Build with RK7002 — Datasheet Specs & AI Design Help

00 — Overview

What the RK7002 does

The RK7002BM is an N-channel 60V 250mA small signal MOSFET available in the SOT-23 package. It features a maximum on-state resistance of 2.4Ω, a drain-source breakdown voltage of 60V, and a gate threshold voltage ranging from 1.0V to 2.4V. The device supports ultra-low voltage drive at 2.5V and includes ESD protection up to 2kV. It operates across a junction temperature range of -55°C to +150°C. Engineers typically use this component in switching circuits, low-side load switches, and relay driver applications where fast switching speeds and compact packaging are required.

Next step

Start building with RK7002 → Every number above is cited straight from the datasheet — ask what they mean for your design, and the assistant answers from the same source documents.

01 — Key specifications

Datasheet parameters

Datasheet parameters for RK7002
Parameter	Min	Typ	Max	Conditions	Source
rds on	—	1.7 Ohm	2.4 Ohm	VGS = 10V, ID = 250mA; (on); ●Inner circuit	ROHM datasheet, p. 2 — ●Inner circuit
operating temperature	-55 °C	—	150 °C		ROHM datasheet, p. 1 — ●Inner circuit
power dissipation	—	—	350 mW	●Inner circuit	ROHM datasheet, p. 1 — ●Inner circuit
forward current	—	—	150 mA	Ta = 25°C; continuous	ROHM datasheet, p. 3
breakdown voltage ds	—	—	60 V	●Inner circuit	ROHM datasheet, p. 1 — ●Inner circuit
drain current	—	250 mA	—		ROHM datasheet, p. 1 — ●Inner circuit
vgs threshold	1 V	—	2.3 V	VDS = 10V, ID = 1mA; gate(th); ●Inner circuit	ROHM datasheet, p. 2 — ●Inner circuit
input capacitance	—	15 pF	—	VGS = 0V	ROHM datasheet, p. 3
output capacitance	—	4.5 pF	—	VDS = 25V	ROHM datasheet, p. 3
reverse transfer capacitance	—	2 pF	—	f = 1MHz	ROHM datasheet, p. 3
fall time	—	28 ns	—	RG = 10Ω	ROHM datasheet, p. 3

02 — Alternatives

Closest matches to RK7002

2N7002K 2.8× lower fall time, 2.0× higher input capacitance, 1.6× lower forward voltage

2N7002K-T1 2.8× lower fall time, 2.0× higher input capacitance, 1.6× lower forward voltage

BSS123 10.0× lower reverse leakage current, 3.5× higher rds on, 1.9× higher power dissipation

T2N7002BK 3.2× higher operating temperature, 1.7× higher input capacitance, 1.6× lower fall time

RUM001L02T2CL 3.0× lower breakdown voltage ds, 2.5× lower vgs threshold, 2.3× lower power dissipation

2N7002 5.0× lower fall time, 2.4× higher power dissipation, 2.1× higher input capacitance

BSS138PS 7.0× lower fall time, 2.5× higher input capacitance, 2.0× higher reverse transfer capacitance

BSS138W 3.6× higher rise time, 3.0× higher reverse transfer capacitance, 2.9× higher output capacitance

03 — FAQ

Frequently asked questions

What is the breakdown voltage ds for the RK7002BM?

The breakdown voltage ds is 60 V under the condition of the inner circuit.

What is the drain current of the RK7002BM?

The drain current is 250 mA.

What is the fall time when RG = 10Ω?

The fall time is 28 ns when RG = 10Ω.

What is the forward current of the RK7002BM at Ta = 25°C under continuous conditions?

The forward current is 150 mA.

What is the input capacitance of the RK7002BM when VGS = 0V?

The input capacitance is 15 pF when VGS = 0V.

What is the maximum operating temperature for the RK7002BM?

The operating temperature is 150 °C.

What is the output capacitance of the RK7002BM when VDS = 25V?

The output capacitance is 4.5 pF at VDS = 25V.

What is the power dissipation of the RK7002BM?

The power dissipation is 350 mW for the inner circuit.

What is the on-resistance (rds on) of the RK7002BM with VGS = 10V and ID = 250mA?

The on-resistance is 1.7 Ohm.

What is the reverse transfer capacitance of the RK7002BM at f = 1MHz?

The reverse transfer capacitance is 2 pF at f = 1MHz.

What is the gate threshold voltage (VGS(th)) of the RK7002BM?

The gate threshold voltage is 2.3 V at VDS = 10V and ID = 1mA.