RUM002N02T2L — Datasheet Summary, Specs & Alternatives

01 — Overview

This ROHM datasheet covers the RUM002N02T2L, an N-channel 20V small-signal MOSFET in a SOT-723 package. It details electrical characteristics for low-voltage switching applications. Key parameters include a maximum drain-source voltage of 20V, continuous current of ±200mA, and ultra-low on-resistance ranging from 0.8Ω to 4.8Ω depending on gate voltage. The device features a threshold voltage between 0.3V and 1.0V, allowing drive at just 1.2V. It also supports pulsed currents up to 400mA and operates within a junction temperature range of -55°C to +150°C while being RoHS compliant.

02 — Key specifications

Datasheet parameters

Parameter	Min	Typ	Max	Conditions
rds on	—	800 mOhm	1.2 Ohm	VGS = 2.5V, ID = 200mA
forward voltage	—	—	1.2 V	VGS = 0V, IS = 100mA
operating temperature	-55 °C	—	150 °C
power dissipation	—	—	150 mW
forward current	—	—	100 mA	Ta = 25°C
reverse leakage current	—	—	1 µA	VDS = 20V, VGS = 0V
breakdown voltage ds	—	—	20 V
drain current	—	200 mA	—
vgs threshold	300 mV	—	1 V	VDS = 10V, ID = 1mA
input capacitance	—	25 pF	—	VGS = 0V
output capacitance	—	10 pF	—	VDS = 10V
reverse transfer capacitance	—	10 pF	—	f = 1MHz
rise time	—	10 ns	—	ID = 150mA
fall time	—	10 ns	—	RG = 10Ω

03 — Alternatives

Closest matches to RUM002N02T2L

DMG1012T-13 10.0× lower reverse leakage current, 3.1× higher drain current, 2.7× lower rds on

FDV303N 2.8× higher output capacitance, 2.5× higher drain current, 2.4× lower rds on

RUM001L02T2CL 5.9× lower reverse transfer capacitance, 3.8× higher fall time, 3.5× lower input capacitance

BSS138PS 3.3× lower rise time, 3.0× higher breakdown voltage ds, 2.5× lower fall time

FDV301N 7.7× lower reverse transfer capacitance, 3.9× higher rds on, 2.6× lower input capacitance

BSS138-7-F 3.8× higher breakdown voltage ds, 2.5× higher output capacitance, 2.0× higher input capacitance

RK7002BM 5.0× lower reverse transfer capacitance, 3.0× higher breakdown voltage ds, 2.8× higher fall time

2N7002K 3.4× lower reverse transfer capacitance, 3.0× higher breakdown voltage ds, 2.9× lower rise time

04 — FAQ

Frequently asked questions

What is the breakdown voltage ds for the RUM002N02T2L?

The breakdown voltage ds is 20 V.

What is the drain current of the RUM002N02T2L?

The drain current is 200 mA.

What is the fall time when RG = 10Ω?

The fall time is 10 ns when RG = 10Ω.

What is the forward current at Ta = 25°C?

The forward current is 100 mA at Ta = 25°C.

What is the forward voltage when VGS = 0V and IS = 100mA?

The forward voltage is 1.2 V at VGS = 0V and IS = 100mA.

What is the input capacitance of the RUM002N02T2L when VGS = 0V?

The input capacitance is 25 pF at VGS = 0V.

What is the maximum operating temperature for the RUM002N02T2L?

The maximum operating temperature is 150 °C.

What is the output capacitance of the RUM002N02T2L when VDS = 10V?

The output capacitance is 10 pF at VDS = 10V.