transistors-thyristors

RK7002

Full part number: RK7002BM

Key datasheet specifications and the closest alternatives, ranked by parametric similarity and grounded in the manufacturer datasheet.

01 — Overview

This ROHM datasheet covers the RK7002BM, an N-channel 60V small signal MOSFET in SOT-23 packaging. It defines absolute maximum ratings and electrical characteristics for low-side switching and relay driver applications. Key parameters include a 60V drain-source breakdown voltage, 250mA continuous current, and 2.4Ω typical on-state resistance at 4V gate drive. The device features ultra-low voltage drive capability down to 2.5V, very fast switching speeds, and ESD protection up to 2kV HBM. It is also Pb-free, RoHS compliant, and halogen free.

02 — Key specifications

Datasheet parameters

Parameter	Min	Typ	Max	Conditions
rds on	—	1.7 Ohm	2.4 Ohm	VGS = 10V, ID = 250mA
forward voltage	—	—	1.2 V	VGS = 0V, IS = 250mA
operating temperature	-55 °C	—	150 °C
power dissipation	—	—	350 mW
forward current	—	—	150 mA	Ta = 25°C
reverse leakage current	—	—	1 µA	VDS = 60V, VGS = 0V
breakdown voltage ds	—	—	60 V
drain current	—	250 mA	—
vgs threshold	1 V	—	2.3 V	VDS = 10V, ID = 1mA
input capacitance	—	15 pF	—	VGS = 0V
output capacitance	—	4.5 pF	—	VDS = 25V
reverse transfer capacitance	—	2 pF	—	f = 1MHz
rise time	—	5 ns	—	ID = 100mA
fall time	—	28 ns	—	RG = 10Ω

03 — Alternatives

Closest matches to RK7002

2N7002K 2.8× lower fall time, 2.0× higher input capacitance, 1.6× lower forward voltage

T2N7002BK 1.7× higher input capacitance, 1.6× lower fall time, 1.6× lower rds on

2N7002-13-F 5.0× lower fall time, 4.0× higher drain current, 2.4× higher output capacitance

BSS138PS 7.0× lower fall time, 2.5× higher input capacitance, 2.0× higher reverse transfer capacitance

2N7002K-T1 2.0× higher input capacitance, 1.3× higher output capacitance, 1.2× higher reverse transfer capacitance

RUM001L02T2CL 3.0× lower breakdown voltage ds, 2.5× lower vgs threshold, 2.5× lower drain current

FDV301N 4.9× lower fall time, 2.4× lower breakdown voltage ds, 2.1× higher rise time

2N7002 2.4× higher power dissipation, 2.1× higher input capacitance, 1.8× higher reverse transfer capacitance

04 — FAQ

Frequently asked questions

What is the breakdown voltage ds for the RK7002BM?

The breakdown voltage ds is 60 V.

What is the drain current of the RK7002BM?

The drain current is 250 mA.

What is the fall time when RG = 10Ω?

The fall time is 28 ns when RG = 10Ω.

What is the forward current of the RK7002BM at Ta = 25°C?

The forward current is 150 mA at Ta = 25°C.

What is the forward voltage of the RK7002BM when VGS = 0V and IS = 250mA?

The forward voltage is 1.2 V.

What is the input capacitance of the RK7002BM when VGS = 0V?

The input capacitance is 15 pF at VGS = 0V.

What is the maximum operating temperature for the RK7002BM?

The operating temperature is 150 °C.

What is the output capacitance of the RK7002BM at VDS = 25V?

The output capacitance is 4.5 pF at VDS = 25V.

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