transistors thyristors

MDD2302

Every spec below is cited to the manufacturer datasheet. Pick your exact ordering code, compare the closest alternatives, then ask the assistant what it means for your design.

00 — Overview

What the MDD2302 family does

The MDD2302 is a 20V N-Channel Enhancement Mode MOSFET featuring advanced trench process technology for ultra-low on-resistance. It operates with a single supply of 3 to 30 volts, offering a typical drain-source on-state resistance of 25 mΩ at 4.5V gate drive and 28 mΩ at 2.5V. The device supports a continuous drain current of 4A and a pulsed current of 12A. With a maximum power dissipation of 1.25W and a junction temperature range of -50 to 150°C, it serves applications in load switching, high-speed line drivers, and power management functions.

Next step
Start building with MDD2302 → Every number above is cited straight from the datasheet — ask what they mean for your design, and the assistant answers from the same source documents.
01 — Key specifications

MDD2302 datasheet parameters

ParameterMinTypMaxConditionsSource
rds on 25 mOhm 30 mOhm VGS = 4.5V, ID = 4A; rds(on); Ta = 25℃ unless otherwise specified MDDMicro datasheet, p. 2 — Ta = 25℃ unless otherwise specified
forward voltage 1.2 V IS = 1A, VGS = 0V; vsd; Source Drain Diode Characteristics MDDMicro datasheet, p. 2 — Source Drain Diode Characteristics
operating temperature -50 °C 150 °C MDDMicro datasheet, p. 1 — Marking
power dissipation 1.25 W (note 2); Marking MDDMicro datasheet, p. 1 — Marking
reverse leakage current 1 µA VDS = 20V, VGS = 0V; idss; Ta = 25℃ unless otherwise specified MDDMicro datasheet, p. 2 — Ta = 25℃ unless otherwise specified
breakdown voltage ds 20 V VGS = 0V, ID = 250μA; v(br); Ta = 25℃ unless otherwise specified MDDMicro datasheet, p. 2 — Ta = 25℃ unless otherwise specified
drain current 4 A continuous; Marking MDDMicro datasheet, p. 1 — Marking
vgs threshold 500 mV 800 mV 1.2 V VDS = VGS, ID = 250μA; vgs(th); Ta = 25℃ unless otherwise specified MDDMicro datasheet, p. 2 — Ta = 25℃ unless otherwise specified
input capacitance 340 pF VDS = 10VVGS = 0Vf = 1MHz; ciss; Dynamic Electrical Characteristics MDDMicro datasheet, p. 2 — Dynamic Electrical Characteristics
output capacitance 115 pF VDS = 10VVGS = 0Vf = 1MHz; coss; Dynamic Electrical Characteristics MDDMicro datasheet, p. 2 — Dynamic Electrical Characteristics
reverse transfer capacitance 33 pF VDS = 10VVGS = 0Vf = 1MHz; crss; Dynamic Electrical Characteristics MDDMicro datasheet, p. 2 — Dynamic Electrical Characteristics
gate charge 5.4 nC VDS = 10VVGS = 4.5VID = 3A; qg; Dynamic Electrical Characteristics MDDMicro datasheet, p. 2 — Dynamic Electrical Characteristics
rise time 36 ns VGS = 4.5V; t; Switching Characteristics MDDMicro datasheet, p. 2 — Switching Characteristics
fall time 10 ns R_G = 6\Omega; t; Switching Characteristics MDDMicro datasheet, p. 2 — Switching Characteristics
02 — FAQ

MDD2302 frequently asked questions

What is the breakdown voltage (ds) of the MDD2302?

The breakdown voltage (ds) is 20 V at VGS = 0V, ID = 250μA, and Ta = 25℃ unless otherwise specified.

What is the continuous drain current?

The continuous drain current is 4 A.

What is the fall time when R_G = 6Ω?

The fall time is 10 ns.

What is the forward voltage of the Source Drain Diode?

The forward voltage is 1.2 V at IS = 1A and VGS = 0V.

What is the gate charge (Qg) under the conditions VDS = 10V, VGS = 4.5V, and ID = 3A?

The gate charge is 5.4 nC.

What is the input capacitance (Ciss) of the MDD2302 under the condition VDS = 10V, VGS = 0V, and f = 1MHz?

The input capacitance is 340 pF.

What is the maximum operating temperature for the MDD2302?

The operating temperature is 150 °C.

What is the output capacitance (Coss) of the MDD2302 when VDS = 10V, VGS = 0V, and f = 1MHz?

The output capacitance is 115 pF.

What is the power dissipation of the MDD2302 under the condition of (note 2); Marking?

The power dissipation is 1.25 W.

What is the maximum rds(on) for the MDD2302?

The rds(on) is 25 mOhm at VGS = 4.5V, ID = 4A and Ta = 25℃ unless otherwise specified.

What is the reverse leakage current (IDSS) for the MDD2302?

The reverse leakage current is 1 µA at VDS = 20V, VGS = 0V, and Ta = 25℃ unless otherwise specified.

What is the reverse transfer capacitance (crss) of the MDD2302?

The reverse transfer capacitance (crss) is 33 pF when VDS = 10V, VGS = 0V, and f = 1MHz.

03 — Alternatives

Closest matches to MDD2302

AO3400A 14.4× lower rise time, 2.5× lower fall time, 1.9× higher input capacitance
HJ8205 5.4× higher drain current, 4.4× lower rise time, 4.2× higher reverse transfer capacitance
HL2300 7.5× higher drain current, 2.3× higher fall time, 2.1× higher reverse transfer capacitance
HL2302 3.8× lower output capacitance, 2.8× lower input capacitance, 2.2× higher fall time
Si2302CDS 5.1× lower rise time, 2.5× higher drain current, 2.1× lower output capacitance
AO3402 15.0× higher reverse leakage current, 4.0× lower fall time, 3.3× lower output capacitance
HL2310A 3.6× higher rds on, 3.4× lower output capacitance, 3.0× higher breakdown voltage ds
MDD3401 9.5× lower rise time, 1.9× higher input capacitance, 1.8× higher rds on
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