memory

PY25Q64HA

Every spec below is cited to the manufacturer datasheet. Pick your exact ordering code, compare the closest alternatives, then ask the assistant what it means for your design.

00 — Overview

What the PY25Q64HA family does

The PY25Q64HA is a low power 64M-bit serial multi I/O Flash memory supporting X1, X2, X4, QPI, and DTR modes. It operates on a single 2.7 to 3.6V supply with 100,000 program/erase cycles and 20-year data retention. Typical currents include 0.2uA deep power down, 15uA standby, and 3mA active read at 85MHz. The device features 0.5ms page program time and 50ms sector erase. It is ideal for high-volume consumer applications requiring code shadowing or efficient data storage. The part includes 128-bit unique ID and OTP security registers for serialization or key storage. Various package options like SOP, WSON, and USON are available for different system designs.

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Start building with PY25Q64HA → Every number above is cited straight from the datasheet — ask what they mean for your design, and the assistant answers from the same source documents.
Ordering code:
01 — Key specifications

PY25Q64HA-QVH-IR datasheet parameters

ParameterMinTypMaxConditionsSource
output current — 2 mA 4 mA f = 50MHz; IOUT = 0mA; icc1(1 io) PUYA datasheet, p. 8 — Table 5-2-2 DC Parameters (Device Grade I & K)
supply voltage range 2.7 V — 3.6 V vcc; Operation Conditions PUYA datasheet, p. 8 — Table 5-2-1 Operation Conditions
operating temperature -40 °C — 85 °C ta(grade i); Operation Conditions PUYA datasheet, p. 8 — Table 5-2-1 Operation Conditions
clock frequency — — 80 MHz fdsclk PUYA datasheet, p. 9 — Table 5-3-1 AC Parameters (Device Grade I & K)
standby current — 15 µA 30 µA CS#, HOLD#, WP# = VIH all inputs at CMOS levels; isb PUYA datasheet, p. 8 — Table 5-2-2 DC Parameters (Device Grade I & K)
input capacitance (abs max) — — 6 pF VIN = GND; cin; Pin Capacitance $ ^{[1]} $ PUYA datasheet, p. 7 — Table 5-1 Pin Capacitance
output capacitance (abs max) — — 8 pF VOUT = GND; cout; Pin Capacitance $ ^{[1]} $ PUYA datasheet, p. 7 — Table 5-1 Pin Capacitance
memory size — 64 Mbit — PUYA datasheet, p. 1
data retention — 20 year — PUYA datasheet, p. 1
program erase cycles — 100 kcycle — PUYA datasheet, p. 1
page program time — 500 µs 2.4 ms tpp(up to 256 bytes); AC Parameters for Program and Erase (Device Grade I & K) PUYA datasheet, p. 11 — Table 5-4 AC Parameters for Program and Erase (Device Grade I & K)
block erase time — 120 ms 600 ms tbe1; AC Parameters for Program and Erase (Device Grade I & K) PUYA datasheet, p. 11 — Table 5-4 AC Parameters for Program and Erase (Device Grade I & K)
sector erase time — 50 ms 150 ms tse; AC Parameters for Program and Erase (Device Grade I & K) PUYA datasheet, p. 11 — Table 5-4 AC Parameters for Program and Erase (Device Grade I & K)
output voltage low — — 200 mV IOL = 100uA; vol PUYA datasheet, p. 8 — Table 5-2-2 DC Parameters (Device Grade I & K)
02 — FAQ

PY25Q64HA-QVH-IR frequently asked questions

What is the block erase time (tbe1) under AC Parameters for Program and Erase (Device Grade I & K)?

The block erase time (tbe1) is 120 ms.

What is the clock frequency (fdsclk) for the PY25Q64HA-QVH-IR?

The clock frequency (fdsclk) is 80 MHz.

What is the data retention period for the PY25Q64HA-QVH-IR?

The data retention period is 20 year.

What is the input capacitance when VIN = GND?

The input capacitance is 6 pF.

What is the memory size of the PY25Q64HA-QVH-IR?

The memory size is 64 Mbit.

What is the maximum operating temperature for the PY25Q64HA-QVH-IR under ta(grade i) Operation Conditions?

The maximum operating temperature is 85 °C.

What is the output capacitance when VOUT = GND and measured with cout?

The output capacitance is 8 pF.

What is the output current when f = 50MHz, IOUT = 0mA, and icc1(1 io)?

The output current is 2 mA.

What is the output voltage low (VOL) when IOL is 100uA?

The output voltage low is 200 mV at IOL = 100uA.

What is the page program time for up to 256 bytes under AC Parameters for Program and Erase (Device Grade I & K)?

The page program time is 500 µs.

What is the program erase cycles specification for the PY25Q64HA-QVH-IR?

The program erase cycles are 100 kcycle.

What is the sector erase time (tse) for the PY25Q64HA-QVH-IR under AC Parameters for Program and Erase (Device Grade I & K)?

The sector erase time (tse) is 50 ms.

01 — Key specifications

PY25Q64HA-SMH-IR datasheet parameters

ParameterMinTypMaxConditionsSource
output current — 2 mA 4 mA f = 50MHz; IOUT = 0mA; icc1(1 io) PUYA datasheet, p. 8 — Table 5-2-2 DC Parameters (Device Grade I & K)
supply voltage range 2.7 V — 3.6 V vcc; Operation Conditions PUYA datasheet, p. 8 — Table 5-2-1 Operation Conditions
operating temperature -40 °C — 85 °C ta(grade i); Operation Conditions PUYA datasheet, p. 8 — Table 5-2-1 Operation Conditions
clock frequency — — 80 MHz fdsclk PUYA datasheet, p. 9 — Table 5-3-1 AC Parameters (Device Grade I & K)
standby current — 15 µA 30 µA CS#, HOLD#, WP# = VIH all inputs at CMOS levels; isb PUYA datasheet, p. 8 — Table 5-2-2 DC Parameters (Device Grade I & K)
input capacitance (abs max) — — 6 pF VIN = GND; cin; Pin Capacitance $ ^{[1]} $ PUYA datasheet, p. 7 — Table 5-1 Pin Capacitance
output capacitance (abs max) — — 8 pF VOUT = GND; cout; Pin Capacitance $ ^{[1]} $ PUYA datasheet, p. 7 — Table 5-1 Pin Capacitance
memory size — 64 Mbit — PUYA datasheet, p. 1
data retention — 20 year — PUYA datasheet, p. 1
program erase cycles — 100 kcycle — PUYA datasheet, p. 1
page program time — 500 µs 2.4 ms tpp(up to 256 bytes); AC Parameters for Program and Erase (Device Grade I & K) PUYA datasheet, p. 11 — Table 5-4 AC Parameters for Program and Erase (Device Grade I & K)
block erase time — 120 ms 600 ms tbe1; AC Parameters for Program and Erase (Device Grade I & K) PUYA datasheet, p. 11 — Table 5-4 AC Parameters for Program and Erase (Device Grade I & K)
sector erase time — 50 ms 150 ms tse; AC Parameters for Program and Erase (Device Grade I & K) PUYA datasheet, p. 11 — Table 5-4 AC Parameters for Program and Erase (Device Grade I & K)
output voltage low — — 200 mV IOL = 100uA; vol PUYA datasheet, p. 8 — Table 5-2-2 DC Parameters (Device Grade I & K)
02 — FAQ

PY25Q64HA-SMH-IR frequently asked questions

What is the block erase time (tbe1) under AC Parameters for Program and Erase (Device Grade I & K)?

The block erase time (tbe1) is 120 ms.

What is the clock frequency under the fdsclk condition?

The clock frequency is 80 MHz under the fdsclk condition.

What is the data retention period for the PY25Q64HA-SMH-IR?

The data retention is 20 year.

What is the input capacitance when VIN = GND and cin is measured at the pin?

The input capacitance is 6 pF.

What is the memory size of the PY25Q64HA-SMH-IR?

The memory size is 64 Mbit.

What is the operating temperature for the PY25Q64HA-SMH-IR under ta(grade i) operation conditions?

The operating temperature is 85 °C.

What is the output capacitance?

The output capacitance is 8 pF at VOUT = GND; cout; Pin Capacitance $ ^{[1]} $.

What is the output current when f = 50MHz, IOUT = 0mA, and icc1(1 io)?

The output current is 2 mA.

What is the output voltage low specification?

The output voltage low is 200 mV at IOL = 100uA.

What is the page program time for up to 256 bytes under AC Parameters for Program and Erase (Device Grade I & K)?

The page program time is 500 µs.

What is the program erase cycle endurance for the PY25Q64HA-SMH-IR?

The program erase cycle endurance is 100 kcycle.

What is the sector erase time (tse) for the PY25Q64HA-SMH-IR under AC Parameters for Program and Erase (Device Grade I & K)?

The sector erase time (tse) is 50 ms.

01 — Key specifications

PY25Q64HA-SMH-IT datasheet parameters

ParameterMinTypMaxConditionsSource
output current — 2 mA 4 mA f = 50MHz; IOUT = 0mA; icc1(1 io) PUYA datasheet, p. 8 — Table 5-2-2 DC Parameters (Device Grade I & K)
supply voltage range 2.7 V — 3.6 V vcc; Operation Conditions PUYA datasheet, p. 8 — Table 5-2-1 Operation Conditions
operating temperature -40 °C — 85 °C ta(grade i); Operation Conditions PUYA datasheet, p. 8 — Table 5-2-1 Operation Conditions
clock frequency — — 80 MHz fdsclk PUYA datasheet, p. 9 — Table 5-3-1 AC Parameters (Device Grade I & K)
standby current — 15 µA 30 µA CS#, HOLD#, WP# = VIH all inputs at CMOS levels; isb PUYA datasheet, p. 8 — Table 5-2-2 DC Parameters (Device Grade I & K)
input capacitance (abs max) — — 6 pF VIN = GND; cin; Pin Capacitance $ ^{[1]} $ PUYA datasheet, p. 7 — Table 5-1 Pin Capacitance
output capacitance (abs max) — — 8 pF VOUT = GND; cout; Pin Capacitance $ ^{[1]} $ PUYA datasheet, p. 7 — Table 5-1 Pin Capacitance
memory size — 64 Mbit — PUYA datasheet, p. 1
data retention — 20 year — PUYA datasheet, p. 1
program erase cycles — 100 kcycle — PUYA datasheet, p. 1
page program time — 500 µs 2.4 ms tpp(up to 256 bytes); AC Parameters for Program and Erase (Device Grade I & K) PUYA datasheet, p. 11 — Table 5-4 AC Parameters for Program and Erase (Device Grade I & K)
block erase time — 120 ms 600 ms tbe1; AC Parameters for Program and Erase (Device Grade I & K) PUYA datasheet, p. 11 — Table 5-4 AC Parameters for Program and Erase (Device Grade I & K)
sector erase time — 50 ms 150 ms tse; AC Parameters for Program and Erase (Device Grade I & K) PUYA datasheet, p. 11 — Table 5-4 AC Parameters for Program and Erase (Device Grade I & K)
output voltage low — — 200 mV IOL = 100uA; vol PUYA datasheet, p. 8 — Table 5-2-2 DC Parameters (Device Grade I & K)
02 — FAQ

PY25Q64HA-SMH-IT frequently asked questions

What is the block erase time (tbe1) for the PY25Q64HA-SMH-IT under AC Parameters for Program and Erase (Device Grade I & K)?

The block erase time (tbe1) is 120 ms.

What is the clock frequency (fdsclk) for the PY25Q64HA-SMH-IT?

The clock frequency (fdsclk) is 80 MHz.

What is the data retention period for the PY25Q64HA-SMH-IT?

The data retention is 20 year.

What is the input capacitance when VIN = GND and cin is measured at the pin?

The input capacitance is 6 pF.

What is the memory size of the PY25Q64HA-SMH-IT?

The memory size is 64 Mbit.

What is the maximum operating temperature for the PY25Q64HA-SMH-IT under grade i operation conditions?

The operating temperature is 85 °C.

What is the output capacitance of the PY25Q64HA-SMH-IT when VOUT = GND and measured at cout?

The output capacitance is 8 pF.

What is the output current when f = 50MHz, IOUT = 0mA, and icc1(1 io)?

The output current is 2 mA.

What is the output voltage low specification?

The output voltage low is 200 mV at IOL = 100uA.

What is the page program time for up to 256 bytes under AC Parameters for Program and Erase (Device Grade I & K)?

The page program time is 500 µs.

What is the program erase cycle endurance for the PY25Q64HA-SMH-IT?

The program erase cycles are 100 kcycle.

What is the sector erase time (tse) under AC Parameters for Program and Erase (Device Grade I & K)?

The sector erase time (tse) is 50 ms.

01 — Key specifications

PY25Q64HA-SSH-IR datasheet parameters

ParameterMinTypMaxConditionsSource
output current — 2 mA 4 mA f = 50MHz; IOUT = 0mA; icc1(1 io) PUYA datasheet, p. 8 — Table 5-2-2 DC Parameters (Device Grade I & K)
supply voltage range 2.7 V — 3.6 V vcc; Operation Conditions PUYA datasheet, p. 8 — Table 5-2-1 Operation Conditions
operating temperature -40 °C — 85 °C ta(grade i); Operation Conditions PUYA datasheet, p. 8 — Table 5-2-1 Operation Conditions
clock frequency — — 80 MHz fdsclk PUYA datasheet, p. 9 — Table 5-3-1 AC Parameters (Device Grade I & K)
standby current — 15 µA 30 µA CS#, HOLD#, WP# = VIH all inputs at CMOS levels; isb PUYA datasheet, p. 8 — Table 5-2-2 DC Parameters (Device Grade I & K)
input capacitance (abs max) — — 6 pF VIN = GND; cin; Pin Capacitance $ ^{[1]} $ PUYA datasheet, p. 7 — Table 5-1 Pin Capacitance
output capacitance (abs max) — — 8 pF VOUT = GND; cout; Pin Capacitance $ ^{[1]} $ PUYA datasheet, p. 7 — Table 5-1 Pin Capacitance
memory size — 64 Mbit — PUYA datasheet, p. 1
data retention — 20 year — PUYA datasheet, p. 1
program erase cycles — 100 kcycle — PUYA datasheet, p. 1
page program time — 500 µs 2.4 ms tpp(up to 256 bytes); AC Parameters for Program and Erase (Device Grade I & K) PUYA datasheet, p. 11 — Table 5-4 AC Parameters for Program and Erase (Device Grade I & K)
block erase time — 120 ms 600 ms tbe1; AC Parameters for Program and Erase (Device Grade I & K) PUYA datasheet, p. 11 — Table 5-4 AC Parameters for Program and Erase (Device Grade I & K)
sector erase time — 50 ms 150 ms tse; AC Parameters for Program and Erase (Device Grade I & K) PUYA datasheet, p. 11 — Table 5-4 AC Parameters for Program and Erase (Device Grade I & K)
output voltage low — — 200 mV IOL = 100uA; vol PUYA datasheet, p. 8 — Table 5-2-2 DC Parameters (Device Grade I & K)
02 — FAQ

PY25Q64HA-SSH-IR frequently asked questions

What is the block erase time (tbe1) for the PY25Q64HA-SSH-IR under AC Parameters for Program and Erase (Device Grade I & K)?

The block erase time (tbe1) is 120 ms.

What is the clock frequency under the fdsclk condition?

The clock frequency is 80 MHz under the fdsclk condition.

What is the data retention period for the PY25Q64HA-SSH-IR?

The data retention period is 20 year.

What is the input capacitance when VIN = GND and cin is measured at the pin?

The input capacitance is 6 pF.

What is the memory size of the PY25Q64HA-SSH-IR?

The memory size is 64 Mbit.

What is the operating temperature for the PY25Q64HA-SSH-IR under ta(grade i) operation conditions?

The operating temperature is 85 °C.

What is the output capacitance when VOUT = GND and cout; Pin Capacitance is measured?

The output capacitance is 8 pF.

What is the output current when f = 50MHz, IOUT = 0mA, and icc1(1 io)?

The output current is 2 mA.

What is the output voltage low specification?

The output voltage low is 200 mV at IOL = 100uA.

What is the page program time for up to 256 bytes under AC Parameters for Program and Erase (Device Grade I & K)?

The page program time is 500 µs.

What is the program erase cycle endurance for the PY25Q64HA-SSH-IR?

The program erase cycles are 100 kcycle.

What is the sector erase time (tse) for the PY25Q64HA-SSH-IR under AC Parameters for Program and Erase (Device Grade I & K)?

The sector erase time (tse) is 50 ms.

01 — Key specifications

PY25Q64HA-SSH-IT datasheet parameters

ParameterMinTypMaxConditionsSource
output current — 2 mA 4 mA f = 50MHz; IOUT = 0mA; icc1(1 io) PUYA datasheet, p. 8 — Table 5-2-2 DC Parameters (Device Grade I & K)
supply voltage range 2.7 V — 3.6 V vcc; Operation Conditions PUYA datasheet, p. 8 — Table 5-2-1 Operation Conditions
operating temperature -40 °C — 85 °C ta(grade i); Operation Conditions PUYA datasheet, p. 8 — Table 5-2-1 Operation Conditions
clock frequency — — 80 MHz fdsclk PUYA datasheet, p. 9 — Table 5-3-1 AC Parameters (Device Grade I & K)
standby current — 15 µA 30 µA CS#, HOLD#, WP# = VIH all inputs at CMOS levels; isb PUYA datasheet, p. 8 — Table 5-2-2 DC Parameters (Device Grade I & K)
input capacitance (abs max) — — 6 pF VIN = GND; cin; Pin Capacitance $ ^{[1]} $ PUYA datasheet, p. 7 — Table 5-1 Pin Capacitance
output capacitance (abs max) — — 8 pF VOUT = GND; cout; Pin Capacitance $ ^{[1]} $ PUYA datasheet, p. 7 — Table 5-1 Pin Capacitance
memory size — 64 Mbit — PUYA datasheet, p. 1
data retention — 20 year — PUYA datasheet, p. 1
program erase cycles — 100 kcycle — PUYA datasheet, p. 1
page program time — 500 µs 2.4 ms tpp(up to 256 bytes); AC Parameters for Program and Erase (Device Grade I & K) PUYA datasheet, p. 11 — Table 5-4 AC Parameters for Program and Erase (Device Grade I & K)
block erase time — 120 ms 600 ms tbe1; AC Parameters for Program and Erase (Device Grade I & K) PUYA datasheet, p. 11 — Table 5-4 AC Parameters for Program and Erase (Device Grade I & K)
sector erase time — 50 ms 150 ms tse; AC Parameters for Program and Erase (Device Grade I & K) PUYA datasheet, p. 11 — Table 5-4 AC Parameters for Program and Erase (Device Grade I & K)
output voltage low — — 200 mV IOL = 100uA; vol PUYA datasheet, p. 8 — Table 5-2-2 DC Parameters (Device Grade I & K)
02 — FAQ

PY25Q64HA-SSH-IT frequently asked questions

What is the block erase time (tbe1) under AC Parameters for Program and Erase (Device Grade I & K)?

The block erase time (tbe1) is 120 ms.

What is the clock frequency (fdsclk)?

The clock frequency (fdsclk) is 80 MHz.

What is the data retention period for the PY25Q64HA-SSH-IT?

The data retention period is 20 year.

What is the input capacitance when VIN = GND and cin; Pin Capacitance $ ^{[1]} $?

The input capacitance is 6 pF.

What is the memory size of the PY25Q64HA-SSH-IT?

The memory size is 64 Mbit.

What is the maximum operating temperature for the PY25Q64HA-SSH-IT under grade i conditions?

The operating temperature is 85 °C at ta(grade i).

What is the output capacitance?

The output capacitance is 8 pF at VOUT = GND; cout; Pin Capacitance $ ^{[1]} $.

What is the output current when f = 50MHz, IOUT = 0mA, and icc1(1 io)?

The output current is 2 mA.

What is the output voltage low (VOL) when IOL = 100uA?

The output voltage low is 200 mV.

What is the page program time for up to 256 bytes under AC Parameters for Program and Erase (Device Grade I & K)?

The page program time is 500 µs.

What is the program erase cycle endurance for the PY25Q64HA-SSH-IT?

The program erase cycle endurance is 100 kcycle.

What is the sector erase time (tse) for the PY25Q64HA-SSH-IT under AC Parameters for Program and Erase (Device Grade I & K)?

The sector erase time (tse) is 50 ms.

03 — Alternatives

Closest matches to PY25Q64HA

GD25Q128EBIG 2.0× higher memory size, 1.2× higher block erase time, 1.1× lower sector erase time
W25Q128JV-IN 2.0× higher memory size, 1.6× lower supply voltage range, 1.5× lower standby current
W25Q32JV-IQ 1.9× lower memory size, 1.5× lower standby current, 1.2× lower page program time
W25Q64JVSFIQ 1.5× lower standby current, 1.2× lower page program time, 1.1× lower sector erase time
GD25Q32EBIG 2.1× higher block erase time, 1.9× lower memory size, 1.2× lower standby current
GD25Q64EBIG 2.1× higher block erase time, 1.2× lower standby current, 1.1× lower sector erase time
W25Q16JV-IQ 4.0× lower memory size, 1.5× lower standby current, 1.2× lower page program time
W25Q20EW 1.8× lower supply voltage range, 1.5× lower standby current, 1.3× lower clock frequency
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