transistors-thyristors

RUM001L02T2CL

Key datasheet specifications and the closest alternatives, ranked by parametric similarity and grounded in the manufacturer datasheet.

01 — Overview

This ROHM datasheet covers the RUM001L02T2CL, an N-channel 20V small signal MOSFET in SC-105AA packaging. It provides electrical specifications and application details for portable electronics requiring low-voltage drive. Key parameters include a 20V drain-source voltage rating, 100mA continuous current, 150mW power dissipation, and 3.5Ω typical on-resistance at 4.5V gate drive. The device features built-in G-S protection and supports operation from -55°C to +150°C.

02 — Key specifications

Datasheet parameters

ParameterMinTypMaxConditions
rds on — 2.5 Ohm 3.5 Ohm VGS = 4.5V, ID = 100mA
forward voltage — — 1.2 V VGS = 0V, IS = 100mA
operating temperature -55 °C — 150 °C
power dissipation — — 150 mW
forward current — — 100 mA Ta = 25°C
reverse leakage current — — 1 µA VDS = 20V, VGS = 0V
breakdown voltage ds — — 20 V
drain current — 100 mA —
vgs threshold 300 mV — 1 V VDS = 10V, ID = 100µA
input capacitance — 7.1 pF — VGS = 0V
output capacitance — 3.3 pF — VDS = 10V
reverse transfer capacitance — 1.7 pF — f = 1MHz
rise time — 4 ns — ID = 50mA
fall time — 38 ns — RG = 10Ω
03 — Alternatives

Closest matches to RUM001L02T2CL

RK7002BM 3.0× higher breakdown voltage ds, 2.5× higher vgs threshold, 2.5× higher drain current
FDV301N 6.6× lower fall time, 2.6× higher rise time, 2.3× higher power dissipation
RUM002N02T2L 5.9× higher reverse transfer capacitance, 3.8× lower fall time, 3.5× higher input capacitance
2N7002-13-F 10.0× higher drain current, 6.8× lower fall time, 3.5× higher breakdown voltage ds
2N7002K 4.2× higher input capacitance, 3.8× lower fall time, 3.8× higher drain current
AO3400A 9.5× lower fall time, 9.3× higher power dissipation, 1.7× lower forward voltage
DMG1012T-13 10.0× lower reverse leakage current, 8.5× higher input capacitance, 8.3× lower rds on
FDV303N 8.5× higher output capacitance, 7.6× lower rds on, 7.0× higher input capacitance
04 — FAQ

Frequently asked questions

What is the breakdown voltage ds?

The breakdown voltage ds is 20 V.

What is the drain current?

The drain current is 100 mA.

What is the fall time when RG = 10Ω?

The fall time is 38 ns.

What is the forward current of the RUM001L02T2CL at Ta = 25°C?

The forward current is 100 mA at Ta = 25°C.

What is the forward voltage of the RUM001L02T2CL when VGS = 0V and IS = 100mA?

The forward voltage is 1.2 V.

What is the input capacitance of the RUM001L02T2CL when VGS = 0V?

The input capacitance is 7.1 pF at VGS = 0V.

What is the maximum operating temperature for the RUM001L02T2CL?

The maximum operating temperature is 150 °C.

What is the output capacitance of the RUM001L02T2CL when VDS = 10V?

The output capacitance is 3.3 pF at VDS = 10V.

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