BSS138
Full part number: BSS138PS
Every spec below is cited to the manufacturer datasheet. Compare the closest alternatives, then ask the assistant what it means for your design.
What the BSS138 does
The BSS138PS is a 60 V, 320 mA dual N-channel Trench MOSFET in an SOT363 package. It features logic-level compatibility, very fast switching, and AEC-Q101 qualification. Key parameters include a 60 V drain-source voltage, ±20 V gate-source voltage, 320 mA continuous drain current, and 0.9 Ω typical on-state resistance. This component serves as a relay driver, high-speed line driver, low-side load switch, or general switching circuit element.
Datasheet parameters
| Parameter | Min | Typ | Max | Conditions | Source |
|---|---|---|---|---|---|
| rds on | — | 900 mOhm | 1.6 Ohm | Tj = 25 °C; VGS = 10 V; ID = 300 mA; rdson | Nexperia datasheet, p. 1 — Table 1. Quick reference data |
| operating temperature (abs max) | -55 °C | — | 150 °C | tamb; Per device | Nexperia datasheet, p. 3 — Table 5. Limiting values ...continued |
| power dissipation (abs max) | — | — | 280 mW | [2]; ptot; Limiting values ... | Nexperia datasheet, p. 3 — Table 5. Limiting values ...continued |
| reverse leakage current | — | — | 1 µA | Tj = 25 °C; idss; Static characteristics | Nexperia datasheet, p. 6 — Table 7. Characteristics |
| breakdown voltage ds | 60 V | — | — | ID = 10 μA; VGS = 0 V; v(br); Static characteristics | Nexperia datasheet, p. 6 — Table 7. Characteristics |
| drain current | — | — | 320 mA | Tamb = 25 °C; VGS = 10 V; id | Nexperia datasheet, p. 1 — Table 1. Quick reference data |
| vgs threshold | 900 mV | 1.2 V | 1.5 V | ID = 250 μA; VDS = VGS; vgs(th); Static characteristics | Nexperia datasheet, p. 6 — Table 7. Characteristics |
| input capacitance | — | 38 pF | 50 pF | VGS = 0 V; VDS = 10 V; ; ciss; Dynamic characteristics | Nexperia datasheet, p. 6 — Table 7. Characteristics |
| output capacitance | — | 7 pF | — | f = 1 MHz; coss; Dynamic characteristics | Nexperia datasheet, p. 6 — Table 7. Characteristics |
| reverse transfer capacitance | — | 4 pF | — | crss; Dynamic characteristics | Nexperia datasheet, p. 6 — Table 7. Characteristics |
| gate charge | — | 720 pC | 800 pC | ID = 300 mA; ; qg(tot); Dynamic characteristics | Nexperia datasheet, p. 6 — Table 7. Characteristics |
| rise time | — | 3 ns | — | RL = 250 Ω; ; tr; Dynamic characteristics | Nexperia datasheet, p. 6 — Table 7. Characteristics |
| fall time | — | 4 ns | — | RG = 6 Ω; tf; Dynamic characteristics | Nexperia datasheet, p. 6 — Table 7. Characteristics |
Closest matches to BSS138
Frequently asked questions
What is the breakdown voltage ds for the BSS138PS?
The breakdown voltage ds is 60 V at ID = 10 μA; VGS = 0 V; v(br); Static characteristics.
What is the drain current (id) when Tamb = 25 °C and VGS = 10 V?
The drain current is 320 mA.
What is the fall time (tf) when RG = 6 Ω?
The fall time is 4 ns.
What is the total gate charge (Qg) for the BSS138PS when ID = 300 mA?
The total gate charge (Qg) is 720 pC when ID = 300 mA.
What is the input capacitance (Ciss) of the BSS138PS?
The input capacitance is 38 pF at VGS = 0 V and VDS = 10 V.
What is the maximum operating temperature (tamb) per device?
The operating temperature is 150 °C.
What is the output capacitance (Coss) of the BSS138PS at f = 1 MHz?
The output capacitance (Coss) is 7 pF at f = 1 MHz.
What is the power dissipation of the BSS138PS?
The power dissipation is 280 mW.
What is the maximum on-resistance (rds on) of the BSS138PS at Tj = 25 °C, VGS = 10 V, and ID = 300 mA?
The rds on is 900 mOhm.
What is the reverse leakage current (idss) at Tj = 25 °C?
The reverse leakage current is 1 µA at Tj = 25 °C.
What is the reverse transfer capacitance (crss) under Dynamic characteristics?
The reverse transfer capacitance (crss) is 4 pF under Dynamic characteristics.
What is the rise time (tr) when RL = 250 Ω?
The rise time is 3 ns.