GD25Q64
Full part number: GD25Q64EBIG
Every spec below is cited to the manufacturer datasheet. Compare the closest alternatives, then ask the assistant what it means for your design.
What the GD25Q64 does
The GD25Q64Ex family comprises dual and quad serial flash memory devices available in multiple temperature grades. These parts offer 64 Mbit capacity with 25 MHz maximum clock speed, 100,000 program/erase cycles, and 20-year data retention. The architecture supports standard, dual, and quad I/O modes for faster data transfer. Engineers typically use these components in embedded systems requiring high-density non-volatile storage, such as microcontroller code storage, configuration parameters, and user data logging in industrial and consumer electronics applications.
Datasheet parameters
| Parameter | Min | Typ | Max | Conditions | Source |
|---|---|---|---|---|---|
| supply voltage range | 2.7 V | — | 3.6 V | GigaDevice datasheet, p. 4 | |
| operating temperature (abs max) | -40 °C | — | 85 °C | (ta); 8.3 Absolute Maximum Ratings | GigaDevice datasheet, p. 37 — 8.3 Absolute Maximum Ratings |
| clock frequency | — | — | 133 MHz | fc1(03h); 8.6 AC Characteristics | GigaDevice datasheet, p. 42 — 8.6 AC Characteristics |
| standby current | — | 12 µA | 120 µA | CS# = VCC, VIN = VCC or VSS; icc1 | GigaDevice datasheet, p. 41 |
| input capacitance | — | — | 6 pF | VIN = 0V; cin; 8.4 Capacitance Measurement Conditions | GigaDevice datasheet, p. 38 — 8.4 Capacitance Measurement Conditions |
| output capacitance | — | — | 8 pF | VOUT = 0V; cout; 8.4 Capacitance Measurement Conditions | GigaDevice datasheet, p. 38 — 8.4 Capacitance Measurement Conditions |
| slew rate | 200 V/µs | — | — | tchcl(slew rate); 8.6 AC Characteristics | GigaDevice datasheet, p. 42 — 8.6 AC Characteristics |
| memory size | — | 64 Mbit | — | GigaDevice datasheet, p. 4 | |
| data retention | — | 20 year | — | GigaDevice datasheet, p. 4 | |
| program erase cycles | — | 100 kcycle | — | GigaDevice datasheet, p. 4 | |
| page program time | — | 500 µs | — | GigaDevice datasheet, p. 47 — Uniform Sector Dual and Quad Serial Flash GD25Q64E | |
| block erase time | — | 250 ms | — | GigaDevice datasheet, p. 47 — Uniform Sector Dual and Quad Serial Flash GD25Q64E | |
| sector erase time | — | 45 ms | — | GigaDevice datasheet, p. 43 — Dual and Quad Serial Flash GD25Q64E | |
| output voltage low | — | — | 200 mV | IOL = 100µA; vol; 8.5 DC Characteristics | GigaDevice datasheet, p. 39 — 8.5 DC Characteristics |
| load capacitance | 30 pF | — | — | cl; 8.4 Capacitance Measurement Conditions | GigaDevice datasheet, p. 38 — 8.4 Capacitance Measurement Conditions |
Closest matches to GD25Q64
Frequently asked questions
What is the block erase time for the GD25Q64EBIG?
The block erase time is 250 ms.
What is the clock frequency for the GD25Q64EBIG when operating under the fc1(03h) condition specified in section 8.6 AC Characteristics?
The clock frequency is 133 MHz.
What is the data retention period for the GD25Q64EBIG?
The data retention period is 20 year.
What is the input capacitance (cin) when VIN = 0V?
The input capacitance is 6 pF under the condition VIN = 0V as specified in section 8.4 Capacitance Measurement Conditions.
What is the load capacitance under the conditions specified in section 8.4 Capacitance Measurement Conditions?
The load capacitance is 30 pF.
What is the memory size of the GD25Q64EBIG?
The memory size is 64 Mbit.
What is the maximum operating temperature (ta) listed in the Absolute Maximum Ratings?
The operating temperature (ta) is 85 °C.
What is the output capacitance when VOUT = 0V?
The output capacitance is 8 pF.
What is the output voltage low specification under the condition IOL = 100µA?
The output voltage low is 200 mV.
What is the page program time for the GD25Q64EBIG?
The page program time is 500 µs.
What is the program erase cycle endurance for the GD25Q64EBIG?
The program erase cycle endurance is 100 kcycle.
What is the sector erase time for the GD25Q64EBIG?
The sector erase time is 45 ms.