transistors-thyristors

T2N7002

Full part number: T2N7002BK

Key datasheet specifications and the closest alternatives, ranked by parametric similarity and grounded in the manufacturer datasheet.

01 — Overview

This Toshiba datasheet covers the T2N7002BK, an N-channel MOSFET in SOT23 packaging. It serves as a comprehensive technical reference for designers needing high-speed switching solutions. Key parameters include 60V drain-source voltage, 400mA continuous current, and low on-resistance of 1.05 ohms at 10V gate drive. The device features 2kV ESD protection and operates up to 150°C channel temperature. Detailed tables provide electrical characteristics like threshold voltage, capacitance values, and switching times, along with thermal resistance notes and handling precautions.

02 — Key specifications

Datasheet parameters

ParameterMinTypMaxConditions
rds on — 1.05 Ohm 1.5 Ohm ID = 100 mA, VGS = 10 V
power dissipation 320 mW — —
reverse leakage current — — 1 µA VDS = 60 V, VGS = 0 V
breakdown voltage ds 60 V — —
drain current 400 mA — —
vgs threshold 1.1 V — 2.1 V ID = 250 μA, VDS = VGS
input capacitance — 26 pF 40 pF VDS = 10 V, VGS = 0 V, f = 1 MHz
output capacitance — 5.5 pF — VDS = 10 V, VGS = 0 V, f = 1 MHz
reverse transfer capacitance — 1.3 pF — VDS = 10 V, VGS = 0 V, f = 1 MHz
gate charge — 390 pC 600 pC VDS = 30 V, VGS = 4.5 V, ID = 200 mA
rise time — 3.6 ns — VDD = 30 V, ID = 200 mAVGS = 0 to 10 V, RG = 50 ΩDuty ≤ 1 %, VIN: tr, tf< 5 ns, Common source, See Chapter 5.3.
fall time — 17 ns — VDD = 30 V, ID = 200 mAVGS = 0 to 10 V, RG = 50 ΩDuty ≤ 1 %, VIN: tr, tf< 5 ns, Common source, See Chapter 5.3.
collector emitter voltage — 60 V —
03 — Alternatives

Closest matches to T2N7002

2N7002K 2.2× higher reverse transfer capacitance, 1.7× lower fall time, 1.3× lower output capacitance
2N7002K-T1 1.9× higher reverse transfer capacitance, 1.9× higher rds on, 1.3× lower drain current
RK7002BM 1.7× lower input capacitance, 1.6× higher fall time, 1.6× higher rds on
BSS138PS 4.2× lower fall time, 3.1× higher reverse transfer capacitance, 1.8× higher gate charge
2N7002-13-F 3.0× higher rds on, 3.0× lower fall time, 2.5× higher drain current
BSS138-7-F 6.2× higher reverse transfer capacitance, 4.5× higher output capacitance, 2.0× lower drain current
FDV303N 6.9× higher reverse transfer capacitance, 5.1× higher output capacitance, 3.7× higher rise time
2N7002 4.4× higher gate charge, 2.7× higher reverse transfer capacitance, 2.7× higher rds on
04 — FAQ

Frequently asked questions

What is the breakdown voltage ds for the T2N7002BK?

The breakdown voltage ds is 60 V.

What is the collector-emitter voltage of the T2N7002BK?

The collector-emitter voltage is 60 V.

What is the drain current of the T2N7002BK?

The drain current is 400 mA.

What is the fall time of the T2N7002BK?

The fall time is 17 ns when VDD = 30 V, ID = 200 mA, VGS = 0 to 10 V, RG = 50 Ω, Duty ≤ 1 %, VIN: tr, tf < 5 ns, in a common source configuration.

What is the gate charge of the T2N7002BK when VDS = 30 V, VGS = 4.5 V, and ID = 200 mA?

The gate charge is 390 pC.

What is the input capacitance of the T2N7002BK?

The input capacitance is 26 pF at VDS = 10 V, VGS = 0 V, and f = 1 MHz.

What is the output capacitance of the T2N7002BK?

The output capacitance is 5.5 pF at VDS = 10 V, VGS = 0 V, and f = 1 MHz.

What is the power dissipation of the T2N7002BK?

The power dissipation is 320 mW.

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