T2N7002
Full part number: T2N7002BK
Every spec below is cited to the manufacturer datasheet. Compare the closest alternatives, then ask the assistant what it means for your design.
What the T2N7002 does
The T2N7002BK is a silicon N-channel MOSFET designed for high-speed switching applications. This device features a low drain-source on-resistance of 1.05 Ω typical at 10 V gate drive and supports a drain-source voltage rating of 60 V. It handles a continuous drain current of 400 mA and a pulsed current of 1200 mA. Packaged in an SOT23 case, the component operates across a channel temperature range of -55 to 150 °C. Engineers typically use this transistor in power switching circuits where compact size and efficient thermal performance are required. The part includes specific switching time characteristics and gate charge parameters to ensure reliable operation in various electronic designs.
Datasheet parameters
| Parameter | Min | Typ | Max | Conditions | Source |
|---|---|---|---|---|---|
| rds on | — | 1.05 Ohm | 1.5 Ohm | ID = 100 mA, VGS = 10 V; (on); 5.1. Static Characteristics (Unless otherwise specified, $ Ta = 25\, ^{\circ}C $) | Toshiba datasheet, p. 3 — 5.1. Static Characteristics (Unless otherwise specified, ) |
| operating temperature | — | 150 °C | — | Channel temperature (Tch), absolute maximum rating | Toshiba datasheet, p. 2 — 1 2017-11-30 |
| power dissipation | — | — | 320 mW | 1 2017-11-30 | Toshiba datasheet, p. 2 — 1 2017-11-30 |
| reverse leakage current | — | — | 1 µA | VDS = 60 V, VGS = 0 V; 5.1. Static Characteristics (Unless otherwise specified, $ Ta = 25\, ^{\circ}C $) | Toshiba datasheet, p. 3 — 5.1. Static Characteristics (Unless otherwise specified, ) |
| breakdown voltage ds | — | — | 60 V | 1 2017-11-30 | Toshiba datasheet, p. 2 — 1 2017-11-30 |
| drain current | — | — | 400 mA | (dc); 1 2017-11-30 | Toshiba datasheet, p. 2 — 1 2017-11-30 |
| vgs threshold | 1.1 V | — | 2.1 V | ID = 250 μA, VDS = VGS; gate; 5.1. Static Characteristics (Unless otherwise specified, $ Ta = 25\, ^{\circ}C $) | Toshiba datasheet, p. 3 — 5.1. Static Characteristics (Unless otherwise specified, ) |
| input capacitance | — | 26 pF | 40 pF | VDS = 10 V, VGS = 0 V, f = 1 MHz; 5.1. Static Characteristics (Unless otherwise specified, $ Ta = 25\, ^{\circ}C $) | Toshiba datasheet, p. 3 — 5.1. Static Characteristics (Unless otherwise specified, ) |
| output capacitance | — | 5.5 pF | — | VDS = 10 V, VGS = 0 V, f = 1 MHz; 5.1. Static Characteristics (Unless otherwise specified, $ Ta = 25\, ^{\circ}C $) | Toshiba datasheet, p. 3 — 5.1. Static Characteristics (Unless otherwise specified, ) |
| reverse transfer capacitance | — | 1.3 pF | — | VDS = 10 V, VGS = 0 V, f = 1 MHz; 5.1. Static Characteristics (Unless otherwise specified, $ Ta = 25\, ^{\circ}C $) | Toshiba datasheet, p. 3 — 5.1. Static Characteristics (Unless otherwise specified, ) |
| gate charge | — | 390 pC | 600 pC | VDS = 30 V, VGS = 4.5 V, ID = 200 mA; (gate-source plus gate-drain); 5.3. Switching Time Test Circuit | Toshiba datasheet, p. 3 — 5.3. Switching Time Test Circuit |
| rise time | — | 3.6 ns | — | VDD = 30 V, ID = 200 mAVGS = 0 to 10 V, RG = 50 ΩDuty ≤ 1 %, VIN: tr, tf< 5 ns, Common source, See Chapter 5.3.; (rise time); 5.1. Static Characteristics (Unless otherwise specified, $ Ta = 25\, ^{\circ}C $) | Toshiba datasheet, p. 3 — 5.1. Static Characteristics (Unless otherwise specified, ) |
| fall time | — | 17 ns | — | VDD = 30 V, ID = 200 mAVGS = 0 to 10 V, RG = 50 ΩDuty ≤ 1 %, VIN: tr, tf< 5 ns, Common source, See Chapter 5.3.; (fall time); 5.1. Static Characteristics (Unless otherwise specified, $ Ta = 25\, ^{\circ}C $) | Toshiba datasheet, p. 3 — 5.1. Static Characteristics (Unless otherwise specified, ) |
Closest matches to T2N7002
Frequently asked questions
What is the breakdown voltage ds for the T2N7002BK?
The breakdown voltage ds is 60 V under the condition 1 2017-11-30.
What is the DC drain current specification for the T2N7002BK?
The DC drain current is 400 mA.
What is the fall time of the T2N7002BK when VDD = 30 V, ID = 200 mAVGS = 0 to 10 V, RG = 50 ΩDuty ≤ 1 %, VIN: tr, tf< 5 ns, Common source, See Chapter 5.3.?
The fall time is 17 ns.
What is the gate charge of the T2N7002BK?
The gate charge is 390 pC at VDS = 30 V, VGS = 4.5 V, ID = 200 mA; (gate-source plus gate-drain); 5.3. Switching Time Test Circuit.
What is the input capacitance of the T2N7002BK?
The input capacitance is 26 pF at VDS = 10 V, VGS = 0 V, and f = 1 MHz.
What is the absolute maximum rating for the channel temperature (Tch)?
The absolute maximum rating for the channel temperature (Tch) is 150 °C.
What is the output capacitance of the T2N7002BK at VDS = 10 V, VGS = 0 V, and f = 1 MHz?
The output capacitance is 5.5 pF.
What is the power dissipation of the T2N7002BK?
The power dissipation is 320 mW at 1 2017-11-30.
What is the maximum on-resistance (rds on) for the T2N7002BK at ID = 100 mA and VGS = 10 V?
The on-resistance (rds on) is 1.05 Ohm at ID = 100 mA and VGS = 10 V.
What is the reverse leakage current at VDS = 60 V, VGS = 0 V and Ta = 25 °C?
The reverse leakage current is 1 µA.
What is the reverse transfer capacitance of the T2N7002BK at VDS = 10 V, VGS = 0 V, and f = 1 MHz?
The reverse transfer capacitance is 1.3 pF.
What is the rise time of the T2N7002BK when VDD = 30 V, ID = 200 mA, GS = 0 to 10 V, RG = 50 Ω, Duty ≤ 1 %, VIN: tr, tf< 5 ns, and in a Common source configuration?
The rise time is 3.6 ns.