GD25Q32
Full part number: GD25Q32EBIG
Every spec below is cited to the manufacturer datasheet. Compare the closest alternatives, then ask the assistant what it means for your design.
What the GD25Q32 does
The GD25Q32Ex family comprises dual and quad serial flash memory devices available in 32 Mbit capacity. These parts support SPI, Dual I/O, and Quad I/O interfaces with speeds up to 104 MHz. They feature a 2.7 V to 3.6 V operating voltage, 100,000 program/erase cycles endurance, and 20-year data retention. The devices include a 32KB block erase function and deep power-down mode for low standby current. Engineers typically use these components in embedded systems requiring high-speed code storage, configuration data retention, and non-volatile parameter storage across industrial and commercial applications.
Datasheet parameters
| Parameter | Min | Typ | Max | Conditions | Source |
|---|---|---|---|---|---|
| supply voltage range | 2.7 V | — | 3.6 V | GigaDevice datasheet, p. 4 | |
| operating temperature (abs max) | -40 °C | — | 85 °C | 8.3 Absolute Maximum Ratings | GigaDevice datasheet, p. 37 — 8.3 Absolute Maximum Ratings |
| clock frequency | — | — | 133 MHz | fc1(03h); 8.6 AC Characteristics | GigaDevice datasheet, p. 42 — 8.6 AC Characteristics |
| standby current | — | 12 µA | 120 µA | CS# = VCC, VIN = VCC or VSS; icc1 | GigaDevice datasheet, p. 41 |
| input capacitance | — | — | 6 pF | VIN = 0V; cin; 8.4 Capacitance Measurement Conditions | GigaDevice datasheet, p. 38 — 8.4 Capacitance Measurement Conditions |
| output capacitance | — | — | 8 pF | VOUT = 0V; cout; 8.4 Capacitance Measurement Conditions | GigaDevice datasheet, p. 38 — 8.4 Capacitance Measurement Conditions |
| slew rate | 200 V/µs | — | — | tchcl(slew rate); 8.6 AC Characteristics | GigaDevice datasheet, p. 42 — 8.6 AC Characteristics |
| fall time | — | — | 5 ns | 8.4 Capacitance Measurement Conditions | GigaDevice datasheet, p. 38 — 8.4 Capacitance Measurement Conditions |
| memory size | — | 33.6 Mbit | — | GigaDevice datasheet, p. 4 | |
| data retention | — | 20 year | — | GigaDevice datasheet, p. 4 | |
| program erase cycles | — | 100 kcycle | — | GigaDevice datasheet, p. 4 | |
| page program time | — | 500 µs | — | GigaDevice datasheet, p. 43 — Dual and Quad Serial Flash GD25Q32E | |
| block erase time | — | 250 ms | — | GigaDevice datasheet, p. 43 — Dual and Quad Serial Flash GD25Q32E | |
| sector erase time | — | 45 ms | — | GigaDevice datasheet, p. 43 — Dual and Quad Serial Flash GD25Q32E | |
| output voltage low | — | — | 200 mV | IOL = 100µA; vol; 8.5 DC Characteristics | GigaDevice datasheet, p. 39 — 8.5 DC Characteristics |
| load capacitance | 30 pF | — | — | cl; 8.4 Capacitance Measurement Conditions | GigaDevice datasheet, p. 38 — 8.4 Capacitance Measurement Conditions |
Closest matches to GD25Q32
Frequently asked questions
What is the block erase time?
The block erase time is 250 ms.
What is the clock frequency under the condition fc1(03h) as specified in section 8.6 AC Characteristics?
The clock frequency is 133 MHz.
What is the data retention period for the GD25Q32EBIG?
The data retention period is 20 year.
What is the fall time under 8.4 Capacitance Measurement Conditions?
The fall time is 5 ns under 8.4 Capacitance Measurement Conditions.
What is the input capacitance of the GD25Q32EBIG when VIN = 0V?
The input capacitance is 6 pF under the condition VIN = 0V; cin; 8.4 Capacitance Measurement Conditions.
What is the load capacitance under the conditions specified in section 8.4 Capacitance Measurement Conditions?
The load capacitance is 30 pF.
What is the memory size of the GD25Q32EBIG?
The memory size is 33.6 Mbit.
What is the maximum operating temperature for the GD25Q32EBIG?
The operating temperature is 85 °C as specified in section 8.3 Absolute Maximum Ratings.
What is the output capacitance when VOUT = 0V?
The output capacitance is 8 pF under the condition VOUT = 0V.
What is the output voltage low specification for the GD25Q32EBIG?
The output voltage low is 200 mV when IOL = 100µA; vol; 8.5 DC Characteristics.
What is the page program time for the GD25Q32EBIG?
The page program time is 500 µs.
What is the program erase cycle endurance for the GD25Q32EBIG?
The program erase cycle endurance is 100 kcycle.