GD25Q128
Full part number: GD25Q128EBIG
Every spec below is cited to the manufacturer datasheet. Compare the closest alternatives, then ask the assistant what it means for your design.
What the GD25Q128 does
The GD25Q128Ex family comprises dual and quad serial flash memory devices available in multiple package types. These parts offer 128 Mbit capacity with a 3.3 V to 3.6 V operating voltage. Key specifications include 100 MHz maximum clock frequency, 100,000 program/erase cycle endurance, and 20-year data retention. The devices support standard, dual, and quad I/O interfaces for faster data transfer. Engineers typically use these components in embedded systems requiring high-density non-volatile storage, such as microcontroller code storage, configuration data retention, and file system applications in industrial and consumer electronics.
Datasheet parameters
| Parameter | Min | Typ | Max | Conditions | Source |
|---|---|---|---|---|---|
| supply voltage range | 2.7 V | — | 3.6 V | GigaDevice datasheet, p. 4 | |
| operating temperature (abs max) | -40 °C | — | 85 °C | 8.3 Absolute Maximum Ratings | GigaDevice datasheet, p. 40 — 8.3 Absolute Maximum Ratings |
| clock frequency | — | — | 133 MHz | fc1(03h); 8.6 AC Characteristics | GigaDevice datasheet, p. 45 — 8.6 AC Characteristics |
| standby current | — | 14 µA | 120 µA | CS# = VCC, VIN = VCC or VSS; icc1 | GigaDevice datasheet, p. 44 |
| input capacitance | — | — | 6 pF | VIN = 0V; cin; 8.4 Capacitance Measurement Conditions | GigaDevice datasheet, p. 41 — 8.4 Capacitance Measurement Conditions |
| output capacitance | — | — | 8 pF | VOUT = 0V; cout; 8.4 Capacitance Measurement Conditions | GigaDevice datasheet, p. 41 — 8.4 Capacitance Measurement Conditions |
| slew rate | 200 V/µs | — | — | tchcl(slew rate); 8.6 AC Characteristics | GigaDevice datasheet, p. 45 — 8.6 AC Characteristics |
| fall time | — | — | 5 ns | 8.4 Capacitance Measurement Conditions | GigaDevice datasheet, p. 41 — 8.4 Capacitance Measurement Conditions |
| memory size | — | 128 Mbit | — | GigaDevice datasheet, p. 4 | |
| data retention | — | 20 year | — | GigaDevice datasheet, p. 4 | |
| program erase cycles | — | 100 kcycle | — | GigaDevice datasheet, p. 4 | |
| block erase time | — | 150 ms | — | 32K Bytes block | GigaDevice datasheet, p. 46 — Dual and Quad Serial Flash GD25Q128E |
| sector erase time | — | 45 ms | — | GigaDevice datasheet, p. 46 — Dual and Quad Serial Flash GD25Q128E | |
| output voltage low | — | — | 200 mV | IOL = 100µA; vol; 8.5 DC Characteristics | GigaDevice datasheet, p. 42 — 8.5 DC Characteristics |
| load capacitance | 30 pF | — | — | cl; 8.4 Capacitance Measurement Conditions | GigaDevice datasheet, p. 41 — 8.4 Capacitance Measurement Conditions |
Closest matches to GD25Q128
Frequently asked questions
What is the block erase time for a 32K Bytes block?
The block erase time is 150 ms for a 32K Bytes block.
What is the clock frequency for the GD25Q128EBIG when using the fc1(03h) command as specified in section 8.6 AC Characteristics?
The clock frequency is 133 MHz.
What is the data retention period for the GD25Q128EBIG?
The data retention period is 20 year.
What is the fall time under 8.4 Capacitance Measurement Conditions?
The fall time is 5 ns under 8.4 Capacitance Measurement Conditions.
What is the input capacitance when VIN = 0V?
The input capacitance is 6 pF.
What is the load capacitance under cl; 8.4 Capacitance Measurement Conditions?
The load capacitance is 30 pF.
What is the memory size of the GD25Q128EBIG?
The memory size is 128 Mbit.
What is the maximum operating temperature for the GD25Q128EBIG?
The absolute maximum operating temperature is 85 °C.
What is the output capacitance of the GD25Q128EBIG when VOUT = 0V?
The output capacitance is 8 pF when VOUT = 0V.
What is the output voltage low (vol) when IOL = 100µA?
The output voltage low is 200 mV.
What is the program erase cycle endurance for the GD25Q128EBIG?
The program erase cycle endurance is 100 kcycle.
What is the sector erase time for the GD25Q128EBIG?
The sector erase time is 45 ms.