memory

W25Q128JV-I

Every spec below is cited to the manufacturer datasheet. Pick your exact ordering code, compare the closest alternatives, then ask the assistant what it means for your design.

00 — Overview

What the W25Q128JV-I family does

The W25Q128JV is a 128-Mbit serial flash memory supporting dual and quad SPI modes for industrial and industrial plus grades. It operates on a single 3-V supply with a 128-Mbit capacity and 10-MHz maximum clock speed. The device features 1.3-ms erase time and 200-ns read latency. Engineers typically use this component for code storage, configuration data retention, and non-volatile parameter storage in embedded systems requiring high density and fast access speeds.

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Start building with W25Q128JV-I → Every number above is cited straight from the datasheet — ask what they mean for your design, and the assistant answers from the same source documents.
Ordering code:
01 — Key specifications

W25Q128JV-IN datasheet parameters

ParameterMinTypMaxConditionsSource
supply voltage range -600 mV 4.6 V 9. ELECTRICAL CHARACTERISTICS Winbond datasheet, p. 61 — 9. ELECTRICAL CHARACTERISTICS
operating temperature -40 °C 85 °C Industrial; 9.2 Operating Ranges Winbond datasheet, p. 61 — 9.2 Operating Ranges
clock frequency 133 MHz (03h); winbond Winbond datasheet, p. 65 — winbond
standby current 10 µA 60 µA /CS = VCC, VIN = GND or VCC; winbond Winbond datasheet, p. 63 — winbond
input capacitance 6 pF VIN = 0V(1); winbond Winbond datasheet, p. 63 — winbond
output capacitance 8 pF VOUT = 0V(1); winbond Winbond datasheet, p. 63 — winbond
rise time 5 ns 9.5 AC Measurement Conditions Winbond datasheet, p. 64 — 9.5 AC Measurement Conditions
memory size 128 Mbit Winbond datasheet, p. 5
data retention 20 year Winbond datasheet, p. 5
program erase cycles 100 kcycle Winbond datasheet, p. 5
page program time 400 µs 3 ms page; winbond Winbond datasheet, p. 66 — winbond
block erase time 120 ms 1.6 s (32kb); winbond Winbond datasheet, p. 66 — winbond
sector erase time 45 ms 400 ms (4kb); winbond Winbond datasheet, p. 66 — winbond
output voltage low 200 mV IOL = 100 µA; winbond Winbond datasheet, p. 63 — winbond
load capacitance 30 pF 9.5 AC Measurement Conditions Winbond datasheet, p. 64 — 9.5 AC Measurement Conditions
02 — FAQ

W25Q128JV-IN frequently asked questions

What is the block erase time for the W25Q128JV-IN when erasing 32kb?

The block erase time is 120 ms.

What is the clock frequency for the W25Q128JV-IN when using command 03h?

The clock frequency is 133 MHz.

What is the data retention period for the W25Q128JV-IN?

The data retention is 20 year.

What is the input capacitance of the W25Q128JV-IN when VIN = 0V?

The input capacitance is 6 pF.

What is the load capacitance under 9.5 AC Measurement Conditions?

The load capacitance is 30 pF.

What is the memory size of the W25Q128JV-IN?

The memory size is 128 Mbit.

What is the operating temperature for the W25Q128JV-IN under Industrial conditions as defined in section 9.2 Operating Ranges?

The operating temperature is 85 °C.

What is the output capacitance of the W25Q128JV-IN when VOUT = 0V?

The output capacitance is 8 pF at VOUT = 0V.

What is the output voltage low specification for the W25Q128JV-IN?

The output voltage low is 200 mV when IOL = 100 µA.

What is the page program time for the W25Q128JV-IN?

The page program time is 400 µs.

What is the program erase cycle endurance for the W25Q128JV-IN?

The program erase cycle endurance is 100 kcycle.

What is the rise time under 9.5 AC Measurement Conditions?

The rise time is 5 ns under 9.5 AC Measurement Conditions.

01 — Key specifications

W25Q128JV-IQ datasheet parameters

ParameterMinTypMaxConditionsSource
supply voltage range -600 mV 4.6 V 9. ELECTRICAL CHARACTERISTICS Winbond datasheet, p. 61 — 9. ELECTRICAL CHARACTERISTICS
operating temperature -40 °C 85 °C Industrial; 9.2 Operating Ranges Winbond datasheet, p. 61 — 9.2 Operating Ranges
clock frequency 133 MHz (03h); winbond Winbond datasheet, p. 65 — winbond
standby current 10 µA 60 µA /CS = VCC, VIN = GND or VCC; winbond Winbond datasheet, p. 63 — winbond
input capacitance 6 pF VIN = 0V(1); winbond Winbond datasheet, p. 63 — winbond
output capacitance 8 pF VOUT = 0V(1); winbond Winbond datasheet, p. 63 — winbond
rise time 5 ns 9.5 AC Measurement Conditions Winbond datasheet, p. 64 — 9.5 AC Measurement Conditions
memory size 128 Mbit Winbond datasheet, p. 5
data retention 20 year Winbond datasheet, p. 5
program erase cycles 100 kcycle Winbond datasheet, p. 5
page program time 400 µs 3 ms page; winbond Winbond datasheet, p. 66 — winbond
block erase time 120 ms 1.6 s (32kb); winbond Winbond datasheet, p. 66 — winbond
sector erase time 45 ms 400 ms (4kb); winbond Winbond datasheet, p. 66 — winbond
output voltage low 200 mV IOL = 100 µA; winbond Winbond datasheet, p. 63 — winbond
load capacitance 30 pF 9.5 AC Measurement Conditions Winbond datasheet, p. 64 — 9.5 AC Measurement Conditions
02 — FAQ

W25Q128JV-IQ frequently asked questions

What is the block erase time for the W25Q128JV-IQ when erasing a 32kb block?

The block erase time is 120 ms for a 32kb block.

What is the clock frequency for the W25Q128JV-IQ when using the 03h command?

The clock frequency is 133 MHz.

What is the data retention period for the W25Q128JV-IQ?

The data retention is 20 year.

What is the input capacitance of the W25Q128JV-IQ when VIN = 0V?

The input capacitance is 6 pF.

What is the load capacitance under 9.5 AC Measurement Conditions?

The load capacitance is 30 pF under 9.5 AC Measurement Conditions.

What is the memory size of the W25Q128JV-IQ?

The memory size is 128 Mbit.

What is the operating temperature for the W25Q128JV-IQ under Industrial conditions as defined in section 9.2 Operating Ranges?

The operating temperature is 85 °C.

What is the output capacitance of the W25Q128JV-IQ when VOUT = 0V?

The output capacitance is 8 pF at VOUT = 0V.

What is the output voltage low specification for the W25Q128JV-IQ?

The output voltage low is 200 mV when IOL = 100 µA.

What is the page program time for the W25Q128JV-IQ?

The page program time is 400 µs.

What is the program erase cycle endurance for the W25Q128JV-IQ?

The program erase cycle endurance is 100 kcycle.

What is the rise time under 9.5 AC Measurement Conditions?

The rise time is 5 ns under 9.5 AC Measurement Conditions.

03 — Alternatives

Closest matches to W25Q128JV-I

W25Q256JVBIQ 2.0× higher memory size, 1.8× higher page program time, 1.7× higher supply voltage range
W25Q64JVSFIQ 2.0× lower memory size, 1.7× higher supply voltage range, similar block erase time
W25Q16JV-IQ 8.0× lower memory size, 1.7× higher supply voltage range, similar block erase time
W25Q20EW 1.3× lower clock frequency, 1.2× higher block erase time, 1.1× lower supply voltage range
W25Q32JV-IQ 3.8× lower memory size, 1.7× higher supply voltage range, similar block erase time
W25Q80DVBYIG 16.0× lower memory size, 2.0× higher page program time, 1.6× higher supply voltage range
GD25Q128EBIG 1.6× higher supply voltage range, 1.4× higher standby current, 1.2× higher block erase time
GD25Q64EBIG 2.1× higher block erase time, 2.0× lower memory size, 1.6× higher supply voltage range
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