IMBF170R1K0M1
Every spec below is cited to the manufacturer datasheet. Pick your exact ordering code, compare the closest alternatives, then ask the assistant what it means for your design.
What the IMBF170R1K0M1 family does
The IMBF170R1K0M1 is a CoolSiC™ 1700V SiC Trench MOSFET optimized for fly-back topologies. It features a 1700V drain-source voltage, 5.2A DC drain current, 1000mΩ on-resistance, and a 175°C virtual junction temperature. The device operates with a 4.5V gate threshold and supports 12V/0V gate-source compatibility. Engineers typically use this component in solar string inverters, central inverters, industrial UPS systems, SMPS, and chargers. Its low switching losses enable higher frequency operation while reducing system complexity and cooling requirements. The part qualifies for industrial applications per JEDEC standards.
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Every number above is cited straight from the datasheet — ask what they mean for your design, and the assistant answers from the same source documents.
IMBF170R1K0M1 datasheet parameters
| Parameter | Min | Typ | Max | Conditions | Source |
|---|---|---|---|---|---|
| rds on | — | 1 Ohm | — | Infineon datasheet, p. 1 — Table 1 Key Performance and Package Parameters | |
| operating temperature (abs max) | -55 °C | — | 175 °C | Infineon datasheet, p. 3 — Table 2 Maximum ratings | |
| power dissipation (abs max) | — | — | 68 W | Infineon datasheet, p. 3 — Table 2 Maximum ratings | |
| breakdown voltage ds (abs max) | — | — | 1.7 kV | Infineon datasheet, p. 3 — Table 2 Maximum ratings | |
| drain current | — | — | 100 nA | VGS = 20V, VDS = 0V; zero{gss}; Static characteristics (at $ Tvj = 25^{\circ}C $, unless otherwise specified) | Infineon datasheet, p. 5 — Table 4 Static characteristics (at , unless otherwise specified) |
| vgs threshold | 3.5 V | 4.5 V | 5.7 V | (tested after 1 ms pulse atVGS = 20V)I_D = 1.1mA, VDS = VGSTvj = 25^\circ C; gate(th); Static characteristics (at $ Tvj = 25^{\circ}C $, unless otherwise specified) | Infineon datasheet, p. 5 — Table 4 Static characteristics (at , unless otherwise specified) |
| input capacitance | — | 275 pF | — | VDD = 1000V, VGS = 0V, f = 1MHz, VAC = 25mV; {iss}; Dynamic characteristics (at $ Tvj = 25^{\circ}C $, unless otherwise specified) | Infineon datasheet, p. 6 — Table 5 Dynamic characteristics (at , unless otherwise specified) |
| output capacitance | — | 7.2 pF | — | VDD = 1000V, VGS = 0V, f = 1MHz, VAC = 25mV; {oss}; Dynamic characteristics (at $ Tvj = 25^{\circ}C $, unless otherwise specified) | Infineon datasheet, p. 6 — Table 5 Dynamic characteristics (at , unless otherwise specified) |
| reverse transfer capacitance | — | 700 fF | — | Infineon datasheet, p. 6 — Table 5 Dynamic characteristics (at , unless otherwise specified) | |
| gate charge | — | 5 nC | — | VDD = 1000V, I_D = 1A, VGS = 0/12V, \text{turn-on pulse}; Dynamic characteristics (at $ Tvj = 25^{\circ}C $, unless otherwise specified) | Infineon datasheet, p. 6 — Table 5 Dynamic characteristics (at , unless otherwise specified) |
| rise time | — | — | 14 ns | VDD = 1000V, I_D = 1A, VGS = 0/12V, RG, ext = 22\Omega, L_\sigma = 40nH, diode:body diode atVGS = 0Vsee Fig. E; 3.3 Switching characteristics | Infineon datasheet, p. 7 — 3.3 Switching characteristics |
| fall time | — | — | 22 ns | VDD = 1000V, I_D = 1A, VGS = 0/12V, RG, ext = 22\Omega, L_\sigma = 40nH, diode:body diode atVGS = 0Vsee Fig. E; 3.3 Switching characteristics | Infineon datasheet, p. 7 — 3.3 Switching characteristics |
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