transistors thyristors

BSS138W

Every spec below is cited to the manufacturer datasheet. Pick your exact ordering code, compare the closest alternatives, then ask the assistant what it means for your design.

00 — Overview

What the BSS138W family does

The BSS138W is an N-channel MOSFET in the SOT-323 package designed as a voltage-controlled small signal switch. It handles a drain-source voltage of 50 V and a drain current of 0.22 A, featuring an on-resistance under 3.5 Ω at 10 V gate drive. This component supports fast switching speeds and direct logic-level interface for TTL/CMOS systems. Typical applications include battery-operated systems and solid-state relays. The device operates across a junction temperature range of -55 to +150 °C and meets RoHS compliance standards.

Next step
Start building with BSS138W → Every number above is cited straight from the datasheet — ask what they mean for your design, and the assistant answers from the same source documents.
01 — Key specifications

BSS138W datasheet parameters

ParameterMinTypMaxConditionsSource
rds on — — 3.5 Ohm VGS = 10V, ID = 0.22A; (on); ☑ Ordering Information Hongjiacheng datasheet, p. 2 — ☑ Ordering Information
forward voltage — — 1.4 V IS = 0.44A, VGS = 10V; ☑ Ordering Information Hongjiacheng datasheet, p. 2 — ☑ Ordering Information
operating temperature (abs max) -55 °C — 150 °C Hongjiacheng datasheet, p. 1 — • Maximum Ratings (Ta=25°C Unless otherwise specified)
power dissipation (abs max) — — 300 mW • Maximum Ratings (Ta = 25°C Unless otherwise specified) Hongjiacheng datasheet, p. 1 — • Maximum Ratings (Ta=25°C Unless otherwise specified)
reverse leakage current — — 500 nA VDS = 50V, VGS = 0V; zero; ☑ Ordering Information Hongjiacheng datasheet, p. 2 — ☑ Ordering Information
breakdown voltage ds 50 V — — VGS = 0V, ID = 250μA; ☑ Ordering Information Hongjiacheng datasheet, p. 2 — ☑ Ordering Information
drain current (abs max) — — 220 mA • Maximum Ratings (Ta = 25°C Unless otherwise specified) Hongjiacheng datasheet, p. 1 — • Maximum Ratings (Ta=25°C Unless otherwise specified)
vgs threshold 700 mV — 1.5 V VDS = VGS, ID = 250μA; gate(th); ☑ Ordering Information Hongjiacheng datasheet, p. 2 — ☑ Ordering Information
input capacitance — 27 pF — VDS = 25VVGS = 0Vf = 1MHZ; • Dynamic Parameters (Ta = 25°C Unless otherwise specified) Hongjiacheng datasheet, p. 2 — • Dynamic Parameters (Ta=25°C Unless otherwise specified)
output capacitance — 13 pF — VDS = 25VVGS = 0Vf = 1MHZ; • Dynamic Parameters (Ta = 25°C Unless otherwise specified) Hongjiacheng datasheet, p. 2 — • Dynamic Parameters (Ta=25°C Unless otherwise specified)
reverse transfer capacitance — 6 pF — VDS = 25VVGS = 0Vf = 1MHZ; • Dynamic Parameters (Ta = 25°C Unless otherwise specified) Hongjiacheng datasheet, p. 2 — • Dynamic Parameters (Ta=25°C Unless otherwise specified)
rise time — — 18 ns VDD = 30VID = 0.29ARG = 6.0ΩVGS = 10V; turn; • Switching Parameters (Ta = 25°C Unless otherwise specified) Hongjiacheng datasheet, p. 2 — • Switching Parameters (Ta=25°C Unless otherwise specified)
fall time — — 14 ns VDD = 30VID = 0.29ARG = 6.0ΩVGS = 10V; turn; • Switching Parameters (Ta = 25°C Unless otherwise specified) Hongjiacheng datasheet, p. 2 — • Switching Parameters (Ta=25°C Unless otherwise specified)
03 — Alternatives

Closest matches to BSS138W

2N7002 6.0× lower rise time, 2.8× higher power dissipation, 2.5× lower fall time
RUM002N02T2L 4.4× lower rds on, 2.5× lower breakdown voltage ds, 2.0× lower power dissipation
2N7002K 5.3× lower rise time, 3.1× lower output capacitance, 2.9× lower rds on
2N7002K-T1 5.3× lower rise time, 3.1× lower output capacitance, 2.9× lower rds on
2SK3018 5.7× higher fall time, 2.3× higher rds on, 2.1× lower input capacitance
BSS138PS 6.0× lower rise time, 3.9× lower rds on, 3.5× lower fall time
FDV303N 10.6× lower rds on, 2.3× higher drain current, 2.2× higher output capacitance
BSS123 5.0× lower reverse leakage current, 3.7× lower output capacitance, 3.0× lower reverse transfer capacitance
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