memory

W25Q20EW

Every spec below is cited to the manufacturer datasheet. Pick your exact ordering code, compare the closest alternatives, then ask the assistant what it means for your design.

00 — Overview

What the W25Q20EW family does

The W25Q20EW is a 2-Mbit serial flash memory featuring 4-KB sectors and support for both dual and quad SPI protocols. It operates on a single 1.8-V supply with a maximum clock frequency of 100 MHz and a read latency of 15 ns. This device supports standard, dual, and quad SPI instructions to optimize data throughput for various applications. It includes comprehensive write protection mechanisms and a status register to track busy states and programming progress. The part is available in multiple package types including SOIC, VSOP, USON, and WLCSP to suit different board space requirements. It serves as a high-density storage solution for embedded systems requiring non-volatile data retention.

Next step
Start building with W25Q20EW → Every number above is cited straight from the datasheet — ask what they mean for your design, and the assistant answers from the same source documents.
01 — Key specifications

W25Q20EW datasheet parameters

ParameterMinTypMaxConditionsSource
supply voltage range 1.65 V 1.95 V FR = 104MHz, fR = 50MHz; 9.2 Operating Ranges Winbond datasheet, p. 50 — 9.2 Operating Ranges
operating temperature -40 °C 85 °C Industrial; 9.2 Operating Ranges Winbond datasheet, p. 50 — 9.2 Operating Ranges
clock frequency 50 MHz (03h); 9.6 AC Electrical Characteristics: Winbond datasheet, p. 54 — 9.6 AC Electrical Characteristics:
standby current 10 µA 25 µA /CS = VCC, VIN = GND or VCC; winbond Winbond datasheet, p. 52 — winbond
input capacitance 6 pF VIN = 0V; winbond Winbond datasheet, p. 52 — winbond
output capacitance 8 pF VOUT = 0V; winbond Winbond datasheet, p. 52 — winbond
rise time 5 ns 9.5 AC Measurement Conditions Winbond datasheet, p. 53 — 9.5 AC Measurement Conditions
memory size 2 Mbit Winbond datasheet, p. 5
data retention 20 year Winbond datasheet, p. 5
program erase cycles 100 kcycle Winbond datasheet, p. 5
page program time 2.5 µs 5 µs (after first byte); 9.7 AC Electrical Characteristics (cont'd) Winbond datasheet, p. 55 — 9.7 AC Electrical Characteristics (cont'd)
block erase time 150 ms 800 ms (32kb); 9.7 AC Electrical Characteristics (cont'd) Winbond datasheet, p. 55 — 9.7 AC Electrical Characteristics (cont'd)
sector erase time 45 ms 400 ms (4kb); 9.7 AC Electrical Characteristics (cont'd) Winbond datasheet, p. 55 — 9.7 AC Electrical Characteristics (cont'd)
output voltage low 200 mV IOL = 100 µA; winbond Winbond datasheet, p. 52 — winbond
load capacitance 30 pF 9.5 AC Measurement Conditions Winbond datasheet, p. 53 — 9.5 AC Measurement Conditions
02 — FAQ

W25Q20EW frequently asked questions

What is the block erase time for 32kb?

The block erase time is 150 ms.

What is the clock frequency for the W25Q20EW under condition (03h); 9.6 AC Electrical Characteristics?

The clock frequency is 50 MHz.

What is the data retention period for the W25Q20EW?

The data retention is 20 year.

What is the input capacitance of the W25Q20EW when VIN = 0V?

The input capacitance is 6 pF when VIN = 0V.

What is the load capacitance under 9.5 AC Measurement Conditions?

The load capacitance is 30 pF under 9.5 AC Measurement Conditions.

What is the memory size of the W25Q20EW?

The memory size is 2 Mbit.

What is the operating temperature for the W25Q20EW under Industrial conditions as specified in section 9.2 Operating Ranges?

The operating temperature is 85 °C.

What is the output capacitance of the W25Q20EW when VOUT = 0V?

The output capacitance is 8 pF.

What is the output voltage low specification for the W25Q20EW?

The output voltage low is 200 mV at IOL = 100 µA.

What is the page program time for the W25Q20EW after the first byte?

The page program time is 2.5 µs (after first byte).

What is the program erase cycle endurance for the W25Q20EW?

The program erase cycles are 100 kcycle.

What is the rise time under 9.5 AC Measurement Conditions?

The rise time is 5 ns under 9.5 AC Measurement Conditions.

03 — Alternatives

Closest matches to W25Q20EW

W25Q128JV-IN 1.3× higher clock frequency, 1.2× lower block erase time, 1.1× higher supply voltage range
W25Q16JV-IQ 8.0× higher memory size, 1.8× higher supply voltage range, 1.3× higher clock frequency
W25Q256JVBIQ 1.8× higher supply voltage range, 1.8× higher page program time, 1.3× higher clock frequency
W25Q32JV-IQ 16.8× higher memory size, 1.8× higher supply voltage range, 1.3× higher clock frequency
W25Q64JVSFIQ 1.8× higher supply voltage range, 1.3× higher clock frequency, 1.2× lower block erase time
W25Q80DVBYIG 4.0× higher memory size, 2.0× higher page program time, 1.8× higher supply voltage range
GD25Q128EBIG 1.8× higher supply voltage range, 1.4× higher standby current, 1.3× higher clock frequency
GD25Q16E 8.0× higher memory size, 1.8× higher supply voltage range, 1.7× higher block erase time
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