GD25Q16
Full part number: GD25Q16EEEG
Every spec below is cited to the manufacturer datasheet. Compare the closest alternatives, then ask the assistant what it means for your design.
What the GD25Q16 does
The GD25Q16Ex family comprises dual and quad serial flash memory devices available in multiple package types. These parts offer 16 Mbit capacity with 1.7 V to 3.6 V single supply operation and 55 MHz maximum clock frequency. The architecture supports 64 KB page programming and 32 KB or 64 KB block erase functions. Engineers typically use these components for code storage in microcontroller applications, configuration data retention, and non-volatile parameter storage in industrial and consumer electronics requiring high-speed serial communication.
Datasheet parameters
| Parameter | Min | Typ | Max | Conditions | Source |
|---|---|---|---|---|---|
| supply voltage range | 2.7 V | — | 3.6 V | GigaDevice datasheet, p. 42 | |
| operating temperature (abs max) | -40 °C | — | 85 °C | 8.3 Absolute Maximum Ratings | GigaDevice datasheet, p. 36 — 8.3 Absolute Maximum Ratings |
| clock frequency | — | — | 133 MHz | fc1(03h); 8.6 AC Characteristics | GigaDevice datasheet, p. 41 — 8.6 AC Characteristics |
| standby current | — | 11 µA | 80 µA | CS# = VCC, VIN = VCC or VSS; icc1 | GigaDevice datasheet, p. 40 |
| input capacitance | — | — | 6 pF | VIN = 0V; cin; 8.4 Capacitance Measurement Conditions | GigaDevice datasheet, p. 37 — 8.4 Capacitance Measurement Conditions |
| output capacitance | — | — | 8 pF | VOUT = 0V; cout; 8.4 Capacitance Measurement Conditions | GigaDevice datasheet, p. 37 — 8.4 Capacitance Measurement Conditions |
| slew rate | 200 V/µs | — | — | tchcl(slew rate); 8.6 AC Characteristics | GigaDevice datasheet, p. 41 — 8.6 AC Characteristics |
| fall time | — | — | 5 ns | 8.4 Capacitance Measurement Conditions | GigaDevice datasheet, p. 37 — 8.4 Capacitance Measurement Conditions |
| memory size | — | 16 Mbit | — | GigaDevice datasheet, p. 4 | |
| data retention | — | 20 year | — | GigaDevice datasheet, p. 4 | |
| program erase cycles | — | 100 kcycle | — | GigaDevice datasheet, p. 4 | |
| page program time | — | 400 µs | — | GigaDevice datasheet, p. 42 — GigaDevice Dual and Quad Serial Flash | |
| block erase time | — | 250 ms | — | GigaDevice datasheet, p. 42 — GigaDevice Dual and Quad Serial Flash | |
| sector erase time | — | 45 ms | — | GigaDevice datasheet, p. 42 — GigaDevice Dual and Quad Serial Flash | |
| output voltage low | — | — | 200 mV | IOL = 100µA; vol; 8.5 DC Characteristics | GigaDevice datasheet, p. 38 — 8.5 DC Characteristics |
| load capacitance | 30 pF | — | — | cl; 8.4 Capacitance Measurement Conditions | GigaDevice datasheet, p. 37 — 8.4 Capacitance Measurement Conditions |
Closest matches to GD25Q16
Frequently asked questions
What is the block erase time for the GD25Q16EEEG?
The block erase time is 250 ms.
What is the clock frequency for the GD25Q16EEEG under condition fc1(03h) as specified in section 8.6 AC Characteristics?
The clock frequency is 133 MHz.
What is the data retention period for the GD25Q16EEEG?
The data retention period is 20 year.
What is the fall time under 8.4 Capacitance Measurement Conditions?
The fall time is 5 ns.
What is the input capacitance (cin) when VIN = 0V?
The input capacitance is 6 pF.
What is the load capacitance under cl conditions as defined in section 8.4 Capacitance Measurement Conditions?
The load capacitance is 30 pF.
What is the memory size of the GD25Q16EEEG?
The memory size is 16 Mbit.
What is the operating temperature specified in section 8.3 Absolute Maximum Ratings?
The operating temperature is 85 °C.
What is the output capacitance of the GD25Q16EEEG when VOUT = 0V?
The output capacitance is 8 pF when VOUT = 0V.
What is the maximum output voltage low (VOL) when IOL is 100µA?
The output voltage low is 200 mV when IOL = 100µA.
What is the page program time for the GD25Q16EEEG?
The page program time is 400 µs.
What is the program erase cycle endurance for the GD25Q16EEEG?
The program erase cycle endurance is 100 kcycle.