transistors thyristors

HL2310A

Every spec below is cited to the manufacturer datasheet. Pick your exact ordering code, compare the closest alternatives, then ask the assistant what it means for your design.

00 — Overview

What the HL2310A family does

The HL2310A is an N-channel trench power MOSFET in the SOT-23 package. It features a 60 V drain-source voltage rating, 3.0 A continuous drain current, and less than 105 mΩ on-resistance at 10 V gate drive. The device supports high-speed switching with low gate charge and includes an integrated body diode. Engineers typically use this component for battery protection circuits, load switching applications, and general power management tasks requiring compact surface-mount integration.

Next step
Start building with HL2310A → Every number above is cited straight from the datasheet — ask what they mean for your design, and the assistant answers from the same source documents.
01 — Key specifications

HL2310A datasheet parameters

ParameterMinTypMaxConditionsSource
rds on (abs max) 90 mOhm 105 mOhm VGS = 10V, ID = 3A; (on); • Maximum Ratings (Ta = 25°C Unless otherwise specified) Hongjiacheng datasheet, p. 2 — • Maximum Ratings (Ta=25°C Unless otherwise specified)
forward voltage (abs max) 900 mV 1.2 V IS = 3.0A, VGS = 0V; • Maximum Ratings (Ta = 25°C Unless otherwise specified) Hongjiacheng datasheet, p. 2 — • Maximum Ratings (Ta=25°C Unless otherwise specified)
operating temperature (abs max) -55 °C 150 °C Hongjiacheng datasheet, p. 1 — • Maximum Ratings (Ta=25°C Unless otherwise specified)
power dissipation (abs max) 1.2 W Ta = 25°C; • Maximum Ratings (Ta = 25°C Unless otherwise specified) Hongjiacheng datasheet, p. 1 — • Maximum Ratings (Ta=25°C Unless otherwise specified)
reverse leakage current (abs max) 1 µA VDS = 60V, VGS = 0V; zero; • Maximum Ratings (Ta = 25°C Unless otherwise specified) Hongjiacheng datasheet, p. 2 — • Maximum Ratings (Ta=25°C Unless otherwise specified)
breakdown voltage ds (abs max) 60 V VGS = 0V, ID = 250μA; • Maximum Ratings (Ta = 25°C Unless otherwise specified) Hongjiacheng datasheet, p. 2 — • Maximum Ratings (Ta=25°C Unless otherwise specified)
drain current (abs max) 3 A Ta = 25°C; • Maximum Ratings (Ta = 25°C Unless otherwise specified) Hongjiacheng datasheet, p. 1 — • Maximum Ratings (Ta=25°C Unless otherwise specified)
vgs threshold (abs max) 900 mV 2 V VDS = VGS, ID = 250μA; gate(th); • Maximum Ratings (Ta = 25°C Unless otherwise specified) Hongjiacheng datasheet, p. 2 — • Maximum Ratings (Ta=25°C Unless otherwise specified)
input capacitance 247 pF VDS = 30V, VGS = 0V, f = 1MHZ; • Dynamic Parameters (Ta = 25°C Unless otherwise specified) Hongjiacheng datasheet, p. 2 — • Dynamic Parameters (Ta=25°C Unless otherwise specified)
output capacitance 34 pF VDS = 30V, VGS = 0V, f = 1MHZ; • Dynamic Parameters (Ta = 25°C Unless otherwise specified) Hongjiacheng datasheet, p. 2 — • Dynamic Parameters (Ta=25°C Unless otherwise specified)
reverse transfer capacitance 19.5 pF VDS = 30V, VGS = 0V, f = 1MHZ; • Dynamic Parameters (Ta = 25°C Unless otherwise specified) Hongjiacheng datasheet, p. 2 — • Dynamic Parameters (Ta=25°C Unless otherwise specified)
gate charge 6 nC VGS = 4.5V, VDS = 30V, ID = 3.0A; • Switching Parameters (Ta = 25°C Unless otherwise specified) Hongjiacheng datasheet, p. 2 — • Switching Parameters (Ta=25°C Unless otherwise specified)
rise time 15 ns VGS = 10V, VDS = 30V, ID = 3.0ARGEN = 6Ω; turn; • Switching Parameters (Ta = 25°C Unless otherwise specified) Hongjiacheng datasheet, p. 2 — • Switching Parameters (Ta=25°C Unless otherwise specified)
fall time 10 ns VGS = 10V, VDS = 30V, ID = 3.0ARGEN = 6Ω; turn; • Switching Parameters (Ta = 25°C Unless otherwise specified) Hongjiacheng datasheet, p. 2 — • Switching Parameters (Ta=25°C Unless otherwise specified)
reverse recovery time 32.6 ns IF = 3.0A, di/dt = 100A/μs; • Switching Parameters (Ta = 25°C Unless otherwise specified) Hongjiacheng datasheet, p. 2 — • Switching Parameters (Ta=25°C Unless otherwise specified)
03 — Alternatives

Closest matches to HL2310A

HL2302 3.0× lower breakdown voltage ds, 2.2× higher fall time, 2.1× lower input capacitance
Si2302CDS 3.0× lower breakdown voltage ds, 2.3× lower vgs threshold, 2.1× lower rise time
IPD60R360P7S 10.8× higher breakdown voltage ds, 4.4× higher forward voltage, 2.8× higher vgs threshold
AO3402 15.0× higher reverse leakage current, 10.0× lower rise time, 4.0× lower fall time
MDD2302 3.6× lower rds on, 3.4× higher output capacitance, 3.0× lower breakdown voltage ds
2N7002 8.0× lower input capacitance, 5.6× lower reverse transfer capacitance, 5.0× lower output capacitance
AO3400A 6.0× lower rise time, 5.0× lower rds on, 3.8× lower reverse recovery time
DMG2302UK 10.0× higher reverse leakage current, 6.2× lower reverse recovery time, 5.9× lower fall time
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