Build with RUM002N02T2L — Datasheet Specs & AI Design Help

00 — Overview

What the RUM002N02T2L does

The RUM002N02 is an N-channel 20V 200mA small signal MOSFET available in the SOT-723 package. It features an ultra-low 1.2V drive voltage requirement and operates across a junction temperature range of -55 to +150°C. Key electrical characteristics include a maximum drain-source on-resistance of 1.2Ω, a breakdown voltage of 20V, and a power dissipation of 150mW. This component is designed for switching applications where space efficiency and low drive voltage are critical. The device is RoHS compliant with lead-free plating and supports pulse currents up to 400mA.

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Start building with RUM002N02T2L → Every number above is cited straight from the datasheet — ask what they mean for your design, and the assistant answers from the same source documents.

01 — Key specifications

Datasheet parameters

Datasheet parameters for RUM002N02T2L
Parameter	Min	Typ	Max	Conditions	Source
rds on	—	800 mOhm	1.2 Ohm	VGS = 2.5V, ID = 200mA; (on); ☑Inner circuit	ROHM datasheet, p. 2 — ☑Inner circuit
operating temperature	-55 °C	—	150 °C	Operating junction and storage temperature range, Tstg	ROHM datasheet, p. 1 — ☑Inner circuit
power dissipation	—	—	150 mW	☑Inner circuit	ROHM datasheet, p. 1 — ☑Inner circuit
breakdown voltage ds	—	—	20 V	☑Inner circuit	ROHM datasheet, p. 1 — ☑Inner circuit
drain current	-200 mA	—	200 mA	continuous; ☑Inner circuit	ROHM datasheet, p. 1 — ☑Inner circuit
vgs threshold	300 mV	—	1 V	VDS = 10V, ID = 1mA; gate(th); ☑Inner circuit	ROHM datasheet, p. 2 — ☑Inner circuit
input capacitance	—	25 pF	—	VGS = 0V	ROHM datasheet, p. 3
output capacitance	—	10 pF	—	VDS = 10V	ROHM datasheet, p. 3
reverse transfer capacitance	—	10 pF	—	f = 1MHz	ROHM datasheet, p. 3
rise time	—	10 ns	—	ID = 150mA	ROHM datasheet, p. 3
fall time	—	10 ns	—	RG = 10Ω	ROHM datasheet, p. 3

02 — Alternatives

Closest matches to RUM002N02T2L

BSS138W 4.4× higher rds on, 2.5× higher breakdown voltage ds, 2.0× higher power dissipation

DMG1012T 10.0× lower reverse leakage current, 2.7× lower rds on, 2.4× higher input capacitance

FDV303N 2.8× higher output capacitance, 2.4× lower rds on, 2.3× higher power dissipation

RUM001L02T2CL 5.9× lower reverse transfer capacitance, 3.8× higher fall time, 3.5× lower input capacitance

FDV301N 7.7× lower reverse transfer capacitance, 4.7× higher rds on, 2.9× higher forward current

HJ8205 16.4× higher output capacitance, 13.8× higher reverse transfer capacitance, 8.3× higher power dissipation

Si2302CDS 17.8× lower rds on, 12.3× higher input capacitance, 5.7× higher power dissipation

2SK3018 10.0× higher rds on, 8.0× higher fall time, 3.5× higher rise time

03 — FAQ

Frequently asked questions

What is the breakdown voltage ds for the inner circuit?

The breakdown voltage ds is 20 V for the inner circuit.

What is the continuous drain current of the inner circuit?

The continuous drain current of the inner circuit is 200 mA.

What is the fall time when RG = 10Ω?

The fall time is 10 ns when RG = 10Ω.

What is the input capacitance of the RUM002N02T2L when VGS = 0V?

The input capacitance is 25 pF when VGS = 0V.

What is the operating junction and storage temperature range, Tstg?

The operating junction and storage temperature range, Tstg, is 150 °C.

What is the output capacitance when VDS = 10V?

The output capacitance is 10 pF at VDS = 10V.

What is the power dissipation of the inner circuit?

The power dissipation of the inner circuit is 150 mW.

What is the maximum on-resistance (rds on) for the inner circuit of the RUM002N02T2L when VGS = 2.5V and ID = 200mA?

The maximum on-resistance is 800 mOhm.

What is the reverse transfer capacitance of the RUM002N02T2L at f = 1MHz?

The reverse transfer capacitance is 10 pF at f = 1MHz.

What is the rise time when ID = 150mA?

The rise time is 10 ns when ID = 150mA.

What is the gate threshold voltage (VGS(th)) for the RUM002N02T2L?

The gate threshold voltage is 1 V when VDS = 10V and ID = 1mA.