memory

MR25H256

Every spec below is cited to the manufacturer datasheet. Pick your exact ordering code, compare the closest alternatives, then ask the assistant what it means for your design.

00 — Overview

What the MR25H256 family does

The MR25H256 and MR25H256A are 256Kb serial SPI MRAM devices offering unlimited write endurance and data retention exceeding 20 years. These parts operate on a 2.7 to 3.6 Volt supply, support clock rates up to 40 MHz, and feature automatic data protection on power loss. Available in Industrial and Automotive Grade 1 and Grade 3 temperature ranges, they come in 8-DFN or 8-DFN Small Flag packages. Designers typically use them as direct replacements for serial EEPROM, Flash, or FeRAM. The MR25H256A is recommended for new designs, while the MR25H256 remains in production but is subject to phase out.

Next step
Start building with MR25H256 → Every number above is cited straight from the datasheet — ask what they mean for your design, and the assistant answers from the same source documents.
Ordering code:
01 — Key specifications

MR25H256 datasheet parameters

ParameterMinTypMaxConditionsSource
output current (abs max) -20 mA 20 mA All; iout; – Absolute Maximum Ratings Everspin datasheet, p. 13 — Table 6 – Absolute Maximum Ratings
supply voltage range 2.7 V 3.6 V vdd Everspin datasheet, p. 14 — Table 7 – Operating Conditions
operating temperature -40 °C 85 °C ta Everspin datasheet, p. 14 — Table 7 – Operating Conditions
clock frequency 40 MHz Everspin datasheet, p. 17 — Table 13 – AC Timing Parameters
power dissipation (abs max) 600 mW All; pd; – Absolute Maximum Ratings Everspin datasheet, p. 13 — Table 6 – Absolute Maximum Ratings
standby current (abs max) 90 µA 90 µA 115 µA CS High1; isb; – Power Supply Characteristics Everspin datasheet, p. 14 — Table 9 – Power Supply Characteristics
input capacitance 6 pF cin; – Capacitance Everspin datasheet, p. 15 — Table 10 – Capacitance
output capacitance 8 pF ci; – Capacitance Everspin datasheet, p. 15 — Table 10 – Capacitance
fall time 2 ns – AC Measurement Conditions Everspin datasheet, p. 15 — Table 11 – AC Measurement Conditions
memory size 262 kbit Everspin datasheet, p. 20 — Table 14 – Ordering Part Number Decoder Table
data retention 20 year Everspin datasheet, p. 1
output voltage high 2.4 V IOH = -4 mA; voh; – DC Characteristics Everspin datasheet, p. 14 — Table 8 – DC Characteristics
output voltage low 400 mV IOL = +4 mA; vol; – DC Characteristics Everspin datasheet, p. 14 — Table 8 – DC Characteristics
01 — Key specifications

MR25H256A datasheet parameters

ParameterMinTypMaxConditionsSource
output current (abs max) -20 mA 20 mA All; iout; – Absolute Maximum Ratings Everspin datasheet, p. 13 — Table 6 – Absolute Maximum Ratings
supply voltage range 2.7 V 3.6 V vdd Everspin datasheet, p. 14 — Table 7 – Operating Conditions
operating temperature -40 °C 85 °C ta Everspin datasheet, p. 14 — Table 7 – Operating Conditions
clock frequency 40 MHz Everspin datasheet, p. 17 — Table 13 – AC Timing Parameters
power dissipation (abs max) 600 mW All; pd; – Absolute Maximum Ratings Everspin datasheet, p. 13 — Table 6 – Absolute Maximum Ratings
standby current (abs max) 90 µA 90 µA 115 µA CS High1; isb; – Power Supply Characteristics Everspin datasheet, p. 14 — Table 9 – Power Supply Characteristics
input capacitance 6 pF cin; – Capacitance Everspin datasheet, p. 15 — Table 10 – Capacitance
output capacitance 8 pF ci; – Capacitance Everspin datasheet, p. 15 — Table 10 – Capacitance
fall time 2 ns – AC Measurement Conditions Everspin datasheet, p. 15 — Table 11 – AC Measurement Conditions
memory size 262 kbit Everspin datasheet, p. 20 — Table 14 – Ordering Part Number Decoder Table
data retention 20 year Everspin datasheet, p. 1
output voltage high 2.4 V IOH = -4 mA; voh; – DC Characteristics Everspin datasheet, p. 14 — Table 8 – DC Characteristics
output voltage low 400 mV IOL = +4 mA; vol; – DC Characteristics Everspin datasheet, p. 14 — Table 8 – DC Characteristics
03 — Alternatives

Closest matches to MR25H256

GD25WD05CEIG 2.5× higher clock frequency, 2.5× higher fall time, 2.0× higher memory size
AT7456E 5.0× higher data retention, 2.5× lower output voltage low, 2.0× higher output voltage high
GD25Q128EBIG 6.4× lower standby current, 3.3× higher clock frequency, 2.5× higher fall time
GD25Q16E 8.2× lower standby current, 3.3× higher clock frequency, 2.5× higher fall time
GD25Q16EEEG 8.2× lower standby current, 3.3× higher clock frequency, 2.5× higher fall time
GD25Q32EBIG 7.5× lower standby current, 3.3× higher clock frequency, 2.5× higher fall time
GD25Q64EBIG 7.5× lower standby current, 3.3× higher clock frequency, 2.5× higher fall time
PY25Q64HA-QVH-IR 6.0× lower standby current, 3.3× higher clock frequency, 2.0× lower output voltage low
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