RUM001L02T2CL
Every spec below is cited to the manufacturer datasheet. Compare the closest alternatives, then ask the assistant what it means for your design.
What the RUM001L02T2CL does
The RUM001L02 is an N-channel 20V small signal MOSFET available in the RUM001L02x family, packaged in SOT-723 or SC-105AA. It features a 20V drain-source breakdown voltage, 100mA continuous drain current, and a maximum on-state resistance of 3.8Ω at 1.8V gate drive. The device includes a built-in gate-source protection diode and operates across a junction temperature range of -55 to +150°C. Its low 1.2V drive requirement makes it ideal for portable equipment, while the simple drive circuit design supports efficient switching applications.
Datasheet parameters
| Parameter | Min | Typ | Max | Conditions | Source |
|---|---|---|---|---|---|
| rds on | — | 2.5 Ohm | 3.5 Ohm | VGS = 4.5V, ID = 100mA; (on); ●Inner circuit | ROHM datasheet, p. 2 — ●Inner circuit |
| operating temperature | -55 °C | — | 150 °C | ROHM datasheet, p. 1 — ●Inner circuit | |
| power dissipation | — | — | 150 mW | ●Inner circuit | ROHM datasheet, p. 1 — ●Inner circuit |
| forward current | — | — | 100 mA | Ta = 25°C; continuous | ROHM datasheet, p. 3 |
| reverse leakage current | — | — | 1 µA | VDS = 20V, VGS = 0V; zero; ●Inner circuit | ROHM datasheet, p. 2 — ●Inner circuit |
| breakdown voltage ds | — | — | 20 V | ●Inner circuit | ROHM datasheet, p. 1 — ●Inner circuit |
| drain current | -100 mA | — | 100 mA | continuous; ●Inner circuit | ROHM datasheet, p. 1 — ●Inner circuit |
| vgs threshold | 300 mV | — | 1 V | VDS = 10V, ID = 100µA; gate(th); ●Inner circuit | ROHM datasheet, p. 2 — ●Inner circuit |
| input capacitance | — | 7.1 pF | — | VGS = 0V | ROHM datasheet, p. 3 |
| output capacitance | — | 3.3 pF | — | VDS = 10V | ROHM datasheet, p. 3 |
| reverse transfer capacitance | — | 1.7 pF | — | f = 1MHz | ROHM datasheet, p. 3 |
| rise time | — | 4 ns | — | ID = 50mA | ROHM datasheet, p. 3 |
| fall time | — | 38 ns | — | RG = 10Ω | ROHM datasheet, p. 3 |
Closest matches to RUM001L02T2CL
Frequently asked questions
What is the breakdown voltage for the inner circuit?
The breakdown voltage is 20 V for the inner circuit.
What is the continuous drain current for the inner circuit of the RUM001L02T2CL?
The continuous drain current for the inner circuit is 100 mA.
What is the fall time when RG = 10Ω?
The fall time is 38 ns.
What is the forward current rating for the RUM001L02T2CL at Ta = 25°C; continuous?
The forward current is 100 mA.
What is the input capacitance of the RUM001L02T2CL when VGS = 0V?
The input capacitance is 7.1 pF at VGS = 0V.
What is the maximum operating temperature for the RUM001L02T2CL?
The maximum operating temperature is 150 °C.
What is the output capacitance of the RUM001L02T2CL when VDS = 10V?
The output capacitance is 3.3 pF at VDS = 10V.
What is the power dissipation of the inner circuit?
The power dissipation is 150 mW.
What is the on-resistance (rds on) of the RUM001L02T2CL at VGS = 4.5V and ID = 100mA?
The on-resistance is 2.5 Ohm.
What is the reverse leakage current of the RUM001L02T2CL when VDS = 20V and VGS = 0V?
The reverse leakage current is 1 µA.
What is the reverse transfer capacitance at f = 1MHz?
The reverse transfer capacitance is 1.7 pF at f = 1MHz.
What is the rise time when ID = 50mA?
The rise time is 4 ns.