transistors-thyristors

BSS138

Full part number: BSS138-7-F

Key datasheet specifications and the closest alternatives, ranked by parametric similarity and grounded in the manufacturer datasheet.

01 — Overview

This Diodes Incorporated datasheet covers the BSS138-7-F, an N-channel enhancement mode MOSFET in SOT23 packaging. Designed for high-efficiency power management like load switches, it features low on-resistance (up to 3.5Ω), a drain-source breakdown voltage of 50V, and continuous current handling of 200mA. The device operates between -55°C and +150°C with fast switching speeds and is fully RoHS compliant.

02 — Key specifications

Datasheet parameters

ParameterMinTypMaxConditions
rds on — 1.4 Ohm 3.5 Ohm VGS = 10V, ID = 0.22A
operating temperature -55 °C — 150 °C
power dissipation — 300 mW —
reverse leakage current — — 500 nA VDS = 50V, VGS = 0V
breakdown voltage ds 50 V 75 V — VGS = 0V, ID = 250µA
drain current — — 200 mA
vgs threshold 500 mV 1.2 V 1.5 V VDS = VGS, ID = 250µA
input capacitance — — 50 pF VDS = 10V, VGS = 0V, f = 1.0MHz
output capacitance — — 25 pF VDS = 10V, VGS = 0V, f = 1.0MHz
reverse transfer capacitance — — 8 pF VDS = 10V, VGS = 0V, f = 1.0MHz
collector emitter voltage — 50 V —
03 — Alternatives

Closest matches to BSS138

2N7002K 6.0× lower output capacitance, 2.8× lower reverse transfer capacitance, 2.0× higher reverse leakage current
BSS138PS 3.6× lower output capacitance, 2.0× higher reverse leakage current, 2.0× lower reverse transfer capacitance
FDV303N 4.2× lower rds on, 3.0× lower breakdown voltage ds, 2.5× higher drain current
2N7002K-T1 4.2× lower output capacitance, 3.2× lower reverse transfer capacitance, 2.0× higher reverse leakage current
BSS138L 2.5× higher rds on, 1.9× lower reverse transfer capacitance, 1.5× lower breakdown voltage ds
RUM002N02T2L 3.8× lower breakdown voltage ds, 2.5× lower output capacitance, 2.0× lower input capacitance
T2N7002BK 6.2× lower reverse transfer capacitance, 4.5× lower output capacitance, 2.0× higher drain current
2N7002 3.7× lower output capacitance, 2.8× higher power dissipation, 2.3× lower reverse transfer capacitance
04 — FAQ

Frequently asked questions

What is the breakdown voltage ds of the BSS138-7-F?

The breakdown voltage ds is 75 V at VGS = 0V, ID = 250µA.

What is the collector-emitter voltage of the BSS138-7-F?

The collector-emitter voltage is 50 V.

What is the drain current of the BSS138-7-F?

The drain current is 200 mA.

What is the input capacitance of the BSS138-7-F?

The input capacitance is 50 pF at VDS = 10V, VGS = 0V, f = 1.0MHz.

What is the maximum operating temperature for the BSS138-7-F?

The maximum operating temperature is 150 °C.

What is the output capacitance of the BSS138-7-F?

The output capacitance is 25 pF at VDS = 10V, VGS = 0V, f = 1.0MHz.

What is the power dissipation of the BSS138-7-F?

The power dissipation is 300 mW.

What is the maximum on-resistance (rds on) of the BSS138-7-F?

The on-resistance is 1.4 Ohm at VGS = 10V and ID = 0.22A.

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