2SK3018
Every spec below is cited to the manufacturer datasheet. Pick your exact ordering code, compare the closest alternatives, then ask the assistant what it means for your design.
What the 2SK3018 family does
The 2SK3018 is an N-channel trench power MOSFET in the SOT-23 package. It features a 30 V drain-source voltage rating, 0.1 A continuous drain current, and less than 8 Ω on-resistance at 4 V gate drive. The device supports 200 mW total power dissipation and operates from -55 to +150 °C. Engineers typically use this component for interfacing tasks and as a load switch in commercial and industrial circuits.
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Every number above is cited straight from the datasheet — ask what they mean for your design, and the assistant answers from the same source documents.
2SK3018 datasheet parameters
| Parameter | Min | Typ | Max | Conditions | Source |
|---|---|---|---|---|---|
| rds on | — | — | 8 Ohm | VGS = 4.0V, ID = 10mA; (on); • Static Parameter Characteristics (Ta = 25°C Unless otherwise specified) | Hongjiacheng datasheet, p. 2 — • Static Parameter Characteristics (Ta=25°C Unless otherwise spe… |
| operating temperature (abs max) | -55 °C | — | 150 °C | Hongjiacheng datasheet, p. 1 — • Maximum Ratings (Ta=25°C Unless otherwise specified) | |
| power dissipation (abs max) | — | — | 200 mW | • Maximum Ratings (Ta = 25°C Unless otherwise specified) | Hongjiacheng datasheet, p. 1 — • Maximum Ratings (Ta=25°C Unless otherwise specified) |
| reverse leakage current | — | — | 1 µA | VDS = 30V, VGS = 0V; zero; • Static Parameter Characteristics (Ta = 25°C Unless otherwise specified) | Hongjiacheng datasheet, p. 2 — • Static Parameter Characteristics (Ta=25°C Unless otherwise spe… |
| breakdown voltage ds | 30 V | — | — | VGS = 0V, ID = 250μA; • Static Parameter Characteristics (Ta = 25°C Unless otherwise specified) | Hongjiacheng datasheet, p. 2 — • Static Parameter Characteristics (Ta=25°C Unless otherwise spe… |
| drain current (abs max) | — | — | 100 mA | • Maximum Ratings (Ta = 25°C Unless otherwise specified) | Hongjiacheng datasheet, p. 1 — • Maximum Ratings (Ta=25°C Unless otherwise specified) |
| vgs threshold | 800 mV | — | 1.5 V | VDS = 3.0V, ID = 0.1mA; gate(th); • Static Parameter Characteristics (Ta = 25°C Unless otherwise specified) | Hongjiacheng datasheet, p. 2 — • Static Parameter Characteristics (Ta=25°C Unless otherwise spe… |
| input capacitance | — | 13 pF | — | VDS = 5.0V, VGS = 0V, f = 1MHZ; • Dynamic Parameters (Ta = 25°C Unless otherwise specified) | Hongjiacheng datasheet, p. 2 — • Dynamic Parameters (Ta=25°C Unless otherwise specified) |
| output capacitance | — | 9 pF | — | VDS = 5.0V, VGS = 0V, f = 1MHZ; • Dynamic Parameters (Ta = 25°C Unless otherwise specified) | Hongjiacheng datasheet, p. 2 — • Dynamic Parameters (Ta=25°C Unless otherwise specified) |
| reverse transfer capacitance | — | 4 pF | — | VDS = 5.0V, VGS = 0V, f = 1MHZ; • Dynamic Parameters (Ta = 25°C Unless otherwise specified) | Hongjiacheng datasheet, p. 2 — • Dynamic Parameters (Ta=25°C Unless otherwise specified) |
| rise time | — | 35 ns | — | VGS = 5.0V, VDS = 5.0V, ID = 10mA, RGEN = 10Ω, RL = 500Ω; turn; • Switching Parameters (Ta = 25°C Unless otherwise specified) | Hongjiacheng datasheet, p. 2 — • Switching Parameters (Ta=25°C Unless otherwise specified) |
| fall time | — | 80 ns | — | VGS = 5.0V, VDS = 5.0V, ID = 10mA, RGEN = 10Ω, RL = 500Ω; turn; • Switching Parameters (Ta = 25°C Unless otherwise specified) | Hongjiacheng datasheet, p. 2 — • Switching Parameters (Ta=25°C Unless otherwise specified) |
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