50 Ω.

What is the forward voltage when VGS = 0 V and IS = 0.29 A?

The forward voltage is 1.2 V.

What is the gate charge of the FDV301N?

The gate charge is 600 pC.

What is the input capacitance of the FDV301N?

The input capacitance is 9.5 pF at VDS = 10 V, VGS = 0 V, and f = 1.0 MHz.

What is the maximum operating temperature for the FDV301N?

The maximum operating temperature is 150 °C.

What is the output capacitance of the FDV301N?

The output capacitance is 6 pF at VDS = 10 V, VGS = 0 V, and f = 1.0 MHz.