Build with GD25WD05 — Datasheet Specs & AI Design Help

00 — Overview

What the GD25WD05 does

The GD25WD10C/05C family are standard and dual serial flash memory devices available in 10 and 5 megabit capacities. These parts operate on a single supply of 2.7 to 3.6 volts and feature a maximum clock frequency of 50 MHz. The devices support both single and dual output modes for flexible interface requirements. Engineers typically use these components in embedded systems requiring non-volatile storage for code or data. The family includes multiple package options such as SOP8 with varying lead lengths to suit different board designs. These memories provide reliable data retention and support standard industry commands for programming and erasing sectors.

Next step

Start building with GD25WD05 → Every number above is cited straight from the datasheet — ask what they mean for your design, and the assistant answers from the same source documents.

01 — Key specifications

Datasheet parameters

Datasheet parameters for GD25WD05
Parameter	Min	Typ	Max	Conditions	Source
supply voltage range	1.65 V	—	3.6 V		GigaDevice datasheet, p. 4
operating temperature (abs max)	-40 °C	—	85 °C	8.3. ABSOLUTE MAXIMUM RATINGS	GigaDevice datasheet, p. 24 — 8.3. ABSOLUTE MAXIMUM RATINGS
clock frequency	—	—	100 MHz	fc1(0bh); 8.6. AC CHARACTERISTICS	GigaDevice datasheet, p. 29 — 8.6. AC CHARACTERISTICS
standby current	—	100 nA	15 µA	CS# = VCC, VIN = VCC or VSS; icc1	GigaDevice datasheet, p. 28
input capacitance	—	—	6 pF	VIN = 0V; cin; 8.4. CAPACITANCE MEASUREMENT CONDITIONS	GigaDevice datasheet, p. 25 — 8.4. CAPACITANCE MEASUREMENT CONDITIONS
output capacitance	—	—	8 pF	VOUT = 0V; cout; 8.4. CAPACITANCE MEASUREMENT CONDITIONS	GigaDevice datasheet, p. 25 — 8.4. CAPACITANCE MEASUREMENT CONDITIONS
slew rate	100 V/µs	—	—	tchcl(slew rate); 8.6. AC CHARACTERISTICS	GigaDevice datasheet, p. 29 — 8.6. AC CHARACTERISTICS
fall time	—	—	5 ns	8.4. CAPACITANCE MEASUREMENT CONDITIONS	GigaDevice datasheet, p. 25 — 8.4. CAPACITANCE MEASUREMENT CONDITIONS
memory size	—	512 kbit	—		GigaDevice datasheet, p. 36 — 9.1. Valid Part Numbers
data retention	—	20 year	—		GigaDevice datasheet, p. 4
program erase cycles	—	100 kcycle	—		GigaDevice datasheet, p. 4
page program time	—	40 µs	110 µs	tbp1(first byte); GigaDevice	GigaDevice datasheet, p. 31 — GigaDevice
block erase time	—	500 ms	2.5 s	tbe1(32k bytes)	GigaDevice datasheet, p. 33
sector erase time	—	150 ms	500 ms	tse; 8.6. AC CHARACTERISTICS	GigaDevice datasheet, p. 29 — 8.6. AC CHARACTERISTICS
output voltage low	—	—	400 mV	IOL = 100µA; vol; 8.5. DC CHARACTERISTICS	GigaDevice datasheet, p. 26 — 8.5. DC CHARACTERISTICS
load capacitance	30 pF	—	—	cl; 8.4. CAPACITANCE MEASUREMENT CONDITIONS	GigaDevice datasheet, p. 25 — 8.4. CAPACITANCE MEASUREMENT CONDITIONS

02 — Alternatives

Closest matches to GD25WD05

GD25Q16E 4.0× lower page program time, 3.3× lower sector erase time, 2.0× lower block erase time

GD25Q16EEEG 4.0× lower page program time, 3.3× lower sector erase time, 2.0× lower block erase time

GD25Q32EBIG 3.3× lower sector erase time, 3.2× lower page program time, 2.0× lower block erase time

GD25Q64EBIG 3.3× lower sector erase time, 3.2× lower page program time, 2.0× lower block erase time

GD25Q128EBIG 3.3× lower block erase time, 3.3× lower sector erase time, 3.2× lower page program time

W25Q80DVBYIG 15.6× higher memory size, 4.2× lower block erase time, 3.3× lower sector erase time

W25Q128JV-IN 4.2× lower block erase time, 4.0× lower page program time, 3.3× lower sector erase time

W25Q16JV-IQ 4.2× lower block erase time, 4.0× lower page program time, 3.3× lower sector erase time

03 — FAQ

Frequently asked questions

What is the block erase time for 32k bytes?

The block erase time (tbe1) for 32k bytes is 500 ms.

What is the clock frequency under condition fc1(0bh) in section 8.6 AC CHARACTERISTICS?

The clock frequency is 100 MHz.

What is the data retention period for the GD25WD05CEIG?

The data retention is 20 year.

What is the fall time under 8.4. CAPACITANCE MEASUREMENT CONDITIONS?

The fall time is 5 ns.

What is the input capacitance when VIN = 0V?

The input capacitance is 6 pF.

What is the load capacitance under condition cl; 8.4?

The load capacitance is 30 pF.

What is the memory size of the GD25WD05CEIG?

The memory size is 512 kbit.

What is the maximum operating temperature specified in section 8.3 ABSOLUTE MAXIMUM RATINGS?

The operating temperature is 85 °C.

What is the output capacitance?

The output capacitance is 8 pF at VOUT = 0V; cout; 8.4.

What is the output voltage low (VOL) when IOL = 100µA?

The output voltage low is 400 mV.

What is the page program time (tbp1) for the first byte?

The page program time (tbp1) for the first byte is 40 µs.

What is the program erase cycle endurance for the GD25WD05CEIG?

The program erase cycle endurance is 100 kcycle.